P-hom SiC wafer 4H / 6H-P 3C-N 6inch thickness 350 μm nrog Primary Flat Orientation

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P-hom SiC wafer, 4H / 6H-P 3C-N, yog 6-nti semiconductor khoom nrog lub thickness ntawm 350 μm thiab thawj qhov chaw tiaj tus, tsim rau kev siv hluav taws xob siab heev. Paub txog nws cov thermal conductivity, siab tawg voltage, thiab tsis kam mus rau huab cua kub thiab corrosive ib puag ncig, qhov wafer no yog tsim rau cov khoom siv hluav taws xob ua haujlwm siab. P-hom doping qhia txog qhov ua tus thawj coj thauj khoom, ua rau nws zoo tagnrho rau kev siv hluav taws xob hluav taws xob thiab RF. Nws cov qauv ruaj khov ua kom ruaj khov ua haujlwm nyob rau hauv high-voltage thiab high-frequency tej yam kev mob, ua rau nws zoo haum rau cov khoom siv hluav taws xob, hluav taws xob kub kub, thiab kev hloov hluav taws xob siab. Lub hauv paus tiaj tiaj ua kom muaj kev sib raug zoo hauv cov txheej txheem tsim khoom, muab cov khoom sib xws hauv kev tsim khoom.

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Specification4H / 6H-P Hom SiC Composite Substrates Cov lus sib piv

6 inch diameter Silicon Carbide (SiC) Substrate Specification

Qib			Zero MPD ProductionQib (Z Qib)	Txuj ntau lawmQib (P Qib)	Dummy Qib (D Qib)
Txoj kab uas hla			145.5mm ~ 150.0 hli
Thickness			350 μm ± 25 μm
Wafer Orientation			-Offaxis: 2.0 ° -4.0 ° rau [1120] ± 0.5 ° rau 4H / 6H-P, On axis: 〈111〉 ± 0.5 ° rau 3C-N
Micropipe ntom ntom			0 cm-2
Kev tiv thaiv	p-type 4H/6H-P		≤0.1 Ωꞏcm		≤0.3 Ωꞏcm
	N-type 3C-N		≤ 0.8 mΩ ꞏcm		≤1m Ωꞏcm
Thawj Txoj Kev Ncaj Ncees		4H/6H-P	-{1010} ± 5.0°
		3 C-N	-{110} ± 5.0°
Qhov Loj Loj Loj			32.5 hli ± 2.0 hli
Secondary Flat Length			18.0 hli ± 2.0 hli
Secondary Flat Orientation			Silicon lub ntsej muag: 90 ° CW. los ntawm Prime tiaj tus ± 5.0 °
Ntug Exclusion			3 hli		6 hli
LTV/TTV/How/Warp			≤ 2.5 μm / ≤5 μm / ≤ 15 μm / ≤ 30 μm		≤ 10 μm / ≤ 15 μm / ≤ 25 μm / ≤ 40 μm
Roughness			Polish Ra≤1nm
			CMP Ra≤0.2nm		Ra≤0.5nm
Ntug Cracks Los ntawm High Intensity Light			Tsis muaj		Qhov ntev ≤ 10 hli, ib qhov ntev ≤ 2 hli
Hex Phaj Los Ntawm Lub Teeb Siab Siab			Thaj tsam ≤ 0.05%		Cov cheeb tsam sib sau ≤0.1%
Polytype Areas Los Ntawm Lub Teeb Siab Siab			Tsis muaj		Thaj tsam ≤ 3%
Visual Carbon suav nrog			Thaj tsam ≤ 0.05%		Qhov loj me ≤ 3%
Silicon Surface Scratches Los ntawm High Intensity Light			Tsis muaj		Qhov ntev ≤1 × wafer txoj kab uas hla
Ntug Chips Siab Los Ntawm Kev Siv Lub Teeb			Tsis muaj kev tso cai ≥0.2mm dav thiab qhov tob		5 tso cai, ≤1mm txhua
Silicon Surface Contamination Los Ntawm Kev Siv Siab			Tsis muaj
Ntim			Multi-wafer Cassette lossis Ib Lub Thawv Wafer

Nco tseg:

※ Cov kev txwv tsis raug siv rau tag nrho wafer nto tsuas yog rau thaj tsam ntawm ntug kev cais tawm. # Cov khawb yuav tsum tau kuaj xyuas ntawm Si ntsej muag o

P-hom SiC wafer, 4H / 6H-P 3C-N, nrog nws qhov loj 6-nti thiab 350 μm tuab, ua lub luag haujlwm tseem ceeb hauv kev tsim khoom ntawm cov khoom siv hluav taws xob ua haujlwm siab. Nws zoo heev thermal conductivity thiab siab tawg voltage ua rau nws zoo tagnrho rau kev tsim khoom xws li fais fab hloov, diodes, thiab transistors siv nyob rau hauv high-kub ib puag ncig xws li hluav taws xob tsheb, hluav taws xob daim phiaj, thiab lub zog tauj dua tshiab. Lub wafer lub peev xwm los ua haujlwm tau zoo hauv cov xwm txheej hnyav ua kom ntseeg tau tias kev ua haujlwm zoo hauv kev lag luam siv yuav tsum muaj lub zog ceev thiab lub zog ua haujlwm. Tsis tas li ntawd, nws cov kev taw qhia ncaj nraim hauv kev sib raug zoo meej thaum lub sij hawm tsim khoom, txhim kho kev tsim khoom thiab cov khoom sib xws.

Qhov zoo ntawm N-hom SiC composite substrates suav nrog

High Thermal conductivity: P-hom SiC wafers zoo dissipate cua sov, ua rau lawv zoo tagnrho rau cov ntawv thov kub.
High Breakdown Voltage: Muaj peev xwm tiv taus cov hluav taws xob siab, ua kom muaj kev ntseeg siab hauv cov hluav taws xob hluav taws xob thiab cov khoom siv hluav taws xob siab.
Kev Ua Phem Rau Ib puag ncig hnyav: Zoo heev durability nyob rau hauv huab mob, xws li kub kub thiab corrosive ib puag ncig.
Fais fab hloov dua siab tshiab: P-hom doping ua kom yooj yim zog tuav, ua rau lub wafer haum rau lub zog hloov dua siab tshiab.
Thawj Txoj Kev Ncaj Ncees: Ua kom muaj kev sib raug zoo hauv kev tsim khoom, txhim kho cov khoom raug thiab sib xws.
Nyias Structure (350 μm): Lub wafer qhov pom zoo thickness txhawb kev koom ua ke rau hauv cov khoom siv hluav taws xob siab heev, qhov chaw txwv tsis pub siv.

Zuag qhia tag nrho, P-hom SiC wafer, 4H / 6H-P 3C-N, muaj ntau yam zoo uas ua rau nws tsim nyog rau kev lag luam thiab kev siv hluav taws xob. Nws cov thermal conductivity thiab tawg voltage pab txhim khu kev lag luam nyob rau hauv high-temperature thiab high-voltage ib puag ncig, thaum nws tsis kam mus rau hnyav tej yam kev mob ua kom durability. P-hom doping tso cai rau kev hloov hluav taws xob zoo, ua rau nws zoo tagnrho rau lub zog hluav taws xob thiab lub zog hluav taws xob. Tsis tas li ntawd, lub wafer lub hauv paus tiaj tus taw qhia kom meej meej thaum lub sijhawm tsim khoom, txhim kho cov khoom sib xws. Nrog ib tug tuab ntawm 350 μm, nws yog zoo-tsim rau kev koom ua ke rau hauv siab heev, compact li.