InSb wafer 2inch 3inch undoped Ntype P hom orientation 111 100 rau Infrared Detectors

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Indium Antimonide (InSb) wafers yog cov ntaub ntawv tseem ceeb siv nyob rau hauv infrared detection technologies vim lawv nqaim bandgap thiab siab electron mus. Muaj nyob rau hauv 2-nti thiab 3-inch diameters, cov wafers no muaj nyob rau hauv undoped, N-type, thiab P-hom variations. Cov wafers yog fabricated nrog orientations ntawm 100 thiab 111, muab kev yooj yim rau ntau yam infrared detection thiab semiconductor daim ntaub ntawv. Lub siab rhiab heev thiab tsis tshua muaj suab nrov ntawm InSb wafers ua rau lawv zoo tagnrho rau siv nyob rau hauv nruab nrab wavelength infrared (MWIR) detectors, infrared imaging systems, thiab lwm yam optoelectronic daim ntaub ntawv uas yuav tsum tau precision thiab muaj peev xwm ua tau zoo.

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Doping Options:
1. Undoped:Cov wafers no tsis pub dawb los ntawm cov neeg ua haujlwm doping thiab feem ntau yog siv rau kev siv tshwj xeeb xws li kev loj hlob ntawm epitaxial, qhov twg lub wafer ua raws li lub substrate ntshiab.
2.N-Hom (Te Doped):Tellurium (Te) doping yog siv los tsim N-hom wafers, muab lub zog hluav taws xob siab thiab ua rau lawv tsim nyog rau cov khoom siv hluav taws xob infrared, hluav taws xob ceev ceev, thiab lwm yam kev siv uas yuav tsum tau siv hluav taws xob zoo.
3.P-Type (Ge Doped):Germanium (Ge) doping yog siv los tsim P-hom wafers, muab lub qhov siab txav mus los thiab muab kev ua tau zoo rau infrared sensors thiab photodetectors.

Kev xaiv loj:
1.Cov wafers muaj nyob rau hauv 2-nti thiab 3-inch diameters. Qhov no ua kom muaj kev sib raug zoo nrog ntau yam txheej txheem semiconductor fabrication thiab cov khoom siv.
2.Qhov 2-nti wafer muaj 50.8 ± 0.3mm txoj kab uas hla, thaum 3-nti wafer muaj 76.2 ± 0.3mm txoj kab uas hla.

Kev taw qhia:
1.Lub wafers muaj nyob rau hauv orientations ntawm 100 thiab 111. Lub 100 orientation yog zoo tagnrho rau high-ceev electronics thiab infrared detectors, thaum lub 111 orientation yog nquag siv rau cov khoom uas yuav tsum tau tshwj xeeb hluav taws xob los yog optical zog.

Nto Zoo:
1.Cov wafers no tuaj nrog polished / etched nto rau zoo heev zoo, ua kom pom kev ua tau zoo nyob rau hauv daim ntaub ntawv uas yuav tsum tau meej optical los yog hluav taws xob yam ntxwv.
2.Qhov kev npaj saum npoo ua kom tsis muaj qhov tsis xws luag, ua rau cov wafers no zoo tagnrho rau kev kuaj xyuas infrared daim ntawv thov qhov kev ua tau zoo sib xws yog qhov tseem ceeb.

Epi-Ready:
1.Cov wafers no yog epi-npaj, ua rau lawv haum rau daim ntaub ntawv uas muaj epitaxial loj hlob uas ntxiv txheej ntawm cov khoom yuav muab tso rau ntawm lub wafer rau advanced semiconductor los yog optoelectronic ntaus ntawv fabrication.

Daim ntawv thov

1.Infrared Detectors:InSb wafers tau siv dav hauv kev tsim cov khoom siv hluav taws xob infrared, tshwj xeeb tshaj yog nyob rau hauv nruab nrab wavelength infrared (MWIR). Lawv yog ib qho tseem ceeb rau kev pom kev hmo ntuj, thermal imaging, thiab kev siv tub rog.
2.Infrared Imaging Systems:Lub siab rhiab heev ntawm InSb wafers tso cai rau cov duab infrared meej hauv ntau qhov chaw, suav nrog kev ruaj ntseg, kev soj ntsuam, thiab kev tshawb fawb txog kev tshawb fawb.
3.High-Speed Electronics:Vim lawv lub zog hluav taws xob siab, cov wafers no tau siv hauv cov khoom siv hluav taws xob zoo xws li cov transistors high-speed thiab optoelectronic li.
4.Quantum Well Devices:InSb wafers yog zoo tagnrho rau quantum zoo daim ntaub ntawv nyob rau hauv lasers, detectors, thiab lwm yam optoelectronic systems.

Khoom Parameters

Parameter	2-nti	3-nti
Txoj kab uas hla	50.8 ± 0.3 hli	76.2 ± 0.3 hli
Thickness	500 ± 5 hli	650 ± 5 hli
Nto	Polished / Etched	Polished / Etched
Hom tshuaj Doping	Undoped, Te-doped (N), Ge-doped (P)	Undoped, Te-doped (N), Ge-doped (P)
Kev taw qhia	100, 111 ib	100, 111 ib
Pob	Ib leeg	Ib leeg
Epi-npaj	Yog lawm	Yog lawm

Hluav taws xob Parameters rau Te Doped (N-Hom):

Mobility2000-5000 cm²/V·s
Kev tiv thaiv: (1-1000) Ω·cm
EPD (Defect Density): ≤2000 qhov tsis xws luag / cm²

Hluav Taws Xob Parameters rau Ge Doped (P-Type):

Mobility4000-8000 cm²/V·s
Kev tiv thaiv: (0.5-5) Ω·cm

EPD (Defect Density): ≤2000 qhov tsis xws luag / cm²

Q&A (Cov lus nug nquag nug)

Q1: Dab tsi yog hom doping zoo tshaj plaws rau daim ntawv thov infrared?

A1:Te-doped (N-hom)wafers feem ntau yog qhov kev xaiv zoo tshaj plaws rau kev siv tshuaj ntsuam xyuas infrared, vim tias lawv muaj cov khoom siv hluav taws xob siab thiab kev ua haujlwm zoo hauv nruab nrab wavelength infrared (MWIR) detectors thiab imaging systems.

Q2: Kuv puas tuaj yeem siv cov wafers no rau kev siv hluav taws xob ceev?

A2: Yog, InSb wafers, tshwj xeeb tshaj yog cov nrogN-hom dopingthiab cov100 kev taw qhia, yog qhov zoo rau cov khoom siv hluav taws xob ceev xws li transistors, quantum well devices, thiab optoelectronic Cheebtsam vim lawv cov khoom siv hluav taws xob siab.

Q3: Dab tsi yog qhov txawv ntawm 100 thiab 111 kev taw qhia rau InSb wafers?

A3: Nws100kev taw qhia feem ntau yog siv rau cov khoom siv uas xav tau kev ua haujlwm siab hauv hluav taws xob, thaum lub111Kev taw qhia feem ntau yog siv rau cov ntawv thov tshwj xeeb uas xav tau hluav taws xob sib txawv lossis cov yam ntxwv kho qhov muag, suav nrog qee yam khoom siv optoelectronic thiab sensors.

Q4: Dab tsi yog qhov tseem ceeb ntawm Epi-Ready feature rau InSb wafers?

A4: NwsEpi-npajfeature txhais tau hais tias lub wafer tau raug kho ua ntej rau cov txheej txheem epitaxial deposition. Qhov no yog qhov tseem ceeb rau cov ntawv thov uas xav tau kev loj hlob ntawm cov txheej txheem ntxiv ntawm cov khoom siv sab saum toj ntawm wafer, xws li hauv kev tsim cov khoom siv hluav taws xob siab tshaj lossis cov khoom siv optoelectronic.

Q5: Dab tsi yog cov ntawv thov ntawm InSb wafers hauv infrared thev naus laus zis?

A5: InSb wafers feem ntau yog siv nyob rau hauv infrared detection, thermal imaging, hmo ntuj pom kev, thiab lwm yam infrared sensing technologies. Lawv siab rhiab heev thiab suab nrov tsawg ua rau lawv zoo tagnrho rauNruab nrab wavelength infrared (MWIR)ntes.

Q6: Lub thickness ntawm lub wafer cuam tshuam nws cov kev ua tau zoo li cas?

A6: Lub thickness ntawm lub wafer plays lub luag haujlwm tseem ceeb hauv nws cov khoom ruaj khov thiab cov yam ntxwv hluav taws xob. Thinner wafers feem ntau yog siv nyob rau hauv ntau rhiab daim ntaub ntawv qhov twg meej tswj cov khoom vaj tse yog yuav tsum tau, thaum thicker wafers muab txhim khu kev ruaj ntseg rau tej yam kev siv.

Q7: Kuv yuav xaiv qhov loj npaum li cas wafer rau kuv daim ntawv thov?

A7: Qhov loj wafer tsim nyog nyob ntawm cov cuab yeej tshwj xeeb lossis cov txheej txheem tsim. Cov wafers me me (2-nti) feem ntau yog siv rau kev tshawb fawb thiab kev siv me me, thaum loj wafers (3-nti) feem ntau yog siv rau cov khoom loj thiab cov khoom siv loj uas xav tau cov khoom siv ntau dua.

Xaus

InSb wafers hauv2-ntithiab3-ntiqhov ntau thiab tsawg, nrogua tsis tau, N-type, thiabP-typevariations, muaj nuj nqis heev nyob rau hauv semiconductor thiab optoelectronic daim ntaub ntawv, tshwj xeeb tshaj yog nyob rau hauv infrared detection systems. Cov100thiab111Kev taw qhia muab kev yooj yim rau ntau yam kev xav tau ntawm kev siv tshuab, los ntawm cov khoom siv hluav taws xob ceev mus rau infrared imaging systems. Nrog rau lawv qhov tshwj xeeb electron txav mus los, tsis tshua muaj suab nrov, thiab qhov zoo ntawm qhov chaw, cov wafers no zoo tagnrho raunruab nrab wavelength infrared detectorsthiab lwm yam kev ua haujlwm siab.