Sapphire yog ib qho siv lead ua ntawm alumina, belongs rau tripartite siv lead ua system, hexagonal qauv, nws cov qauv siv lead ua yog tsim los ntawm peb cov pa atoms thiab ob lub txhuas atoms hauv covalent daim ntawv cog lus hom, teem ze heev, muaj zog sib txuas cov saw thiab lattice zog, thaum nws Crystal sab hauv yuav luag tsis muaj impurities lossis tsis xws luag, yog li nws muaj cov khoom siv hluav taws xob zoo heev, pob tshab, zoo thermal conductivity thiab siab rigidity yam ntxwv. Dav siv los ua qhov rais optical thiab cov ntaub ntawv ua haujlwm siab. Txawm li cas los xij, cov qauv molecular ntawm sapphire yog qhov nyuaj thiab muaj anisotropy, thiab qhov cuam tshuam ntawm cov khoom siv lub cev kuj sib txawv heev rau kev ua thiab siv cov lus qhia sib txawv siv lead ua, yog li kev siv kuj txawv. Feem ntau, sapphire substrates muaj nyob rau hauv C, R, A thiab M dav hlau cov lus qhia.
Daim ntawv thov ntawmC-plane sapphire wafer
Gallium nitride (GaN) raws li qhov dav bandgap thib peb tiam semiconductor, muaj qhov sib txawv ncaj nraim, muaj zog atomic daim ntawv cog lus, siab thermal conductivity, zoo tshuaj stability (yuav luag tsis corroded los ntawm tej acid) thiab muaj zog tiv thaiv irradiation muaj peev xwm, thiab muaj broad zeem muag nyob rau hauv daim ntawv thov ntawm optoelectronics, siab kub thiab fais fab khoom siv thiab cov khoom siv microwave ntau zaus. Txawm li cas los xij, vim qhov siab melting point ntawm GaN, nws yog ib qho nyuaj kom tau txais cov ntaub ntawv loj-loj ib qho siv lead ua, yog li txoj hauv kev yog nqa tawm heteroepitaxy kev loj hlob ntawm lwm cov substrates, uas muaj cov kev xav tau ntau dua rau cov ntaub ntawv substrate.
Piv nrog rausapphire substratenrog rau lwm yam siv lead ua ntsej muag, lub lattice tas li tsis sib haum xeeb ntawm C-plane (<0001> orientation) sapphire wafer thiab cov yeeb yaj kiab tso rau hauv pawg Ⅲ-Ⅴ thiab Ⅱ-Ⅵ (xws li GaN) kuj me me, thiab cov lattice tsis sib haum. tus nqi nruab nrab ntawm ob thiab tusAlN filmsuas tuaj yeem siv los ua cov txheej txheem tsis yog txawm tias me dua, thiab nws ua tau raws li qhov yuav tsum tau muaj ntawm qhov kub thiab txias nyob rau hauv cov txheej txheem GaN crystallization. Yog li ntawd, nws yog cov khoom siv substrate rau GaN kev loj hlob, uas tuaj yeem siv los ua cov xim dawb / xiav / ntsuab, laser diodes, infrared detectors thiab lwm yam.
Nws yog ib qho tsim nyog hais tias GaN zaj duab xis loj hlob ntawm C-plane sapphire substrate hlob raws nws cov polar axis, uas yog, cov kev taw qhia ntawm C-axis, uas tsis yog tsuas yog cov txheej txheem loj hlob thiab cov txheej txheem epitaxy, tus nqi qis, lub cev ruaj khov. thiab cov khoom siv tshuaj lom neeg, tab sis kuj ua haujlwm zoo dua. Cov atoms ntawm C-oriented sapphire wafer yog sib koom ua ke hauv O-al-al-o-al-O kev npaj, thaum M-oriented thiab A-oriented sapphire crystals yog sib koom ua ke hauv al-O-al-O. Vim tias Al-Al muaj zog sib txuas qis thiab kev sib txuas tsis muaj zog dua li Al-O, piv nrog M-oriented thiab A-oriented sapphire crystals, Kev ua ntawm C-sapphire feem ntau yog qhib Al-Al yuam sij, uas yooj yim rau kev ua. , thiab tuaj yeem tau txais qhov zoo dua saum npoo, thiab tom qab ntawd tau txais cov khoom zoo dua gallium nitride epitaxial zoo, uas tuaj yeem txhim kho qhov zoo ntawm ultra-siab brightness dawb / xiav LED. Ntawm qhov tod tes, cov yeeb yaj kiab loj hlob raws C-axis muaj cov teebmeem tshwm sim thiab piezoelectric polarization, uas ua rau muaj zog sab hauv hluav taws xob hauv cov yeeb yaj kiab (qhib txheej quantum Wells), uas txo cov luminous efficiency ntawm GaN films.
A-plane sapphire waferdaim ntawv thov
Vim nws txoj kev ua tau zoo heev, tshwj xeeb tshaj yog kev xa tawm zoo heev, sapphire ib leeg siv lead ua tuaj yeem txhim kho cov nyhuv infrared nkag mus, thiab dhau los ua ib qho khoom siv zoo tshaj plaws nruab nrab-infrared qhov rais, uas tau siv dav hauv cov khoom siv tub rog photoelectric. Qhov twg A sapphire yog ib tug polar dav hlau (C dav hlau) nyob rau hauv ib txwm coj ntawm lub ntsej muag, yog ib tug uas tsis yog-polar nto. Feem ntau, qhov zoo ntawm A-oriented sapphire siv lead ua yog zoo dua li ntawm C-oriented siv lead ua, nrog tsawg dislocation, tsawg Mosaic qauv thiab ntau tiav siv lead ua qauv, yog li nws muaj zoo dua lub teeb kis tau tus mob. Nyob rau tib lub sijhawm, vim Al-O-Al-O atomic bonding hom ntawm lub dav hlau a, qhov hardness thiab hnav tsis kam ntawm A-oriented sapphire yog qhov siab dua li ntawm C-oriented sapphire. Yog li ntawd, A-directional chips feem ntau yog siv los ua cov ntaub ntawv qhov rais; Tsis tas li ntawd, A sapphire kuj muaj cov khoom siv hluav taws xob tsis tu ncua thiab cov khoom siv hluav taws xob siab, yog li nws tuaj yeem siv rau hybrid microelectronics thev naus laus zis, tab sis kuj rau kev loj hlob ntawm cov neeg ua haujlwm zoo, xws li kev siv TlBaCaCuO (TbBaCaCuO), Tl-2212, kev loj hlob. ntawm heterogeneous epitaxial superconducting films ntawm cerium oxide (CeO2) sapphire composite substrate. Txawm li cas los xij, kuj vim yog lub zog loj ntawm Al-O, nws nyuaj rau kev ua haujlwm ntau dua.
Daim ntawv thov ntawmR / M dav hlau sapphire wafer
R-dav hlau yog qhov tsis-polar nto ntawm sapphire, yog li qhov kev hloov ntawm R-dav hlau txoj hauj lwm nyob rau hauv ib tug sapphire ntaus ntawv muab nws txawv mechanical, thermal, hluav taws xob, thiab kho qhov muag khoom. Feem ntau, R-surface sapphire substrate yog nyiam rau heteroepitaxial deposition ntawm silicon, feem ntau yog rau semiconductor, microwave thiab microelectronics integrated circuit daim ntaub ntawv, nyob rau hauv zus tau tej cov txhuas, lwm yam superconducting Cheebtsam, siab resistors, gallium arsenide kuj siv tau rau R- hom substrate kev loj hlob. Tam sim no, nrog lub koob npe nrov ntawm cov xov tooj ntse thiab ntsiav tshuaj lub tshuab computer, R-face sapphire substrate tau hloov cov khoom siv SAW uas twb muaj lawm siv rau cov xov tooj ntse thiab ntsiav tshuaj computers, muab lub substrate rau cov khoom siv uas tuaj yeem txhim kho kev ua tau zoo.
Yog tias muaj kev ua txhaum cai, hu rau rho tawm
Post lub sij hawm: Lub Xya hli ntuj-16-2024