150mm 6 nti 0.7mm 0.5mm Sapphire Wafer Substrate Carrier C-Plane SSP / DSP

Lus piav qhia luv luv:

Tag nrho cov saum toj no yog cov lus piav qhia ntawm sapphire siv lead ua. Kev ua tau zoo heev ntawm sapphire siv lead ua ua rau nws siv dav hauv kev ua haujlwm siab kawg. Nrog txoj kev loj hlob sai ntawm LED kev lag luam, qhov kev thov rau sapphire siv lead ua cov ntaub ntawv tseem nce ntxiv.

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Product Detail

Khoom cim npe

Daim ntawv thov

Daim ntawv thov rau 6-nti sapphire wafers suav nrog:

1. LED manufacturing: sapphire wafer yuav siv tau raws li substrate ntawm LED chips, thiab nws hardness thiab thermal conductivity yuav txhim khu kev ruaj ntseg thiab kev pab cuam lub neej ntawm LED chips.

2. Laser manufacturing: Sapphire wafer kuj tseem siv tau los ua lub substrate ntawm laser, los pab txhim kho kev ua haujlwm ntawm laser thiab ua kom lub neej ntev kev pab cuam.

3. Kev tsim khoom semiconductor: Sapphire wafers tau siv dav hauv kev tsim cov khoom siv hluav taws xob thiab optoelectronic, suav nrog cov khoom siv kho qhov muag, lub hnub ci hlwb, cov khoom siv hluav taws xob ntau zaus, thiab lwm yam.

4. Lwm yam kev siv: Sapphire wafer kuj tseem siv tau los tsim cov khoom siv kov, cov khoom siv kho qhov muag, nyias zaj duab xis hnub ci hlwb thiab lwm yam khoom siv high-tech.

Specification

Khoom siv	High purity ib leeg siv lead ua Al2O3, sapphire wafer.
Dimension	150mm +/- 0.05mm, 6 nti
Thickness	1300 +/- 25 hli
Kev taw qhia	C dav hlau (0001) tawm M (1-100) dav hlau 0.2 +/- 0.05 degree
Thawj qhov chaw tiaj tiaj	Lub dav hlau +/- 1 degree
Thawj lub tiaj tiaj ntev	47.5mm +/- 1mm
Tag nrho Thickness Variation (TTV)	<20 awm
Hneev	<25 awm
Warp	<25 awm
Thermal Expansion Coefficient	6.66 x 10-6 / ° C sib npaug rau C axis, 5 x 10-6 / ° C perpendicular rau C axis
Dielectric zog	4.8 x 105 V/cm
Dielectric tsis tu ncua	11.5 (1 MHz) raws C axis, 9.3 (1 MHz) perpendicular rau C axis
Dielectric poob Tangent (aka dissipation factor)	tsawg dua 1 x 10-4
Thermal conductivity	40 W / (mK) ntawm 20 ℃
Polishing	Ib sab polished (SSP) lossis ob sab polished (DSP) Ra <0.5 nm (los ntawm AFM). Sab nraub qaum ntawm SSP wafer tau zoo hauv av rau Ra = 0.8 - 1.2 um.
Kev xa tawm	88% +/- 1% @ 460 nm