6 Nti Conductive SiC Composite Substrate 4H Diameter 150mm Ra≤0.2nm Warp≤35μm

Lus piav qhia luv luv:

Tsav los ntawm kev lag luam semiconductor nrhiav kev ua haujlwm siab dua thiab tus nqi qis, 6-nti conductive SiC composite substrate tau tshwm sim. Los ntawm cov khoom siv thev naus laus zis thev naus laus zis, 6-nti wafer ua tiav 85% ntawm kev ua haujlwm ntawm 8-nti wafers ib txwm siv thaum raug nqi tsuas yog 60% ntau npaum li cas. Cov khoom siv hluav taws xob hauv cov ntawv thov niaj hnub zoo li lub zog tshiab lub tsheb them cov chaw nres tsheb, 5G lub hauv paus chaw nres tsheb fais fab modules, thiab txawm tias cov tsav tsheb sib txawv hauv cov khoom siv hauv tsev zoo dua tuaj yeem siv cov substrates ntawm hom no. Peb patented multi-layer epitaxial txoj kev loj hlob technology enables atomic-level ca composite interfaces ntawm SiC bases, nrog interface lub xeev ceev hauv qab no 1 × 10¹¹ / cm²·eV - ib tug specification uas tau mus txog thoob ntiaj teb ua theem.

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Product Detail

Khoom cim npe

Technical parameters

Cov khoom	Ntau lawmqib	Dummyqib
Txoj kab uas hla	6-8 nti	6-8 nti
Thickness	350/500 ± 25.0 hli	350/500 ± 25.0 hli
Polytype	4H	4H
Kev tiv thaiv	0.015-0.025 hli	0.015-0.025 hli
TTV	≤ 5 hli	≤ 20 hli
Warp	≤ 35 hli	≤ 55 hli
Pem hauv ntej (Si-face) roughness	Ra≤0.2nm (5μm × 5μm)	Ra≤0.2nm (5μm × 5μm)

Ntsiab nta

1.Cost Advantage: Peb 6-inch conductive SiC composite substrate ntiav cov khoom siv "qib tsis zoo" thev naus laus zis uas txhim kho cov khoom muaj pes tsawg leeg kom txo cov nqi raw khoom los ntawm 38% thaum tswj kev ua tau zoo ntawm hluav taws xob. Kev ntsuas qhov tseeb qhia tau hais tias 650V MOSFET cov cuab yeej siv cov khoom siv no ua tiav 42% txo tus nqi hauv ib cheeb tsam piv rau cov kev daws teeb meem, uas yog qhov tseem ceeb rau kev txhawb nqa SiC cov khoom siv hauv cov khoom siv hluav taws xob.
2.Excellent Conductive Properties: Los ntawm cov txheej txheem nitrogen doping tswj cov txheej txheem, peb 6-nti conductive SiC composite substrate ua tiav ultra-low resistivity ntawm 0.012-0.022Ω·cm, nrog variation tswj nyob rau hauv ± 5%. Qhov tseem ceeb, peb tuav cov kev tiv thaiv ib puag ncig txawm tias nyob hauv thaj tsam 5 hli ntug ntawm wafer, daws qhov teeb meem ntev ntev ntawm ntug hauv kev lag luam.
3.Thermal Performance: A 1200V / 50A module tsim los siv peb cov substrate qhia tsuas yog 45 ℃ hlws ris kub nce siab tshaj ambient ntawm tag nrho cov load ua hauj lwm - 65 ℃ qis dua piv cov khoom siv silicon. Qhov no tau qhib los ntawm peb "3D thermal channel" cov qauv sib xyaw uas txhim kho cov thermal conductivity rau 380W / m·K thiab ntsug thermal conductivity rau 290W / m·K.
4.Process Compatibility: Rau cov qauv tshwj xeeb ntawm 6-inch conductive SiC composite substrates, peb tsim ib qho kev sib txuam stealth laser dicing txheej txheem ua tiav 200mm / s txiav ceev thaum tswj ntug chipping hauv qab 0.3μm. Tsis tas li ntawd, peb muab cov kev xaiv ua ntej npib tsib xee-plated substrate uas ua kom muaj kev sib txuas ncaj nraim, txuag cov neeg siv khoom ob txheej txheem.

Cov ntawv thov tseem ceeb

Critical Smart Grid Equipment:

Nyob rau hauv ultra-high voltage direct tam sim no (UHVDC) kis systems khiav hauj lwm ntawm ± 800kV, IGCT pab kiag li lawm siv peb 6-nti conductive SiC composite substrates ua tau zoo kawg li kev ua tau zoo. Cov cuab yeej no ua tiav 55% txo qis hauv kev hloov pauv thaum lub sijhawm sib hloov txheej txheem, thaum ua kom tag nrho cov kev ua haujlwm tau zoo tshaj 99.2%. Lub substrates 's superior thermal conductivity (380W / m·K) ua kom cov qauv hloov pauv hloov pauv uas txo cov chaw nres tsheb hneev taw los ntawm 25% piv rau cov pa roj silicon-raws li kev daws teeb meem.

New Energy Tsheb Powertrains:

Lub kaw lus tsav nrog peb 6-nti conductive SiC composite substrates ua tiav qhov tsis tau pom dua inverter zog ceev ntawm 45kW / L - 60% kev txhim kho dua lawv cov qauv 400V silicon yav dhau los. Qhov zoo tshaj plaws, lub kaw lus tswj hwm 98% kev ua tau zoo thoob plaws tag nrho cov kev khiav hauj lwm kub ntawm -40 ℃ to +175 ℃, daws cov kev sib tw huab cua txias uas tau ua rau EV kev saws me nyuam nyob rau sab qaum teb huab cua. Kev ntsuas tiag tiag hauv ntiaj teb qhia tau hais tias 7.5% nce rau lub caij ntuj no rau cov tsheb uas muaj cov cuab yeej siv no.

Industrial Variable Frequency Drives:

Kev txais yuav ntawm peb cov substrates nyob rau hauv ntse fais fab modules (IPMs) rau industrial servo systems yog transforming manufacturing automation. Nyob rau hauv CNC machining chaw, cov modules xa 40% ceev lub cev muaj zog teb (txo lub sij hawm acceleration ntawm 50ms mus rau 30ms) thaum txiav electromagnetic suab nrov los ntawm 15dB mus rau 65dB(A).

Consumer Electronics:

Cov neeg siv khoom siv hluav taws xob hloov pauv txuas ntxiv nrog peb cov substrates ua rau tiam tom ntej 65W GaN ceev chargers. Cov khoom siv fais fab loj no ua tiav 30% ntim txo (qis mus rau 45cm³) thaum tuav lub zog tag nrho, ua tsaug rau qhov zoo tshaj qhov hloov pauv ntawm SiC-based designs. Thermal imaging qhia qhov siab tshaj plaws ntawm qhov kub ntawm tsuas yog 68 ° C thaum lub sijhawm ua haujlwm tas mus li - 22 ° C txias dua li cov qauv tsim qauv - txhim kho cov khoom lag luam thiab kev nyab xeeb.

XKH Customization Services

XKH muab kev txhawb nqa kev kho kom haum rau 6-nti conductive SiC sib xyaw substrates:

Thickness Customization: Cov kev xaiv suav nrog 200μm, 300μm, thiab 350μm specifications
2. Resistivity Control: Adjustable n-hom doping concentration ntawm 1 × 10¹⁸ txog 5 × 10¹⁸ cm⁻³

3. Crystal Orientation: Kev them nyiaj yug rau ntau yam kev taw qhia suav nrog (0001) off-axis 4 ° lossis 8 °

4. Kev Pabcuam Kev Xeem: Ua kom tiav cov ntaub ntawv ntsuas ntsuas ntsuas wafer

Peb lub sijhawm ua haujlwm tam sim no los ntawm kev tsim qauv rau kev tsim khoom loj tuaj yeem luv li 8 lub lis piam. Rau cov neeg siv khoom siv tswv yim, peb muab cov kev pabcuam txhim kho cov txheej txheem los xyuas kom meej qhov zoo sib xws nrog cov khoom siv.