Electrode Sapphire Substrate thiab Wafer C-plane LED Substrates

Lus piav qhia luv luv:

Raws li kev txhim kho txuas ntxiv ntawm sapphire thev naus laus zis thiab kev nthuav dav sai ntawm daim ntawv thov kev lag luam, 4 nti thiab 6 nti substrate wafers yuav tau txais ntau dua los ntawm cov tuam txhab chips tseem ceeb vim lawv qhov txiaj ntsig zoo hauv kev siv ntau lawm.


Product Detail

Khoom cim npe

Specification

GENERAL

Tshuaj Formula

Al2O3

Crystal Stucture

Hexagonal System (hk o 1)

Unit Cell Dimension

a = 4.758 Å, Å c = 12.991 Å, c: a = 2.730

PHEM

 

Metric

Lus Askiv (Imperial)

Qhov ntom

3.98g / hli

0.144 lb/in 3

Hardness

1525-2000 Knoop, 9 mhos

3700 ° F

Melting Point

2310 K (2040 ° C)

 

SRUCTURAL

Tensile zog

275 MPa rau 400 MPa

40,000 rau 58,000 psi

Tensile zog ntawm 20 ° C

 

58,000 psi (tsim min.)

Tensile zog ntawm 500 ° C

 

40,000 psi (tsim min.)

Tensile zog ntawm 1000 ° C

355 MPa rau

52,000 psi (tsim min.)

Flexural zog

480 MPa rau 895 MPa

70,000 rau 130,000 psi

Compression zog

2.0 GPa (qhov kawg)

300,000 psi (qhov kawg)

Sapphire raws li ib tug semiconductor Circuit Court substrate

Nyias sapphire wafers yog thawj zaug siv tau zoo ntawm cov khoom siv insulating uas silicon tau muab tso rau hauv kev sib xyaw ua ke hu ua silicon ntawm sapphire (SOS).Ntxiv rau nws cov khoom siv hluav taws xob zoo heev, sapphire muaj cov thermal conductivity.CMOS chips ntawm sapphire tshwj xeeb tshaj yog tsim rau cov xov tooj cua siv hluav taws xob ntau zaus (RF) xws li xov tooj ntawm tes, xov tooj cua kev nyab xeeb rau pej xeem thiab satellite kev sib txuas lus.

Ib leeg siv lead ua sapphire wafers kuj tseem siv los ua cov substrates hauv kev lag luam semiconductor rau kev loj hlob gallium nitride (GaN) raws li cov khoom siv.Kev siv sapphire txo cov nqi raws li nws yog kwv yees li 1/7th tus nqi ntawm germanium.GaN ntawm sapphire feem ntau yog siv hauv xiav lub teeb emitting diodes (LEDs).

Siv ua cov khoom siv qhov rais

Synthetic sapphire (qee zaum hu ua sapphire iav) feem ntau yog siv los ua cov khoom siv qhov rais vim tias nws yog pob tshab ntawm 150 nm (ultraviolet) thiab 5500 nm (infrared) wavelengths ntawm lub teeb (qhov pom spectrum li ntawm 380 nm txog 750 nm) thiab muaj kev tiv thaiv siab heev rau khawb.Cov txiaj ntsig tseem ceeb ntawm sapphire windows

suav nrog

Tsis tshua muaj dav optical kis bandwidth, los ntawm UV mus rau ze-infrared teeb

Muaj zog dua lwm yam khoom siv kho qhov muag lossis lub qhov rais iav

Kev tiv thaiv zoo heev rau khawb thiab puas (ntxuav hardness ntawm 9 ntawm Mohs nplai, thib ob tsuas yog pob zeb diamond thiab moissanite ntawm cov khoom ntuj).

Kub melting point (2030 ° C)

Daim duab qhia ntxaws

Electrode Sapphire Substrate thiab Wafer (1)
Electrode Sapphire Substrate thiab Wafer (2)

  • Yav dhau los:
  • Tom ntej:

  • Sau koj cov lus ntawm no thiab xa tuaj rau peb