P-hom SiC substrate SiC wafer Dia2inch khoom tshiab

P-hom SiC substrate SiC wafer Dia2inch tshiab khoom Featured duab

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2 nti P-Type Silicon Carbide (SiC) Wafer hauv 4H lossis 6H polytype. Nws muaj cov khoom zoo xws li N-type Silicon Carbide (SiC) wafer, xws li kub tsis kam, siab thermal conductivity, siab hluav taws xob conductivity, thiab lwm yam. P-type SiC substrate feem ntau yog siv rau kev tsim khoom siv hluav taws xob, tshwj xeeb tshaj yog kev tsim khoom ntawm Insulated. Rooj vag Bipolar Transistors (IGBT). Tus tsim ntawm IGBT feem ntau koom nrog PN junctions, qhov twg P-hom SiC tuaj yeem ua tau zoo rau kev tswj tus cwj pwm ntawm cov khoom siv.

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P-hom silicon carbide substrates feem ntau yog siv los ua cov khoom siv fais fab, xws li Insulate-Gate Bipolar transistors (IGBTs).

IGBT = MOSFET + BJT, uas yog ib qho kev hloov pauv. MOSFET = IGFET (hlau oxide semiconductor field effect tube, lossis insulated gate type field effect transistor). BJT (Bipolar Junction Transistor, tseem hu ua transistor), bipolar txhais tau hais tias muaj ob hom hluav taws xob thiab qhov sib koom ua ke hauv cov txheej txheem kev ua haujlwm ntawm kev ua haujlwm, feem ntau muaj PN hlws ris koom nrog hauv kev coj ua.

2-nti p-hom silicon carbide (SiC) wafer yog nyob rau hauv 4H lossis 6H polytype. Nws muaj cov khoom zoo sib xws rau n-hom silicon carbide (SiC) wafers, xws li kub tsis kam, siab thermal conductivity, thiab siab hluav taws xob conductivity. p-hom SiC substrates feem ntau yog siv rau hauv kev tsim cov khoom siv hluav taws xob, tshwj xeeb tshaj yog rau kev tsim cov khoom siv hluav taws xob-qhov rooj bipolar transistors (IGBTs). tus tsim ntawm IGBTs feem ntau koom nrog PN junctions, qhov twg p-hom SiC yog qhov zoo rau kev tswj tus cwj pwm ntawm cov cuab yeej.