6 nti-8 nti LN-on-Si Composite Substrate Thickness 0.3-50 μm Si / SiC / Sapphire ntawm Cov Khoom

6 nti-8 nti LN-on-Si Composite Substrate Thickness 0.3-50 μm Si/SiC/Sapphire ntawm cov ntaub ntawv Featured duab

Lus piav qhia luv luv:

Lub 6-nti mus rau 8-nti LN-on-Si composite substrate yog cov khoom siv ua haujlwm siab uas ua ke ib leeg-crystal lithium niobate (LN) nyias zaj duab xis nrog silicon (Si) substrates, nrog tuab ntawm 0.3 μm txog 50 μm. Nws yog tsim rau advanced semiconductor thiab optoelectronic ntaus ntawv fabrication. Siv cov txheej txheem kev sib raug zoo lossis kev loj hlob ntawm epitaxial, lub substrate no ua kom cov crystalline zoo ntawm LN nyias zaj duab xis thaum siv cov wafer loj loj (6-nti mus rau 8-nti) ntawm silicon substrate los txhim kho kev tsim khoom thiab kev siv nyiaj.
Piv nrog rau cov khoom siv LN cov khoom siv sib xyaw ua ke, 6-nti rau 8-nti LN-on-Si cov khoom sib xyaw ua ke muaj kev sib xyaw ua ke zoo tshaj plaws thiab cov khoom siv kho tshuab, ua rau nws tsim nyog rau kev ua haujlwm loj wafer-theem. Tsis tas li ntawd, lwm cov ntaub ntawv hauv paus xws li SiC lossis sapphire tuaj yeem raug xaiv kom tau raws li cov kev cai tshwj xeeb, suav nrog cov khoom siv RF zaus, kev sib xyaw ua ke, thiab MEMS sensors.

Xa email rau peb

Product Detail

Khoom cim npe

Technical parameters

0.3-50μm LN / LT ntawm Insulators
Sab saum toj txheej
Txoj kab uas hla	6-8 nti
Kev taw qhia	X, Z, Y-42 thiab lwm yam.
Khoom siv	LT, LN
Thickness	0.3-50 hli
Substrate (Customized)
Khoom siv	Si, SiC, Sapphire, Spinel, Quartz

Ntsiab nta

Lub 6-nti mus rau 8-nti LN-on-Si composite substrate yog txawv los ntawm nws cov khoom tshwj xeeb thiab tunable tsis, ua kom dav siv nyob rau hauv semiconductor thiab optoelectronic industries:

1.Large Wafer Compatibility: Lub 6-nti mus rau 8-nti wafer loj ua kom muaj kev sib koom ua ke nrog cov kab uas twb muaj lawm semiconductor fabrication (xws li, CMOS txheej txheem), txo cov nqi tsim khoom thiab ua kom cov khoom loj.

2.High Crystalline Zoo: Optimized epitaxial los yog kev sib txuas cov tswv yim kom tsis muaj qhov tsis xws luag hauv LN nyias zaj duab xis, ua rau nws zoo tagnrho rau kev ua haujlwm siab kho qhov muag, qhov chaw acoustic yoj (SAW) lim, thiab lwm yam khoom siv precision.

3.Adjustable Thickness (0.3–50 μm): Ultrathin LN khaubncaws sab nraud povtseg (<1 μm) yog haum rau integrated photonic chips, thaum thicker txheej (10-50 μm) txhawb high-power RF li los yog piezoelectric sensors.

4.Multiple Substrate Options: Ntxiv rau Si, SiC (siab thermal conductivity) los yog sapphire (siab rwb thaiv tsev) tuaj yeem xaiv los ua cov ntaub ntawv hauv qab kom tau raws li qhov xav tau ntawm high-frequency, high-temperature, lossis high-power applications.

5.Thermal thiab Mechanical Stability: Lub silicon substrate muab kev txhawb zog txhua yam, txo qis warping lossis tawg thaum ua thiab txhim kho cov khoom tawm los.

Cov cwj pwm no tso lub 6-nti rau 8-nti LN-on-Si cov khoom sib xyaw ua ke raws li cov khoom siv rau kev siv thev naus laus zis xws li 5G kev sib txuas lus, LiDAR, thiab quantum optics.

Cov ntawv thov tseem ceeb

Lub 6-nti mus rau 8-nti LN-on-Si composite substrate yog dav siv nyob rau hauv high-tech industries vim nws tshwj xeeb electro-optic, piezoelectric, thiab acoustic zog:

1.Optical Communications thiab Integrated Photonics: Enables high-speed electro-optic modulators, waveguides, and photonic integrated circuits (PICs), hais txog bandwidth xav tau ntawm cov chaw zov me nyuam thiab fiber-optic networks.

2.5G/6G RF Devices: Lub siab piezoelectric coefficient ntawm LN ua rau nws zoo tagnrho rau nto acoustic yoj (SAW) thiab bulk acoustic yoj (BAW) lim, txhim kho cov teeb liab ua hauv 5G hauv paus chaw nres tsheb thiab cov khoom siv txawb.

3.MEMS thiab Sensors: Cov nyhuv piezoelectric ntawm LN-on-Si ua kom yooj yim rhiab heev accelerometers, biosensors, thiab ultrasonic transducers rau kev kho mob thiab kev siv.

4.Quantum Technologies: Raws li cov khoom siv kho qhov muag uas tsis yog-linear, LN nyias zaj duab xis yog siv nyob rau hauv quantum light sources (xws li, entangled photon khub) thiab quantum chips integrated.

5.Lasers thiab Nonlinear Optics: Ultrathin LN cov khaubncaws sab nraud povtseg ua kom muaj txiaj ntsig thib ob-harmonic tiam (SHG) thiab kho qhov muag parametric oscillation (OPO) pab kiag li lawm rau laser ua thiab spectroscopic tsom xam.

Tus qauv 6-nti mus rau 8-nti LN-on-Si composite substrate tso cai rau cov khoom siv no tsim nyob rau hauv loj-scale wafer fabs, txo nqi ntau lawm.

Customization thiab Kev Pabcuam

Peb muab kev pabcuam kev pabcuam thiab kev pabcuam khomob rau 6-nti rau 8-nti LN-on-Si composite substrate kom tau raws li ntau yam R & D thiab ntau lawm xav tau:

1.Custom Fabrication: LN zaj duab xis thickness (0.3-50 μm), siv lead ua orientation (X-txiav / Y-txiav), thiab cov khoom siv substrate (Si / SiC / sapphire) tuaj yeem tsim kho kom zoo dua cov cuab yeej ua haujlwm.

2.Wafer-Level Processing: Cov khoom siv ntau ntawm 6-nti thiab 8-nti wafers, suav nrog cov kev pabcuam rov qab xws li dicing, polishing, thiab txheej, kom ntseeg tau tias cov substrates yog npaj rau kev sib xyaw ua ke.

3.Technical Consultation and Testing: Material characterization (eg, XRD, AFM), electro-optic performance testing, and device simulation support to expedite design validation.

Peb lub hom phiaj yog tsim kom muaj 6-nti mus rau 8-nti LN-on-Si composite substrate ua cov khoom siv tseem ceeb rau kev siv optoelectronic thiab semiconductor, muab kev txhawb nqa kawg-rau-kawg los ntawm R & D rau ntau lawm.

Xaus

Lub 6-nti mus rau 8-nti LN-on-Si composite substrate, nrog nws loj wafer loj, superior khoom zoo, thiab versatility, yog tsav mus nce qib hauv optical kev sib txuas lus, 5G RF, thiab quantum technologies. Txawm hais tias rau cov khoom ntim siab lossis cov kev daws teeb meem customized, peb xa cov khoom siv txhim khu kev qha thiab cov kev pabcuam ntxiv los txhawb kev tsim kho thev naus laus zis.