p-hom 4H / 6H-P 3C-N HOM SIC substrate 4inch 〈111〉 ± 0.5 ° Zero MPD

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P-hom 4H / 6H-P 3C-N hom SiC substrate, 4-nti nrog 〈111〉 ± 0.5 ° kev taw qhia thiab Zero MPD (Micro Pipe Defect) qib, yog cov khoom siv hluav taws xob ua tau zoo tsim los rau cov khoom siv hluav taws xob siab heev kev tsim khoom. Paub txog nws cov thermal conductivity zoo heev, siab tawg voltage, thiab muaj zog tiv taus kub thiab corrosion, lub substrate no zoo tagnrho rau lub hwj chim electronics thiab RF daim ntaub ntawv. Zero MPD qib lav qhov tsis xws luag, ua kom muaj kev ntseeg siab thiab ruaj khov hauv cov khoom siv ua haujlwm siab. Nws qhov tseeb 〈111〉 ± 0.5 ° kev taw qhia tso cai rau kev sib raug zoo thaum lub sijhawm tsim khoom, ua rau nws tsim nyog rau kev tsim khoom loj. Cov substrate no yog siv dav hauv high-temperature, high-voltage, thiab high-frequency electronic devices, xws li fais fab converters, inverters, thiab RF Cheebtsam.

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4H/6H-P Hom SiC Composite Substrates Common parameter table

4 inch diam siliconCarbide (SiC) substrate Specification

Qib			Zero MPD Production Qib (Z Qib)	Txuj ntau lawm Qib (P Qib)	Dummy Qib (D Qib)
Txoj kab uas hla			99.5mm ~ 100.0 hli
Thickness			350 μm ± 25 μm
Wafer Orientation			Tawm axis: 2.0 ° -4.0 ° mus rau [112(-)0] ± 0.5 ° rau 4H / 6H-P, On axis: 〈111〉 ± 0.5 ° rau 3C-N
Micropipe ntom ntom			0 cm-2
Kev tiv thaiv	p-type 4H/6H-P		≤0.1 Ωꞏcm		≤0.3 Ωꞏcm
	N-type 3C-N		≤ 0.8 mΩ ꞏcm		≤1m Ωꞏcm
Thawj Txoj Kev Ncaj Ncees		4H/6H-P	- {1010} ± 5.0°
		3 C-N	- {110} ± 5.0°
Qhov Loj Loj Loj			32.5 hli ± 2.0 hli
Secondary Flat Length			18.0 hli ± 2.0 hli
Secondary Flat Orientation			Silicon lub ntsej muag: 90 ° CW. los ntawm Prime flat±5.0° Nws
Ntug Exclusion			3 hli		6 hli
LTV/TTV/How/Warp			≤ 2.5 μm / ≤5 μm / ≤15 μm / ≤30 ua m		≤10 μm / ≤15 μm / ≤25 μm / ≤40 ua m
Roughness			Polish Ra≤1nm
			CMP Ra≤0.2nm		Ra≤0.5nm
Ntug Cracks Los ntawm High Intensity Light			Tsis muaj		Qhov ntev ≤ 10 hli, ib qhov ntev ≤ 2 hli
Hex Phaj Los Ntawm Lub Teeb Siab Siab			Thaj tsam ≤ 0.05%		Cov cheeb tsam sib sau ≤0.1%
Polytype Areas Los Ntawm Lub Teeb Siab Siab			Tsis muaj		Thaj tsam ≤ 3%
Visual Carbon suav nrog			Thaj tsam ≤ 0.05%		Qhov loj me ≤ 3%
Silicon Surface Scratches Los ntawm High Intensity Light			Tsis muaj		Qhov ntev ≤1 × wafer txoj kab uas hla
Ntug Chips Siab Los Ntawm Kev Siv Lub Teeb			Tsis muaj kev tso cai ≥0.2mm dav thiab qhov tob		5 tso cai, ≤1mm txhua
Silicon Surface Contamination Los Ntawm Kev Siv Siab			Tsis muaj
Ntim			Multi-wafer Cassette lossis Ib Lub Thawv Wafer

Nco tseg:

※ Cov kev txwv tsis raug siv rau tag nrho wafer nto tsuas yog rau thaj tsam ntawm ntug kev cais tawm. # Cov khawb yuav tsum tau kuaj xyuas ntawm Si ntsej muag nkaus xwb.

P-hom 4H / 6H-P 3C-N hom 4-nti SiC substrate nrog 〈111〉 ± 0.5 ° kev taw qhia thiab Zero MPD qib yog siv dav hauv kev siv hluav taws xob ua haujlwm siab. Nws zoo heev thermal conductivity thiab high breakdown voltage ua rau nws zoo tagnrho rau lub hwj chim electronics, xws li high-voltage switches, inverters, thiab lub hwj chim converters, ua hauj lwm nyob rau hauv huab mob. Tsis tas li ntawd, lub substrate tsis kam mus rau qhov kub thiab txias thiab corrosion ua kom ruaj khov kev ua haujlwm nyob rau hauv ib puag ncig hnyav. Qhov tseeb 〈111〉 ± 0.5 ° kev taw qhia txhim kho kev tsim khoom raug, ua rau nws tsim nyog rau cov khoom siv RF thiab kev siv ntau zaus, xws li radar systems thiab cov khoom siv sib txuas lus wireless.

Qhov zoo ntawm N-hom SiC composite substrates suav nrog:

1. High Thermal Conductivity: Ua kom muaj cua sov ua kom zoo, ua kom haum rau qhov kub thiab txias thiab kev siv hluav taws xob siab.
2. High Breakdown Voltage: Ua kom ntseeg tau qhov kev ua tau zoo hauv kev siv hluav taws xob siab xws li lub zog hloov hluav taws xob thiab cov inverter.
3. Zero MPD (Micro Pipe Defect) Qib: Ua kom muaj qhov tsis xws luag, muab kev ruaj ntseg thiab kev ntseeg siab hauv cov khoom siv hluav taws xob tseem ceeb.
4. Corrosion Resistance: Durable nyob rau hauv ib puag ncig hnyav, ua kom muaj kev ua haujlwm ntev hauv kev xav tau.
5. Precise 〈111〉 ± 0.5 ° Kev taw qhia: Tso cai rau kev sib raug zoo thaum lub sijhawm tsim khoom, txhim kho kev ua haujlwm ntawm cov khoom siv hauv high-frequency thiab RF daim ntaub ntawv.

Zuag qhia tag nrho, P-hom 4H / 6H-P 3C-N hom 4-nti SiC substrate nrog 〈111〉 ± 0.5 ° kev taw qhia thiab Zero MPD qib yog cov khoom siv ua haujlwm siab zoo rau kev siv hluav taws xob siab heev. Nws zoo heev thermal conductivity thiab high breakdown voltage ua rau nws zoo meej rau lub hwj chim electronics xws li high-voltage keyboards, inverters, thiab converters. Zero MPD qib ua kom muaj qhov tsis xws luag, muab kev ntseeg siab thiab ruaj khov hauv cov khoom siv tseem ceeb. Tsis tas li ntawd, lub substrate tsis kam tiv thaiv corrosion thiab kub kub kom ruaj khov nyob rau hauv ib puag ncig hnyav. Qhov tseeb 〈111〉 ± 0.5 ° kev taw qhia tso cai rau kev sib raug zoo thaum lub sijhawm tsim khoom, ua rau nws tsim nyog rau cov khoom siv RF thiab kev siv ntau zaus.