Semi-Insulating SiC ntawm Si Composite Substrates
Cov khoom | Specification | Cov khoom | Specification |
Txoj kab uas hla | 150 ± 0.2 hli | Kev taw qhia | <111>/<100>/<110> thiab lwm yam |
Polytype | 4H | Hom | P/N |
Kev tiv thaiv | ≥1E8ohm·cm | Flatness | Flat / Notch |
Hloov txheej Thickness | ≥0.1μm | Ntug Chip, khawb, tawg (pom kev tshuaj xyuas) | Tsis muaj |
Tsis muaj | ≤5ea / wafer (2mm> D> 0.5mm) | TTV | ≤ 5μm |
Pem hauv ntej roughness | Ra≤0.2nm 5 * 5 * 5 hli | Thickness | 500/625/675 ± 25μm |
Qhov kev sib xyaw no muaj ntau qhov zoo hauv kev tsim khoom siv hluav taws xob:
Compatibility: Kev siv cov silicon substrate ua rau nws sib xws nrog cov txheej txheem silicon-raws li kev ua haujlwm thiab tso cai rau kev koom ua ke nrog cov txheej txheem tsim khoom semiconductor uas twb muaj lawm.
Kev ua haujlwm kub: SiC muaj cov thermal conductivity zoo heev thiab tuaj yeem ua haujlwm ntawm qhov kub thiab txias, ua rau nws tsim nyog rau kev siv hluav taws xob ntau thiab siv hluav taws xob ntau zaus.
High Breakdown Voltage: SiC cov ntaub ntawv muaj qhov hluav taws xob tawg siab thiab tuaj yeem tiv taus hluav taws xob siab yam tsis muaj hluav taws xob tawg.
Txo lub zog poob: SiC substrates tso cai rau kev hloov pauv hluav taws xob ntau dua thiab txo qis hluav taws xob hauv cov khoom siv hluav taws xob piv rau cov khoom siv silicon ib txwm muaj.
Wide bandwidth: SiC muaj qhov dav bandwidth, tso cai rau kev txhim kho cov khoom siv hluav taws xob uas tuaj yeem ua haujlwm ntawm qhov kub thiab txias dua.
Yog li semi-insulating SiC ntawm Si composite substrates sib xyaw ua ke ntawm silicon nrog cov khoom siv hluav taws xob zoo tshaj thiab thermal ntawm SiC, ua rau nws tsim nyog rau kev siv hluav taws xob ua haujlwm siab.
Packing thiab Delivery
1. Peb yuav siv cov yas tiv thaiv thiab customized boxed los ntim. (Cov khoom siv ib puag ncig tus phooj ywg)
2. Peb tuaj yeem ua raws li kev ntim khoom raws li qhov ntau.
3. DHL / Fedex / UPS Express feem ntau siv sijhawm li 3-7 hnub ua haujlwm rau qhov chaw.