Indium Antimonide (InSb) wafers N hom P hom Epi npaj undoped Te doped los yog Ge doped 2inch 3inch 4inch thickness Indium Antimonide (InSb) wafers
Nta
Doping Options:
1. Undoped:Cov wafers no tsis pub dawb los ntawm cov tshuaj doping, ua rau lawv zoo tagnrho rau cov ntawv tshwj xeeb xws li kev loj hlob ntawm epitaxial.
2.Te Doped (N-Hom):Tellurium (Te) doping feem ntau yog siv los tsim N-hom wafers, uas yog qhov zoo tagnrho rau kev siv xws li infrared detectors thiab high-speed electronics.
3.Ge Doped (P-Hom):Germanium (Ge) doping yog siv los tsim P-hom wafers, muab lub qhov siab txav mus rau cov ntawv siv semiconductor siab heev.
Kev xaiv loj:
1.Available nyob rau hauv 2-nti, 3-nti, thiab 4-inch diameters. Cov wafers no ua raws li cov kev xav tau ntawm kev siv tshuab, los ntawm kev tshawb fawb thiab kev tsim kho mus rau kev tsim khoom loj.
2.Precise txoj kab uas hla tolerances xyuas kom sib xws nyob rau hauv batch, nrog diameters ntawm 50.8 ± 0.3 hli (rau 2-nti wafers) thiab 76.2 ± 0.3 hli (rau 3-nti wafers).
Thickness Control:
1.Cov wafers muaj nyob rau hauv thickness ntawm 500 ± 5μm rau kev pom zoo nyob rau hauv ntau yam kev siv.
2.Kev ntsuas ntxiv xws li TTV (Tag Nrho Thickness Variation), BOW, thiab Warp tau ua tib zoo tswj xyuas kom muaj qhov sib xws thiab zoo.
Nto Zoo:
1.Cov wafers tuaj nrog polished / etched nto rau kev txhim kho kho qhov muag thiab hluav taws xob kev ua tau zoo.
2.Cov chaw no zoo tagnrho rau kev loj hlob epitaxial, muab lub hauv paus du rau kev ua haujlwm ntxiv hauv cov khoom siv ua haujlwm siab.
Epi-Ready:
1.Cov InSb wafers yog epi-npaj, txhais tau tias lawv tau kho ua ntej rau cov txheej txheem epitaxial deposition. Qhov no ua rau lawv zoo tagnrho rau kev siv hauv kev tsim khoom semiconductor qhov twg cov txheej txheem epitaxial yuav tsum tau cog rau saum lub wafer.
Daim ntawv thov
1.Infrared Detectors:InSb wafers feem ntau siv nyob rau hauv infrared (IR) nrhiav kom tau, tshwj xeeb tshaj yog nyob rau hauv nruab nrab wavelength infrared (MWIR). Cov wafers no yog qhov tseem ceeb rau kev pom kev hmo ntuj, thermal imaging, thiab infrared spectroscopy daim ntaub ntawv.
2.High-Speed Electronics:Vim lawv lub zog hluav taws xob siab, InSb wafers tau siv hauv cov khoom siv hluav taws xob ceev xws li cov khoom siv hluav taws xob ntau zaus, cov khoom siv hluav taws xob zoo quantum, thiab cov hluav taws xob muaj hluav taws xob siab (HEMTs).
3.Quantum Well Devices:Qhov nqaim bandgap thiab zoo heev electron txav ua rau InSb wafers haum rau siv nyob rau hauv quantum zoo li. Cov khoom siv no yog cov khoom tseem ceeb hauv lasers, detectors, thiab lwm yam optoelectronic systems.
4.Spintronic Devices:InSb tseem tab tom tshawb nrhiav hauv cov ntawv thov spintronic, qhov twg electron spin yog siv rau kev ua ntaub ntawv. Cov khoom siv qis qis-orbit coupling ua rau nws zoo tagnrho rau cov khoom siv ua haujlwm siab no.
5.Terahertz (THz) Radiation Applications:InSb-raws li cov khoom siv yog siv rau hauv daim ntawv thov hluav taws xob THz, suav nrog kev tshawb fawb tshawb fawb, kev kos duab, thiab cov yam ntxwv ntawm cov khoom siv. Lawv pab txhawb cov thev naus laus zis xws li THz spectroscopy thiab THz imaging systems.
6.Thermoelectric Devices:InSb cov khoom tshwj xeeb ua rau nws yog ib qho khoom siv zoo nkauj rau cov ntawv siv thermoelectric, uas nws tuaj yeem siv los hloov cov cua sov rau hauv hluav taws xob zoo, tshwj xeeb tshaj yog nyob rau hauv kev siv niche xws li chaw siv tshuab lossis hluav taws xob tsim hluav taws xob hauv qhov chaw huab cua.
Khoom Parameters
| Parameter | 2-nti | 3-nti | 4-nti |
| Txoj kab uas hla | 50.8 ± 0.3 hli | 76.2 ± 0.3 hli | - |
| Thickness | 500 ± 5 hli | 650 ± 5 hli | - |
| Nto | Polished / Etched | Polished / Etched | Polished / Etched |
| Hom tshuaj Doping | Undoped, Te-doped (N), Ge-doped (P) | Undoped, Te-doped (N), Ge-doped (P) | Undoped, Te-doped (N), Ge-doped (P) |
| Kev taw qhia | (100) | (100) | (100) |
| Pob | Ib leeg | Ib leeg | Ib leeg |
| Epi-npaj | Yog lawm | Yog lawm | Yog lawm |
Hluav taws xob Parameters rau Te Doped (N-Hom):
- Mobility2000-5000 cm²/V·s
- Kev tiv thaiv: (1-1000) Ω·cm
- EPD (Defect Density): ≤2000 qhov tsis xws luag / cm²
Hluav taws xob Parameters rau Ge Doped (P-Type):
- Mobility4000-8000 cm²/V·s
- Kev tiv thaiv: (0.5-5) Ω·cm
- EPD (Defect Density): ≤2000 qhov tsis xws luag / cm²
Xaus
Indium Antimonide (InSb) wafers yog cov khoom siv tseem ceeb rau ntau yam kev ua haujlwm siab hauv cov khoom siv hluav taws xob, optoelectronics, thiab infrared technologies. Nrog rau lawv cov khoom siv hluav taws xob zoo heev, kev sib txuas qis qis, thiab ntau yam kev xaiv doping (Te rau N-hom, Ge rau P-hom), InSb wafers yog qhov zoo tagnrho rau siv hauv cov khoom siv xws li infrared detectors, high-speed transistors, quantum well devices, thiab spintronic devices.
Cov wafers muaj nyob rau hauv ntau qhov ntau thiab tsawg (2-nti, 3-nti, thiab 4-nti), nrog cov tuab tuab tswj thiab epi-npaj qhov chaw, kom ntseeg tau tias lawv ua tau raws li cov kev xav tau ntawm niaj hnub semiconductor fabrication. Cov wafers no zoo meej rau cov ntawv thov hauv thaj chaw xws li IR nrhiav pom, hluav taws xob ceev ceev, thiab THz hluav taws xob, ua kom cov thev naus laus zis hauv kev tshawb fawb, kev lag luam, thiab kev tiv thaiv.
Daim duab qhia ntxaws
