Gallium Nitride ntawm Silicon wafer 4inch 6inch Tailored Si Substrate Orientation, Resistivity, thiab N-hom / P-hom Options
Nta
●Wide Bandgap:GaN (3.4 eV) muab kev txhim kho tseem ceeb hauv high-frequency, high-power, thiab high-temperature performance piv rau cov tsoos silicon, ua rau nws zoo tagnrho rau cov khoom siv fais fab thiab RF amplifiers.
●Customizable Si Substrate Orientation:Xaiv los ntawm qhov sib txawv Si substrate orientations xws li <111>, <100>, thiab lwm yam kom phim cov khoom siv tshwj xeeb.
●Customized Resistivity:Xaiv qhov sib txawv ntawm cov kev xaiv resistivity rau Si, los ntawm semi-insulating mus rau high-resistivity thiab low-resistivity los optimize ntaus ntawv kev ua tau zoo.
● Doping Hom:Muaj nyob rau hauv N-hom lossis P-hom doping kom phim cov khoom siv hluav taws xob, RF transistors, lossis LEDs.
● High Breakdown Voltage:GaN-on-Si wafers muaj qhov hluav taws xob tawg siab (txog 1200V), tso cai rau lawv los tswj cov kev siv hluav taws xob siab.
● Kev hloov nrawm dua:GaN muaj cov khoom siv hluav taws xob ntau dua thiab kev hloov pauv qis dua li silicon, ua GaN-on-Si wafers zoo tagnrho rau kev kub ceev circuits.
● Txhim kho qhov ua tau zoo thermal:Txawm hais tias tsis tshua muaj thermal conductivity ntawm silicon, GaN-on-Si tseem muaj cov thermal stability zoo dua, nrog cov cua kub zoo dua li cov khoom siv silicon.
Technical Specifications
| Parameter | Tus nqi |
| Wafer Loj | 4 nti, 6 nti |
| Si Substrate Orientation | <111>, <100>, kev cai |
| Si Resistivity | High-resistivity, Semi-insulating, Tsawg-resistivity |
| Hom tshuaj Doping | N-type, P-type |
| GaN Txheej Thickness | 100nm - 5000nm (customizable) |
| AlGaN Barrier Txheej | 24% - 28% Al (ib txwm 10-20 nm) |
| Kev tawg Voltage | 600V-1200V |
| Electron Mobility | 2000 cm²/V·s |
| Hloov zaus | Mus txog 18 GHz |
| Wafer Nto Roughness | RMS ~ 0.25 nm (AFM) |
| GaN Sheet Resistance | 437,9 m² os |
| Tag nrho Wafer Warp | <25 µm (siab tshaj) |
| Thermal conductivity | 1.3 - 2.1 W / cm · K |
Daim ntawv thov
Fais fab Electronics: GaN-on-Si yog qhov zoo tagnrho rau cov khoom siv hluav taws xob xws li lub zog amplifiers, converters, thiab inverters siv nyob rau hauv lub tshuab hluav taws xob tauj dua tshiab, hluav taws xob tsheb (EVs), thiab cov khoom siv hauv tsev. Nws lub siab tawg voltage thiab tsis tshua muaj kev tiv thaiv kom muaj zog hloov pauv tau zoo, txawm tias nyob rau hauv kev siv hluav taws xob siab.
RF thiab Microwave Communications: GaN-on-Si wafers muaj peev xwm ua haujlwm siab, ua rau lawv zoo tshaj plaws rau RF fais fab amplifiers, satellite kev sib txuas lus, radar systems, thiab 5G technologies. Nrog kev hloov pauv siab dua thiab muaj peev xwm ua haujlwm ntawm ntau zaus (txog18 GHz), GaN cov cuab yeej muab kev ua tau zoo tshaj plaws hauv cov ntawv thov no.
Automotive Electronics: GaN-on-Si yog siv rau hauv tsheb fais fab, suav nrogon-board chargers (OBCs)thiabDC-DC converters. Nws muaj peev xwm ua haujlwm ntawm qhov kub siab dua thiab tiv taus qhov hluav taws xob ntau dua ua rau nws zoo rau kev siv hluav taws xob tsheb uas xav tau lub zog hloov dua siab tshiab.
LED thiab Optoelectronics: GaN yog cov khoom xaiv rau xiav thiab dawb LEDs. GaN-on-Si wafers yog siv los tsim cov teeb pom kev zoo LED teeb pom kev zoo, muab kev ua tau zoo hauv kev teeb pom kev zoo, tso saib thev naus laus zis, thiab kev sib txuas lus kho qhov muag.
Q&A
Q1: Dab tsi yog qhov zoo ntawm GaN tshaj silicon hauv cov khoom siv hluav taws xob?
A1:GaN muaj ibdav dav bandgap (3.4 eV)tshaj silicon (1.1 eV), uas tso cai rau nws tiv taus ntau dua voltages thiab kub. Cov cuab yeej no tso cai rau GaN los tswj cov ntawv thov hluav taws xob ntau dua, txo cov hluav taws xob poob thiab ua kom lub cev ua haujlwm tau zoo. GaN tseem muaj kev hloov pauv sai dua, uas yog qhov tseem ceeb rau cov khoom siv ntau zaus xws li RF amplifiers thiab lub zog hloov pauv.
Q2: Kuv puas tuaj yeem hloov kho Si substrate orientation rau kuv daim ntawv thov?
A2:Yog, peb muabcustomizable Si substrate orientationsxws li<111>, <100>, thiab lwm yam kev taw qhia nyob ntawm koj lub cuab yeej xav tau. Kev taw qhia ntawm Si substrate plays lub luag haujlwm tseem ceeb hauv kev ua haujlwm ntawm cov cuab yeej, suav nrog cov yam ntxwv hluav taws xob, kev coj tus cwj pwm thermal, thiab kev ruaj ntseg txhua yam.
Q3: Dab tsi yog cov txiaj ntsig ntawm kev siv GaN-on-Si wafers rau kev siv ntau zaus?
A3:GaN-on-Si wafers muab qhov zoo tshaj plawshloov ceev, ua kom muaj kev ua haujlwm sai dua ntawm cov zaus ntau dua piv rau silicon. Qhov no ua rau lawv zoo tagnrho rauRFthiabmicrowavedaim ntawv thov, raws li zoo raws li high-frequencycov khoom siv fais fabxws liHEMTs(High Electron Mobility Transistors) thiabRF amplifiers. GaN lub zog hluav taws xob ntau dua kuj ua rau txo qis kev hloov pauv thiab txhim kho kev ua haujlwm.
Q4: Cov kev xaiv doping twg muaj rau GaN-on-Si wafers?
A4:Peb muab ob qho tib siN-typethiabP-typedoping xaiv, uas feem ntau yog siv rau ntau hom khoom siv semiconductor.N-hom dopingyog zoo tagnrho raufais fab mov transistorsthiabRF amplifiers, thaumP-hom dopingfeem ntau yog siv rau optoelectronic li zoo li LEDs.
Xaus
Peb Customized Gallium Nitride ntawm Silicon (GaN-on-Si) Wafers muab cov kev daws teeb meem zoo tshaj plaws rau kev siv hluav taws xob siab, lub zog siab, thiab kub kub. Nrog rau customizable Si substrate orientations, resistivity, thiab N-hom / P-hom doping, cov wafers yog tailored kom tau raws li cov kev xav tau ntawm kev lag luam xws li lub hwj chim electronics thiab automotive systems rau RF kev sib txuas lus thiab LED technologies. Leveraging lub superior zog ntawm GaN thiab lub scalability ntawm silicon, cov wafers no muaj kev txhim khu kev qha, efficiency, thiab yav tom ntej-proofing rau lwm tiam.
Daim duab qhia ntxaws
