Customized GaN-on-SiC Epitaxial Wafers (100mm, 150mm) - Ntau SiC Substrate Options (4H-N, HPSI, 4H / 6H-P)

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Peb Customized GaN-on-SiC Epitaxial Wafers muab kev ua tau zoo tshaj plaws rau kev siv hluav taws xob siab, kev siv ntau zaus los ntawm kev sib txuas cov khoom tshwj xeeb ntawm Gallium Nitride (GaN) nrog cov thermal conductivity thiab txhua yam muaj zog.Silicon Carbide (SiC). Muaj nyob rau hauv 100mm thiab 150mm wafer qhov ntau thiab tsawg, cov wafers no tau tsim los ntawm ntau yam SiC substrate xaiv, suav nrog 4H-N, HPSI, thiab 4H / 6H-P hom, tsim kom tau raws li cov kev cai tshwj xeeb rau hluav taws xob hluav taws xob, RF amplifiers, thiab lwm yam khoom siv semiconductor siab heev. Nrog rau customizable epitaxial khaubncaws sab nraud povtseg thiab tshwj xeeb SiC substrates, peb wafers yog tsim los xyuas kom meej efficiency siab, thermal tswj, thiab kev cia siab rau kev thov kev lag luam daim ntaub ntawv.

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Product Detail

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Nta

● Epitaxial Txheej Thickness: Customizable los ntawm1.0 µmrau3,5m ;ua, optimized rau siab zog thiab zaus ua haujlwm.

●SiC Substrate Options: Muaj nrog ntau yam SiC substrates, suav nrog:

4 H-N: High-quality Nitrogen-doped 4H-SiC rau high-frequency, high-power applications.
HPSI: High-Purity Semi-Insulating SiC rau cov ntawv thov kom muaj hluav taws xob cais tawm.
4H/6H-P: Sib xyaw 4H thiab 6H-SiC rau kev sib npaug ntawm kev ua haujlwm siab thiab kev ntseeg tau.

● Wafer Qhov ntau thiab tsawg: Muaj nyob rau hauv100 hlithiab150 hlidiameters rau versatility nyob rau hauv cov cuab yeej scaling thiab kev koom ua ke.

● High Breakdown Voltage: GaN ntawm SiC thev naus laus zis muab cov hluav taws xob tawg siab, ua kom muaj kev ua tau zoo hauv kev siv hluav taws xob siab.

●High Thermal Conductivity: SiC's inherent thermal conductivity (kwv yees 490 W/m²) ua kom muaj cua sov zoo heev rau kev siv hluav taws xob ntau.

Technical Specifications

Parameter	Tus nqi
Wafer Txoj kab uas hla	100 hli, 150mm
Epitaxial Txheej Thickness	1.0 µm - 3.5 µm (customizable)
SiC Substrate Hom	4H-N, HPSI, 4H/6H-P
SiC Thermal conductivity	490 W/m²
SiC Resistivity	4 H-NLoj: 10 * 6 Ω,HPSIHom: Semi-Insulating,4H/6H-P4H / 6H sib xyaw
GaN Txheej Thickness	1.0 µm - 2.0 µm
GaN Carrier Concentration	10^18 cm^-3 rau 10^19 cm^-3 (Customizable)
Wafer Nto Zoo	RMS Roughness: <1 nm
Dislocation Ceev	<1 x 10^6 cm^-2
Wafer Bow	<50 µm
Wafer Flatness	<5 µm
Ua haujlwm kub siab tshaj plaws	400 ° C (ib txwm rau GaN-on-SiC li)

Daim ntawv thov

●Power Electronics:GaN-on-SiC wafers muab kev ua haujlwm siab thiab cua sov dissipation, ua rau lawv zoo tagnrho rau lub zog amplifiers, lub zog hloov dua siab tshiab, thiab lub zog-inverter circuits siv nyob rau hauv hluav taws xob tsheb, lub zog tauj dua tshiab, thiab kev lag luam machinery.
● RF Fais Amplifiers:Kev sib xyaw ua ke ntawm GaN thiab SiC yog qhov zoo tshaj plaws rau high-frequency, high-power RF applications xws li kev sib txuas lus, kev sib txuas lus satellite, thiab radar systems.
●Aerospace thiab Defense:Cov wafers no yog tsim rau aerospace thiab tiv thaiv technologies uas yuav tsum tau high-kev ua tau zoo fais fab electronics thiab kev sib txuas lus systems uas muaj peev xwm ua hauj lwm nyob rau hauv hnyav tej yam kev mob.
● Automotive Applications:Qhov zoo tshaj plaws rau kev ua tau zoo ntawm lub zog hluav taws xob hauv tsheb hluav taws xob (EVs), hybrid tsheb (HEVs), thiab chaw them nqi, ua kom muaj zog hloov pauv thiab tswj tau zoo.
● Tub rog thiab Radar Systems:GaN-on-SiC wafers siv nyob rau hauv radar systems rau lawv cov high efficiency, hwj chim tuav, thiab thermal ua hauj lwm nyob rau hauv xav tau kev pab.
● Microwave thiab Millimeter-Wave Applications:Rau cov kev sib txuas lus tiam tom ntej, suav nrog 5G, GaN-on-SiC muab kev ua haujlwm zoo nyob rau hauv high-power microwave thiab millimeter-wave ranges.

Q&A

Q1: Dab tsi yog cov txiaj ntsig ntawm kev siv SiC ua lub substrate rau GaN?

A1:Silicon Carbide (SiC) muaj cov thermal conductivity zoo dua, siab tawg voltage, thiab txhua yam muaj zog piv rau cov tsoos substrates xws li silicon. Qhov no ua rau GaN-on-SiC wafers zoo tagnrho rau high-power, high-frequency, thiab high-temperature applications. SiC substrate pab dissipate cua sov tsim los ntawm GaN li, txhim kho kev ntseeg tau thiab kev ua tau zoo.

Q2: Cov txheej txheej epitaxial puas tuaj yeem kho tau rau cov ntawv thov tshwj xeeb?

A2:Yog lawm, cov txheej txheej epitaxial thickness tuaj yeem hloov kho nyob rau hauv ntau yam1.0 µm 3.5 µm, nyob ntawm lub hwj chim thiab zaus yuav tsum tau ntawm koj daim ntawv thov. Peb tuaj yeem tsim cov GaN txheej tuab los ua kom zoo rau kev ua haujlwm rau cov khoom siv tshwj xeeb xws li lub zog amplifiers, RF systems, lossis high-frequency circuits.

Q3: Qhov txawv ntawm 4H-N, HPSI, thiab 4H/6H-P SiC substrates yog dab tsi?

A3:

4 H-N: Nitrogen-doped 4H-SiC feem ntau yog siv rau cov kev siv ntau zaus uas xav tau kev ua haujlwm siab hauv hluav taws xob.
HPSI: High-Purity Semi-Insulating SiC muab hluav taws xob cais tawm, zoo tagnrho rau cov ntawv thov uas yuav tsum muaj hluav taws xob tsawg.
4H/6H-P: Kev sib xyaw ntawm 4H thiab 6H-SiC uas sib npaug kev ua tau zoo, muab kev sib xyaw ua haujlwm siab thiab muaj zog, haum rau ntau yam kev siv hluav taws xob hluav taws xob.

Q4: Puas yog GaN-on-SiC wafers haum rau cov ntawv thov hluav taws xob zoo li lub tsheb hluav taws xob thiab lub zog tauj dua tshiab?

A4:Yog lawm, GaN-on-SiC wafers yog qhov zoo rau kev siv hluav taws xob siab xws li tsheb hluav taws xob, hluav taws xob tauj dua tshiab, thiab cov tshuab kev lag luam. Lub siab tawg voltage, siab thermal conductivity, thiab lub zog tuav lub peev xwm ntawm GaN-on-SiC pab kiag li lawm pab kom lawv ua tau zoo nyob rau hauv xav tau lub zog hloov dua siab tshiab thiab tswj circuits.

Q5: Dab tsi yog qhov txawv txav ceev rau cov wafers no?

A5:Lub dislocation ceev ntawm cov GaN-on-SiC wafers yog feem ntau<1 x 10^6 cm^-2, uas ua kom muaj kev loj hlob zoo ntawm epitaxial, txo qhov tsis xws luag thiab txhim kho cov cuab yeej ua haujlwm thiab kev ntseeg siab.

Q6: Kuv puas tuaj yeem thov qhov loj me lossis SiC substrate?

A6:Yog lawm, peb muab customized wafer qhov ntau thiab tsawg (100mm thiab 150mm) thiab SiC substrate hom (4H-N, HPSI, 4H / 6H-P) kom tau raws li cov kev xav tau tshwj xeeb ntawm koj daim ntawv thov. Thov hu rau peb rau kev xaiv customization ntxiv thiab los tham txog koj cov kev xav tau.

Q7: GaN-on-SiC wafers ua haujlwm li cas hauv qhov chaw huab cua?

A7:GaN-on-SiC wafers yog qhov zoo tagnrho rau qhov chaw huab cua vim lawv cov thermal stability, siab zog tuav, thiab zoo heev tshav kub dissipation muaj peev xwm. Cov wafers no ua tau zoo nyob rau hauv high-temperature, high-power, thiab high-frequency tej yam kev mob uas feem ntau ntsib nyob rau hauv aerospace, tiv thaiv, thiab industrial daim ntaub ntawv.

Xaus

Peb Customized GaN-on-SiC Epitaxial Wafers muab cov khoom zoo tshaj plaws ntawm GaN thiab SiC los muab kev ua tau zoo tshaj plaws hauv kev siv hluav taws xob thiab kev siv ntau zaus. Nrog ntau qhov kev xaiv SiC substrate thiab cov txheej txheem epitaxial customizable, cov wafers no zoo tagnrho rau kev lag luam uas xav tau kev ua haujlwm siab, kev tswj xyuas thermal, thiab kev ntseeg siab. Txawm hais tias rau hluav taws xob hluav taws xob, RF systems, lossis daim ntawv thov kev tiv thaiv, peb GaN-on-SiC wafers muab cov kev ua tau zoo thiab kev hloov pauv uas koj xav tau.