8inch 200mm Silicon Carbide SiC Wafers 4H-N hom Ntau lawm qib 500um thickness

Lus piav qhia luv luv:

Shanghai Xinkhui Tech. Co., Ltd muaj cov kev xaiv zoo tshaj plaws thiab cov nqi rau cov khoom zoo silicon carbide wafers thiab substrates mus txog 8inch diameters nrog N- thiab semi-insulating hom. Cov tuam txhab lag luam me thiab loj semiconductor thiab cov chaw tshawb fawb thoob ntiaj teb siv thiab tso siab rau peb cov silicone carbide wafers.

Xa email rau peb

Product Detail

Khoom cim npe

200mm 8inch SiC Substrate Specification

Loj: 8 nti;

Txoj kab uas hla: 200mm ± 0.2;

Thickness: 500um ± 25;

Deg Orientation: 4 mus rau [11-20] ± 0.5 °;

Kev taw qhia kev taw qhia: [1-100] ± 1 °;

Qhov tob: 1 ± 0.25mm;

Micropipe: <1cm2;

Hex Phaj: Tsis Muaj Tso Cai;

Resistivity: 0.015 ~ 0.028Ω;

EPD: <8000cm2;

TED: <6000cm2

PEB: <2000cm2

TSD: <1000cm2

SF: thaj tsam <1%

TTV ≤15um;

Warp ≤40um;

Bow ≤25um;

Poly thaj chaw: ≤5%;

Scratch: <5 thiab Ntev Ntev <1 Wafer Diameter;

Chips / Indents: Tsis muaj ntawv tso cai D> 0.5mm Dav thiab qhov tob;

Kev tawg: Tsis muaj;

Stain: Tsis muaj

Wafer ntug: Chamfer;

Nto tiav: Ob Sab Polish, Si ntsej muag CMP;

Ntim: Multi-wafer Cassette lossis Ib Lub Thawv Wafer;

Cov teeb meem tam sim no hauv kev npaj ntawm 200mm 4H-SiC crystals mainl

1) Kev npaj cov khoom zoo 200mm 4H-SiC noob muaju;

2) Qhov loj qhov kub thiab txias teb tsis sib xws thiab cov txheej txheem nucleation tswj;

3) Kev thauj mus los thiab kev hloov pauv ntawm cov khoom siv roj av hauv kev loj hlob siv lead ua loj;

4) Crystal cracking thiab defect proliferation tshwm sim los ntawm loj loj thermal kev nyuaj siab nce.

Txhawm rau kov yeej cov teeb meem no thiab tau txais txiaj ntsig zoo 200mm SiC waferssolutions tau thov:

Nyob rau hauv cov nqe lus ntawm 200mm noob siv lead ua npaj, qhov tsim nyog qhov kub thiab txias fieldflow, thiab expanding los ua ke tau kawm thiab tsim los coj mus rau hauv tus account siv lead ua zoo thiab expanding loj; Pib nrog 150mm SiC se:d siv lead ua, nqa cov noob siv lead ua iteration kom maj mam nthuav SiC crystalsize kom txog thaum nws ncav cuag 200mm; Los ntawm ntau yam siv lead ua kev loj hlob thiab processiig, maj mam txhim kho cov siv lead ua zoo hauv thaj chaw siv lead ua nthuav dav, thiab txhim kho qhov zoo ntawm 200mm noob muaju.

Nyob rau hauv cov nqe lus ntawm 200mm conductive siv lead ua thiab substrate npaj, kev tshawb fawb tau optimized lub kub feld thiab ntws teb tsim rau loj loj crystalgrowth, ua 200mm conductive SiC siv lead ua kev loj hlob, thiab tswj doping uniformity. Tom qab kev ua haujlwm ntxhib thiab ua kom zoo ntawm cov siv lead ua, tau txais 8-inchelectricaly conductive 4H-SiC ingot nrog tus qauv kab. Tom qab txiav, sib tsoo, polishing, ua kom tau SiC 200mm wafers nrog lub thickness ntawm 525um los yog li ntawd