SiC
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4H-N 8 nti SiC substrate wafer Silicon Carbide Dummy Tshawb fawb qib 500um thickness
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4H-N / 6H-N SiC Wafer Reeasearch ntau lawm Dummy qib Dia150mm Silicon carbide substrate
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12 nti SIC substrate silicon carbide prime qib txoj kab uas hla 300mm loj loj 4H-N Haum rau siab zog ntaus ntawv kub dissipation
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HPSI SiC wafer dia: 3inch thickness: 350um ± 25 µm rau fais fab Electronics
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8 nti SiC silicon carbide wafer 4H-N hom 0.5 hli ntau lawm qib kev tshawb fawb qib kev cai polished substrate
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3inch High purity Semi-Insulating (HPSI) SiC wafer 350um Dummy qib Prime qib
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P-hom SiC substrate SiC wafer Dia2inch khoom tshiab
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8inch 200mm Silicon Carbide SiC Wafers 4H-N hom Ntau lawm qib 500um thickness
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2 nti 6H-N Silicon Carbide Substrate Sic Wafer Ob Chav Polished Conductive Prime Qib Mos Qib
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3 nti High Purity (Undoped) Silicon Carbide Wafers semi-Insulating Sic Substrates (HPSl)
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Au coated wafer, sapphire wafer, silicon wafer, SiC wafer, 2 nti 4 nti 6 nti, Kub coated thickness 10nm 50nm 100nm
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SiC wafer 4H-N 6H-N HPSI 4H-semi 6H-semi 4H-P 6H-P 3C hom 2inch 3inch 4inch 6inch 8inch