Sapphire yog ib qho siv lead ua ntawm alumina, belongs rau lub tripartite crystal system, hexagonal qauv, nws cov qauv siv lead ua yog tsim los ntawm peb cov pa oxygen atoms thiab ob lub txhuas atoms hauv covalent daim ntawv cog lus, npaj zoo heev, muaj zog sib txuas cov saw thiab lattice zog, thaum nws siv lead ua sab hauv yuav luag tsis muaj impurities los yog tsis xws luag, yog li nws muaj zoo heev hluav taws xob rwb thaiv tsev, transparency thiab zoo rig yam ntxwv. Dav siv los ua qhov rais kho qhov muag thiab cov ntaub ntawv ua haujlwm siab. Txawm li cas los xij, cov qauv molecular ntawm sapphire yog qhov nyuaj thiab muaj anisotropy, thiab qhov cuam tshuam ntawm cov khoom siv lub cev kuj sib txawv heev rau kev ua thiab siv cov lus qhia sib txawv siv lead ua, yog li kev siv kuj txawv. Feem ntau, sapphire substrates muaj nyob rau hauv C, R, A thiab M dav hlau cov lus qhia.
Daim ntawv thov ntawmC-plane sapphire wafer
Gallium nitride (GaN) raws li qhov dav bandgap thib peb tiam semiconductor, muaj qhov sib txawv ncaj qha, muaj zog atomic daim ntawv cog lus, siab thermal conductivity, zoo tshuaj stability (yuav luag tsis corroded los ntawm tej kua qaub) thiab muaj zog los tiv thaiv irradiation muaj peev xwm, thiab muaj broad zeem muag nyob rau hauv daim ntawv thov ntawm optoelectronics, kub thiab fais fab microwave li thiab frequencies. Txawm li cas los xij, vim qhov siab melting point ntawm GaN, nws yog ib qho nyuaj kom tau txais cov ntaub ntawv loj-loj ib qho siv lead ua, yog li txoj hauv kev yog nqa tawm heteroepitaxy kev loj hlob ntawm lwm cov substrates, uas muaj cov kev xav tau ntau dua rau cov ntaub ntawv substrate.
Piv nrog rausapphire substratenrog rau lwm yam siv lead ua ntsej muag, lub lattice tas li tsis sib haum xeeb tus nqi ntawm C-plane (<0001> orientation) sapphire wafer thiab cov yeeb yaj kiab tso rau hauv pawg Ⅲ-Ⅴ thiab Ⅱ-Ⅵ (xws li GaN) kuj me me, thiab cov lattice tas li tsis sib haum xeeb ntawm ob thiabAlN filmsuas tuaj yeem siv los ua cov txheej txheem tsis yog txawm tias me dua, thiab nws ua tau raws li qhov yuav tsum tau muaj ntawm qhov kub thiab txias nyob rau hauv cov txheej txheem GaN crystallization. Yog li ntawd, nws yog cov khoom siv substrate rau GaN kev loj hlob, uas tuaj yeem siv los ua cov xim dawb / xiav / ntsuab, laser diodes, infrared detectors thiab lwm yam.
Nws tsim nyog hais tias GaN zaj duab xis loj hlob ntawm C-plane sapphire substrate loj hlob raws nws cov polar axis, uas yog, cov kev taw qhia ntawm C-axis, uas tsis yog tsuas yog cov txheej txheem loj hlob thiab epitaxy txheej txheem, tus nqi qis, ruaj khov lub cev thiab tshuaj lom neeg, tab sis kuj ua haujlwm zoo dua. Cov atoms ntawm C-oriented sapphire wafer yog sib koom ua ke hauv O-al-al-o-al-O kev npaj, thaum M-oriented thiab A-oriented sapphire crystals yog sib koom ua ke hauv al-O-al-O. Vim tias Al-Al muaj zog sib txuas thiab tsis muaj zog dua li Al-O, piv nrog M-oriented thiab A-oriented sapphire crystals, kev ua ntawm C-sapphire yog tsuas yog qhib lub Al-Al yuam sij, uas yooj yim rau txheej txheem, thiab tuaj yeem tau txais cov khoom zoo dua qub, thiab tom qab ntawd tau zoo dua gallium nitride epitaxial zoo, uas tuaj yeem txhim kho qhov zoo nkauj ntawm LED. Ntawm qhov tod tes, cov yeeb yaj kiab loj hlob raws C-axis muaj cov teebmeem tshwm sim thiab piezoelectric polarization, uas ua rau muaj zog sab hauv hluav taws xob hauv cov yeeb yaj kiab (qhib txheej quantum Wells), uas txo cov luminous efficiency ntawm GaN films.
A-plane sapphire waferdaim ntawv thov
Vim nws txoj kev ua tau zoo heev, tshwj xeeb tshaj yog kev xa tawm zoo heev, sapphire ib leeg siv lead ua tuaj yeem txhim kho cov nyhuv infrared nkag mus, thiab dhau los ua ib qho khoom siv zoo tshaj plaws nruab nrab-infrared qhov rais, uas tau siv dav hauv cov khoom siv tub rog photoelectric. Qhov twg A sapphire yog ib tug polar dav hlau (C dav hlau) nyob rau hauv ib txwm kev coj ntawm lub ntsej muag, yog ib tug uas tsis yog-polar nto. Feem ntau, qhov zoo ntawm A-oriented sapphire siv lead ua yog zoo dua li ntawm C-oriented siv lead ua, nrog tsawg dislocation, tsawg Mosaic qauv thiab ntau tiav siv lead ua qauv, yog li nws muaj zoo dua lub teeb kis tau tus mob. Nyob rau tib lub sijhawm, vim Al-O-Al-O atomic bonding hom ntawm lub dav hlau a, qhov hardness thiab hnav tsis kam ntawm A-oriented sapphire yog qhov siab dua li ntawm C-oriented sapphire. Yog li ntawd, A-directional chips feem ntau yog siv los ua cov ntaub ntawv qhov rais; Tsis tas li ntawd, A sapphire kuj tseem muaj cov khoom siv hluav taws xob tsis tu ncua thiab cov rwb thaiv tsev siab, yog li nws tuaj yeem siv rau hybrid microelectronics thev naus laus zis, tab sis kuj rau kev loj hlob ntawm cov neeg siv hluav taws xob zoo, xws li kev siv TlBaCaCuO (TbBaCaCuO), Tl-2212, kev loj hlob ntawm heterogeneous epitaxial superconducting oxides ntawm ceremonium oxides. substrate. Txawm li cas los xij, kuj vim yog lub zog loj ntawm Al-O, nws nyuaj rau kev ua haujlwm ntau dua.
Daim ntawv thov ntawmR / M dav hlau sapphire wafer
R-dav hlau yog qhov tsis-polar nto ntawm sapphire, yog li qhov kev hloov ntawm R-dav hlau txoj hauj lwm nyob rau hauv ib tug sapphire ntaus ntawv muab nws txawv mechanical, thermal, hluav taws xob, thiab kho qhov muag khoom. Feem ntau, R-nto sapphire substrate yog nyiam rau heteroepitaxial deposition ntawm silicon, feem ntau yog rau semiconductor, microwave thiab microelectronics integrated circuit applications, nyob rau hauv zus tau tej cov txhuas, lwm yam superconducting Cheebtsam, siab resistors, gallium arsenide kuj yuav siv tau rau R-hom substrate kev loj hlob. Tam sim no, nrog lub koob npe nrov ntawm cov xov tooj ntse thiab ntsiav tshuaj lub tshuab computer, R-face sapphire substrate tau hloov cov khoom siv SAW uas twb muaj lawm siv rau cov xov tooj ntse thiab ntsiav tshuaj computers, muab lub substrate rau cov khoom siv uas tuaj yeem txhim kho kev ua tau zoo.
Yog tias muaj kev ua txhaum cai, hu rau rho tawm
Post lub sij hawm: Lub Xya hli ntuj-16-2024