LT Lithium Tantalate (LiTaO3) Crystal 2inch / 3inch / 4inch / 6inch Orientaiton Y-42 ° / 36 ° / 108 ° Thickness 250-500um

Lus piav qhia luv luv:

LiTaO₃ wafers sawv cev rau ib qho tseem ceeb piezoelectric thiab ferroelectric khoom system, nthuav tawm tshwj xeeb piezoelectric coefficients, thermal stability, thiab optical zog, ua rau lawv indispensable rau nto acoustic yoj (SAW) lim, bulk acoustic yoj (BAW) resonators, optical modulators, thiab infrared detectors. XKH tshwj xeeb hauv kev ua tau zoo LiTaO₃ wafer R&D thiab ntau lawm, siv Czochralski (CZ) siv lead ua kev loj hlob thiab cov txheej txheem ua kua theem epitaxy (LPE) kom ntseeg tau zoo crystalline homogeneity nrog qhov tsis xws luag densities <100/cm².

XKH muab 3-nti, 4-nti, thiab 6-nti LiTaO₃ wafers nrog ntau yam crystallographic orientations (X-txiav, Y-txiav, Z-txiav), txhawb customized doping (Mg, Zn) thiab poling kev kho mob kom tau raws li cov kev thov tshwj xeeb. Cov khoom siv dielectric tas li (ε ~ 40-50), piezoelectric coefficient (d₃₃ ~ 8-10 pC / N), thiab Curie kub (~ 600 ° C) tsim LiTaO₃ raws li qhov nyiam substrate rau high-frequency lim thiab precision sensors.

Peb cov kev lag luam sib xyaw ua ke suav nrog kev loj hlob siv lead ua, wafering, polishing, thiab nyias zaj duab xis tso tawm, nrog lub peev xwm tsim tawm txhua hli ntau tshaj 3,000 wafers los pab 5G kev sib txuas lus, cov neeg siv khoom siv hluav taws xob, photonics, thiab kev lag luam tiv thaiv. Peb muab kev sab laj kev sab laj, kev ua qauv ua qauv, thiab cov kev pabcuam qis qis kom xa cov kev daws teeb meem LiTaO₃ optimized.

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Technical parameters

Lub npe	Optical-qib LiTaO3	Lub suab lus theem LiTaO3
Axial	Z txiav + / - 0.2 °	36 ° Y txiav / 42 ° Y txiav / X txiav(+ / - 0.2 °)
Txoj kab uas hla	76.2 hli + / - 0.3mm /100 ± 0.2 hli	76.2mm + /-0.3mm100mm + /-0.3mm 0r 150 ± 0.5mm
Datum dav hlau	22mm + / - 2mm	22mm + /-2mm32mm + /-2mm
Thickness	500um + /-5mm1000um + /-5mm	500um + /-20mm350um + /-20mm
TTV	≤ 10 hli	≤ 10 hli
Curie kub	605 ° C + / - 0.7 ° C (DTAmethod)	605 ° C + / -3 ° C (DTAmethod
Nto zoo	Ob sab polishing	Ob sab polishing
Chamfered ntug	ntug rounding	ntug rounding

Cov yam ntxwv tseem ceeb

1.Crystal Structure thiab hluav taws xob ua haujlwm

· Crystallographic Stability: 100% 4H-SiC polytype dominance, xoom multicrystalline inclusions (piv txwv li, 6H/15R), nrog XRD rocking nkhaus puv-dav ntawm ib nrab-siab tshaj plaws (FWHM) ≤32.7 arcsec.
· High Carrier Mobility: Electron zog ntawm 5,400 cm² / V·s (4H-SiC) thiab qhov txav ntawm 380 cm² / V·s, ua kom muaj kev tsim khoom siv ntau zaus.
· Radiation Hardness: Withstands 1 MeV neutron irradiation nrog rau kev puas tsuaj rau qhov chaw pib ntawm 1 × 10¹⁵ n / cm², zoo tagnrho rau kev siv aerospace thiab nuclear.

2.Thermal thiab Mechanical Properties

· Exceptional Thermal Conductivity: 4.9 W / cm · K (4H-SiC), triple ntawm silicon, txhawb kev ua haujlwm siab tshaj 200 ° C.
· Tsawg Thermal Expansion Coefficient: CTE ntawm 4.0 × 10⁻⁶ / K (25–1000 ° C), ua kom muaj kev sib raug zoo nrog cov ntim khoom siv silicon thiab txo qis thermal stress.

3.Kev tswj xyuas thiab kev ua haujlwm precision
ua
· Micropipe Density: <0.3 cm⁻² (8-nti wafers), dislocation ceev <1,000 cm⁻² (tsim los ntawm KOH etching).
· Nto Zoo: CMP-polished rau Ra <0.2 nm, ntsib EUV lithography-qib flatness yuav tsum.

Cov ntawv thov tseem ceeb

Domain ua	Daim ntawv thov Scenarios	Technical Advantages
Kev sib txuas lus kho qhov muag	100G / 400G lasers, silicon photonics hybrid modules	InP noob substrates pab ncaj qha bandgap (1.34 eV) thiab Si-raws li heteroepitaxy, txo cov optical coupling poob.
New Energy Tsheb	800V high-voltage inverter, onboard chargers (OBC)	4H-SiC substrates tiv taus> 1,200 V, txo qhov kev poob qis los ntawm 50% thiab lub cev ntim los ntawm 40%.
5G Kev Sib Txuas Lus	millimeter-wave RF li (PA/LNA), lub hauv paus chaw nres tsheb fais fab amplifiers	Semi-insulating SiC substrates (resistivity> 10⁵ Ω·cm) pab kom muaj kev sib tw siab (60 GHz +) passive kev koom ua ke.
Cov Khoom Siv Hluav Taws Xob	High-temperature sensors, tam sim no transformers, nuclear reactor saib	InSb noob substrates (0.17 eV bandgap) xa magnetic rhiab heev txog 300% @ 10 T.

LiTaO₃ Wafers - Cov yam ntxwv tseem ceeb

1. Superior Piezoelectric Performance

· High piezoelectric coefficients (d₃₃~8-10 pC/N, K² ~ 0.5%) pab kom muaj SAW/BAW ntau zaus nrog kev nkag poob <1.5dB rau 5G RF lim

· Cov khoom siv hluav taws xob zoo heev txhawb nqa dav-bandwidth (≥5%) lim tsim rau sub-6GHz thiab mmWave daim ntawv thov

2. Optical Properties

· Broadband pob tshab (> 70% kis tau tus mob los ntawm 400-5000nm) rau electro-optic modulators ua tiav> 40GHz bandwidth

· Muaj zog nonlinear optical susceptibility (χ⁽²⁾ ~ 30pm / V) pab txhawb kev ua haujlwm zoo thib ob (SHG) hauv cov tshuab laser

3. Kev ruaj ntseg ib puag ncig

· High Curie kub (600 ° C) tswj piezoelectric teb nyob rau hauv automotive-qib (-40 ° C txog 150 ° C) ib puag ncig

· Tshuaj inertness tiv thaiv acids/alkalies (pH1-13) kom ntseeg tau nyob rau hauv industrial sensor daim ntaub ntawv

4. Muaj peev xwm kho tau

· Orientation engineering: X-txiav (51 °), Y-txiav (0 °), Z-txiav (36 °) rau cov lus teb piezoelectric

· Cov kev xaiv doping: Mg-doped (optical puas ua hauj lwm), Zn-doped (txhim kho d₃₃)

· Nto tiav: Epitaxial-npaj polishing (Ra<0.5nm), ITO / Au metallization

LiTaO₃ Wafers - Cov ntawv thov tseem ceeb

1. RF Front-End Modules

· 5G NR SAW lim (Band n77/n79) nrog kub coefficient ntawm zaus (TCF) <|-15ppm/°C|

· Ultra-wideband BAW resonators rau WiFi 6E/7 (5.925-7.125GHz)

2. Integrated Photonics

· Kev kub ceev Mach-Zehnder modulators (> 100Gbps) rau kev sib txuas lus kho qhov muag

· QWIP infrared detectors nrog cutoff wavelengths tunable ntawm 3-14μm

3. Automotive Electronics

· Ultrasonic nres sensors nrog> 200kHz ua haujlwm zaus

· TPMS piezoelectric transducers ciaj sia -40 ° C txog 125 ° C thermal cycling

4. Cov Txheej Txheem Tiv Thaiv

· EW txais cov ntxaij lim dej nrog> 60dB tawm-ntawm-band tsis lees paub

· Missile seeker IR windows transmitting 3-5μm MWIR hluav taws xob

5. Cov thev naus laus zis tshiab

· Optomechanical quantum transducers rau microwave-rau-kho qhov muag hloov dua siab tshiab

· PMUT arrays rau kev kho mob ultrasound duab (> 20MHz daws teeb meem)

LiTaO₃ Wafers - XKH Services

1. Supply Chain Management

· Boule-rau-wafer ua nrog 4-lub lim tiam ua lub sij hawm rau cov qauv specifications

· Tus nqi-optimized ntau lawm xa 10-15% tus nqi kom zoo dua piv rau cov neeg sib tw

2. Kev daws teeb meem

· Kev taw qhia tshwj xeeb wafering: 36 ° ± 0.5 ° Y-txiav rau kev ua haujlwm zoo SAW

· Doped compositions: MgO (5mol%) doping rau optical applications

Metallization cov kev pab cuam: Cr/Au (100/1000Å) electrode patterning

3. Kev pab txhawb nqa

· Khoom yam ntxwv: XRD rocking curves (FWHM<0.01°), AFM nto tsom xam

· Ntaus simulation: FEM qauv rau SAW lim tsim optimization

Xaus

LiTaO₃ wafers txuas ntxiv ua kom cov thev naus laus zis nce qib thoob plaws RF kev sib txuas lus, kev sib koom ua ke ntawm photonics, thiab hnyav-ib puag ncig sensors. XKH cov kev txawj ntse ntawm cov khoom siv, kev tsim precision, thiab daim ntawv thov engineering txhawb pab cov neeg siv khoom kov yeej cov teeb meem tsim hauv cov tshuab hluav taws xob tiam tom ntej.