Sapphire Ingot Growth Equipment Czochralski CZ Txoj Kev Ua 2inch-12inch Sapphire Wafers

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Sapphire Ingot Growth Equipment (Czochralski Method) yog ib qho kev txiav-ntug uas tsim los rau kev ua siab dawb huv, tsis muaj teeb meem sapphire ib leeg-crystal loj hlob. Czochralski (CZ) txoj kev ua kom muaj kev tswj xyuas meej ntawm cov noob siv lead ua rub ceev (0.5-5 mm / h), kev sib hloov (5-30 rpm), thiab kub gradients nyob rau hauv iridium crucible, ua axisymmetric crystals txog li 12 ntiv tes (300 mm) hauv txoj kab uas hla. Cov cuab yeej no txhawb nqa C / A-plane siv lead ua kev taw qhia tswj, ua kom muaj kev loj hlob ntawm optical-qib, hluav taws xob-qib, thiab doped sapphire (xws li Cr³⁺ ruby, Ti³⁺ hnub qub sapphire).

XKH muab cov kev daws teeb meem kawg-rau-kawg, suav nrog cov khoom siv kho kom haum (2-12-nti wafer ntau lawm), txheej txheem kev ua kom zoo (qhov tsis xws luag <100/cm²), thiab kev cob qhia, nrog rau cov zis txhua hli ntawm 5,000+ wafers rau cov ntawv thov xws li LED substrates, GaN epitaxy, thiab ntim khoom semiconduct.

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Txoj Cai Ua Haujlwm

Txoj kev CZ ua haujlwm los ntawm cov kauj ruam hauv qab no:
1. Melting Raw Materials: High-purity Al₂O₃ (purity>99.999%) yog melted nyob rau hauv ib tug iridium crucible ntawm 2050-2100 ° C.
2. Noob Crystal Introduction: Ib lub noob siv lead ua tau qis rau hauv cov yaj, ua raws li kev rub nrawm los ua ib lub caj dab (inch <1 mm) kom tshem tawm cov dislocations.
3. Lub xub pwg tsim thiab Loj Loj: Qhov rub nrawm yog txo mus rau 0.2–1 mm / h, maj mam nthuav cov siv lead ua txoj kab uas hla mus rau lub hom phiaj loj (xws li 4–12 ntiv tes).
4. Annealing thiab Cooling: Cov siv lead ua yog txias ntawm 0.1–0.5 ° C / min kom txo tau thermal stress-induced cracking.
5. Compatible Crystal Hom:
Electronic Qib: Semiconductor substrates (TTV <5 μm)
Optical Qib: UV laser qhov rais (transmittance> 90% @ 200 nm)
Doped Variants: Ruby (Cr³⁺ concentration 0.01–0.5 wt.%), xiav sapphire tubing

Core System Cheebtsam

1. Melting System
Iridium Crucible: Resistant mus rau 2300 ° C, corrosion-resistant, sib xws nrog loj melts (100-400 kg).
Induction Cua sov rauv: Ntau thaj chaw ywj pheej tswj qhov kub thiab txias (± 0.5 ° C), ua kom zoo thermal gradients.

2. Pulling thiab Rotation System
High-Precision Servo Tsav: rub kev daws teeb meem 0.01 mm / h, rotational concentricity <0.01 mm.
Sib Nqus Fluid Seal : Kev sib txuas tsis sib cuag rau kev loj hlob tsis tu ncua (> 72 teev).

3. Thermal Control System
PID Kaw-Loop Control : Kev hloov kho lub sijhawm tiag tiag (50-200 kW) kom ruaj khov rau qhov chaw thermal.
Inert Gas Protection : Ar/N₂ sib tov (99.999% purity) los tiv thaiv oxidation.

4. Automation thiab saib xyuas
CCD Diameter Monitoring : Kev tawm tswv yim tiag tiag (qhov tseeb ± 0.01 hli).
Infrared Thermography: Saib xyuas cov khoom-kua interface morphology.

CZ vs. KY Kev sib piv

Qhov Parameter	CZ Method	KY Method
Max. Crystal Size	12 nti (300mm)	400 hli (Pear-shaped ingot)
Defect Density	<100/cm²	<50/cm²
Kev loj hlob	0.5-5mm / h	0.1-2 hli / h
Kev siv hluav taws xob	50-80 kWh/kg	80-120 kWh/kg
Cov ntawv thov	LED substrates, GaN epitaxy	Optical windows, loj ingots
Nqis	Moderate (cov cuab yeej siv siab siab)	High (cov txheej txheem nyuaj)

Cov ntawv thov tseem ceeb

1. Semiconductor Kev Lag Luam
GaN Epitaxial Substrates: 2-8-nti wafers (TTV <10 μm) rau Micro-LEDs thiab laser diodes.
SOI Wafers: Nto roughness <0.2 nm rau 3D-integrated chips.

2. Optoelectronics
UV Laser Qhov rai: Nrog 200 W / cm² zog ceev rau lithography optics.
Infrared Cheebtsam: Absorption coefficient <10⁻³ cm⁻¹ rau thermal imaging.

3. Consumer Electronics
Lub koob yees duab smartphone npog: Mohs hardness 9, 10 × khawb kuj txhim kho.
Smartwatch Displays: Thickness 0.3-0.5 hli, transmittance> 92%.

4. Kev Tiv Thaiv thiab Aerospace
Nuclear Reactor Windows : Radiation kam rau siab txog 10¹⁶ n / cm².
High-Power Laser Mirrors : Thermal deformation <λ/20@1064 nm.

XKH's Services

1. Khoom siv Customization
Scalable Chamber Design : Φ200-400 mm configurations rau 2-12-nti wafer ntau lawm.
Doping Flexibility : Txhawb nqa lub ntiaj teb tsis tshua muaj (Er / Yb) thiab kev hloov pauv-hlau (Ti / Cr) doping rau cov khoom siv hluav taws xob zoo.

2. Xaus-rau-kawg txhawb nqa
Kev Ua Kom Zoo Tshaj Plaws: Cov zaub mov ua ntej validated (50+) rau LED, RF khoom, thiab cov khoom siv hluav taws xob-hardened.
Ntiaj teb no Kev Pabcuam Network : 24/7 tej thaj chaw deb kuaj mob thiab kev saib xyuas ntawm qhov chaw nrog 24-hli warranty.

3. Kev ua haujlwm hauv qab
Wafer Fabrication : Txiav, sib tsoo, thiab polishing rau 2-12-nti wafers (C / A-plane).
Cov khoom muaj nqis ntxiv:
Optical Cheebtsam: UV / IR windows (0.5-50 mm thickness).
Cov Khoom Muag Khoom Muag Khoom Muag: Cr³⁺ ruby (GIA-certified), Ti³⁺ hnub qub sapphire.

4. Kev ua thawj coj
Cov ntawv pov thawj: EMI-raws li wafers.
Patents: Core patents nyob rau hauv CZ txoj kev innovation.

Xaus

Cov cuab yeej siv CZ muab qhov loj-dimension compatibility, ultra-tsis muaj qhov tsis xws luag, thiab cov txheej txheem siab ruaj khov, ua rau nws qhov kev lag luam benchmark rau LED, semiconductor, thiab kev siv tiv thaiv. XKH muab kev txhawb nqa los ntawm cov khoom siv xa mus rau kev ua tiav tom qab kev loj hlob, ua rau cov neeg siv khoom ua tiav cov nqi tsim nyog, kev ua haujlwm siab sapphire siv lead ua.