Cov khoom
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Nto ua txoj kev ntawm titanium-doped sapphire siv lead ua laser rods
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8inch 200mm Silicon Carbide SiC Wafers 4H-N hom Ntau lawm qib 500um thickness
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2 nti 6H-N Silicon Carbide Substrate Sic Wafer Ob Chav Polished Conductive Prime Qib Mos Qib
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200mm 8inch GaN ntawm sapphire Epi-txheej wafer substrate
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Sapphire raj KY Txoj kev txhua pob tshab Customizable
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6 Nti Conductive SiC Composite Substrate 4H Diameter 150mm Ra≤0.2nm Warp≤35μm
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Infrared Nanosecond Laser Drilling khoom rau iav Drilling thickness≤20mm
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Microjet laser tshuab cuab yeej wafer txiav SiC cov ntaub ntawv ua
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Silicon carbide pob zeb diamond hlau txiav tshuab 4/6/8/12 nti SiC ingot ua
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CVD txoj kev ua kom muaj siab purity SiC raw khoom hauv silicon carbide synthesis rauv ntawm 1600 ℃
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Silicon carbide kuj ntev siv lead ua rauv loj hlob 6/8/12inch nti SiC ingot siv lead ua PVT txoj kev
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Ob chav chaw nres tsheb square tshuab monocrystalline silicon pas nrig ua 6/8/12 nti nto flatness Ra≤0.5μm