HPSI SiC wafer dia: 3inch thickness: 350um ± 25 µm rau fais fab Electronics

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Lub HPSI (High-Purity Silicon Carbide) SiC wafer nrog txoj kab uas hla ntawm 3 ntiv tes thiab lub thickness ntawm 350 µm ± 25 µm yog tsim tshwj xeeb rau kev siv hluav taws xob hluav taws xob uas yuav tsum tau muaj kev ua haujlwm siab. Lub SiC wafer no muaj cov thermal conductivity zoo dua, siab tawg hluav taws xob, thiab kev ua haujlwm ntawm qhov kub thiab txias, ua rau nws yog qhov kev xaiv zoo tshaj plaws rau kev thov loj hlob rau cov khoom siv hluav taws xob muaj zog thiab muaj zog. SiC wafers yog tshwj xeeb tshaj yog haum rau high-voltage, high-tam sim no, thiab high-frequency daim ntaub ntawv, qhov twg ib txwm silicon substrates tsis ua raws li cov kev xav tau ntawm kev ua hauj lwm.
Peb HPSI SiC wafer, tsim los siv cov txheej txheem kev lag luam tshiab tshaj plaws, muaj nyob hauv ntau qib, txhua tus tsim los ua kom tau raws li cov kev tsim khoom tshwj xeeb. Lub wafer nthuav tawm cov qauv kev ncaj ncees, cov khoom siv hluav taws xob, thiab qhov zoo ntawm qhov chaw, kom ntseeg tau tias nws tuaj yeem xa cov kev ua tau zoo hauv kev xav tau, suav nrog hluav taws xob semiconductors, hluav taws xob tsheb (EVs), cov tshuab hluav taws xob tauj dua tshiab, thiab kev hloov hluav taws xob muaj zog.

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HPSI SiC wafers yog siv nyob rau hauv ntau hom kev siv hluav taws xob hluav taws xob, suav nrog:

Lub zog semiconductors:SiC wafers feem ntau ua haujlwm hauv kev tsim hluav taws xob diodes, transistors (MOSFETs, IGBTs), thiab thyristors. Cov khoom siv hluav taws xob no tau siv dav hauv kev siv hluav taws xob hloov hluav taws xob uas xav tau kev ua haujlwm siab thiab kev ntseeg siab, xws li hauv kev lag luam lub cev muaj zog, cov khoom siv hluav taws xob, thiab inverters rau lub tshuab hluav taws xob tauj dua tshiab.
Electric Vehicles (EVs):Hauv cov tsheb fais fab fais fab, SiC-raws li cov khoom siv hluav taws xob muab kev hloov pauv sai dua, kev siv hluav taws xob ntau dua, thiab txo qis thermal poob. SiC Cheebtsam yog qhov zoo tagnrho rau cov ntawv thov hauv kev tswj hwm roj teeb (BMS), kev them nqi hluav taws xob, thiab on-board chargers (OBCs), qhov uas txo qhov hnyav thiab ua kom lub zog hloov pauv tau zoo yog qhov tseem ceeb.

Renewable Energy Systems:SiC wafers tau siv ntau dua hauv cov hnub ci inverters, cua turbine generators, thiab lub zog cia tshuab, qhov chaw ua haujlwm siab thiab muaj zog yog qhov tseem ceeb. Si-raws cov khoom siv kom muaj zog ntau dua thiab txhim kho kev ua tau zoo hauv cov ntawv thov no, txhim kho tag nrho lub zog hloov pauv tau zoo.

Muaj zog Electronics:Hauv kev ua haujlwm siab, xws li tsav tsheb, neeg hlau, thiab cov khoom siv hluav taws xob loj, kev siv SiC wafers tso cai rau kev txhim kho kev ua haujlwm ntawm kev ua tau zoo, kev ntseeg siab, thiab kev tswj xyuas thermal. SiC cov cuab yeej tuaj yeem tswj cov kev hloov pauv ntau zaus thiab kub siab, ua rau lawv tsim nyog rau qhov xav tau ib puag ncig.

Telecommunications thiab Data Centers:SiC yog siv rau hauv cov khoom siv hluav taws xob rau cov khoom siv sib txuas lus thiab cov chaw khaws ntaub ntawv, qhov chaw muaj kev ntseeg siab thiab kev hloov hluav taws xob zoo yog qhov tseem ceeb. SiC-raws li cov cuab yeej siv hluav taws xob ua kom muaj txiaj ntsig zoo dua ntawm qhov me me, uas txhais tau tias txo qis kev siv hluav taws xob thiab ua kom txias dua hauv cov txheej txheem loj.

Lub siab tawg hluav taws xob, tsis muaj kev tiv thaiv, thiab thermal conductivity zoo heev ntawm SiC wafers ua rau lawv yog qhov zoo tshaj plaws substrate rau cov kev siv siab heev, ua rau kev txhim kho ntawm cov khoom siv hluav taws xob hluav taws xob txuas ntxiv mus.

Cov khoom

Khoom	Tus nqi
Wafer Txoj kab uas hla	3 nti (76.2 hli)
Wafer Thickness	350 µm ± 25 µm
Wafer Orientation	<0001> ntawm-axis ± 0.5°
Micropipe Density (MPD)	≤ 1 cm⁻²
Hluav taws xob Resistivity	≥ 1E7 Ω·cm
Dopant	Undoped
Thawj Txoj Kev Ncaj Ncees	{11-20} ± 5.0°
Qhov Loj Loj Loj	32.5 hli ± 3.0 hli
Secondary Flat Length	18.0 hli ± 2.0 hli
Secondary Flat Orientation	Si lub ntsej muag: 90 ° CW los ntawm thawj lub tiaj tus ± 5.0 °
Ntug Exclusion	3 hli
LTV/TTV/Bow/Warp	3 µm / 10 µm / ± 30 µm / 40 µm
Nto Roughness	C-lub ntsej muag: Polished, Si-face: CMP
Cracks (tshuaj xyuas los ntawm kev siv lub teeb siab)	Tsis muaj
Hex Phaj (kuaj los ntawm kev siv lub teeb siab)	Tsis muaj
Polytype Areas (tshuaj xyuas los ntawm lub teeb ci siab)	Thaj tsam 5%
Scratches (tshuaj xyuas los ntawm kev siv lub teeb ci siab)	≤ 5 khawb, cumulative ntev ≤ 150 mm
Ntug Chiping	Tsis muaj kev tso cai ≥ 0.5 mm dav thiab qhov tob
Surface Contamination (tshuaj xyuas los ntawm lub teeb ci siab)	Tsis muaj

Cov txiaj ntsig tseem ceeb

High Thermal conductivity:SiC wafers paub txog lawv lub peev xwm tshwj xeeb los ua kom cov cua sov, uas tso cai rau cov khoom siv hluav taws xob ua haujlwm ntawm kev ua tau zoo dua thiab tswj cov dej ntws ntau dua yam tsis muaj cua sov. Cov yam ntxwv no yog qhov tseem ceeb hauv kev siv hluav taws xob hluav taws xob uas tswj kev kub ntxhov yog qhov nyuaj heev.
High Breakdown Voltage:Qhov dav bandgap ntawm SiC ua rau cov cuab yeej ua kom siab dua qhov hluav taws xob ntau dua, ua rau lawv zoo tagnrho rau kev siv hluav taws xob siab xws li daim phiaj hluav taws xob, hluav taws xob tsheb, thiab cov tshuab ua lag luam.
Kev ua haujlwm siab:Kev sib xyaw ua ke ntawm kev hloov pauv ntau zaus thiab tsis tshua muaj kev cuam tshuam ua rau cov khoom siv nrog qis zog poob, txhim kho tag nrho cov kev ua haujlwm ntawm lub zog hloov pauv thiab txo qhov xav tau ntawm cov tshuab cua txias.
Kev ntseeg siab nyob rau hauv Harsh Environments:SiC muaj peev xwm ua haujlwm ntawm qhov kub thiab txias (txog 600 ° C), uas ua rau nws tsim nyog rau kev siv nyob rau hauv ib puag ncig uas yuav ua rau cov khoom siv silicon-raws li ib txwm muaj.
Kev txuag hluav taws xob:SiC cov cuab yeej siv hluav taws xob txhim kho lub zog hloov hluav taws xob, uas yog qhov tseem ceeb hauv kev txo qis kev siv hluav taws xob, tshwj xeeb tshaj yog nyob rau hauv cov tshuab loj xws li kev hloov hluav taws xob, tsheb hluav taws xob, thiab hluav taws xob txuas ntxiv dua tshiab.