SiC Ingot 4H hom Dia 4inch 6inch Thickness 5-10mm Kev Tshawb Fawb / Dummy Qib

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Silicon Carbide (SiC) tau tshwm sim los ua cov khoom tseem ceeb hauv kev siv hluav taws xob thiab optoelectronic vim nws cov hluav taws xob zoo tshaj, thermal, thiab cov khoom siv kho tshuab. 4H-SiC Ingot, muaj nyob rau hauv txoj kab uas hla ntawm 4-nti thiab 6-nti nrog lub thickness ntawm 5-10 hli, yog cov khoom siv hauv paus rau kev tshawb fawb thiab kev tsim kho lub hom phiaj lossis ua cov khoom siv qib dummy. Qhov ingot no yog tsim los muab cov kws tshawb fawb thiab cov chaw tsim khoom nrog cov khoom zoo SiC substrates haum rau kev tsim cov cuab yeej siv, kev sim kev tshawb fawb, lossis kev ntsuas thiab ntsuas cov txheej txheem. Nrog nws cov qauv siv lead ua hexagonal tshwj xeeb, 4H-SiC ingot muaj kev siv dav hauv hluav taws xob hluav taws xob, cov khoom siv ntau zaus, thiab cov tshuab hluav taws xob tiv thaiv hluav taws xob.

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1. Crystal Structure thiab Orientation
Polytype: 4H (hexagonal qauv)
Lattice Constants:
ib = 3,073 Å
c = 10.053 Å
Kev taw qhia: Feem ntau [0001] (C-plane), tab sis lwm yam kev taw qhia xws li [11\overline{2}0] (A-plane) kuj muaj raws li qhov kev thov.

2. Lub cev qhov ntev
Txoj kab uas hla:
Standard xaiv: 4 nti (100 mm) thiab 6 nti (150 mm)
Thickness:
Muaj nyob rau hauv thaj tsam ntawm 5-10 hli, customizable nyob ntawm daim ntawv thov.

3. Cov khoom siv hluav taws xob
Doping Hom: Muaj nyob rau hauv intrinsic (semi-insulating), n-hom (doped nrog nitrogen), los yog p-hom (doped nrog txhuas los yog boron).

4. Thermal thiab Mechanical Properties
Thermal conductivity: 3.5-4.9 W / cm · K ntawm chav tsev kub, ua kom muaj cua sov zoo heev.
Hardness: Mohs nplai 9, ua SiC thib ob tsuas yog pob zeb diamond hauv hardness.

Parameter	Paub meej	Chav tsev
Txoj Kev Loj Hlob	PVT (lub cev vapor thauj)
Txoj kab uas hla	50.8 ± 0.5 / 76.2 ± 0.5 / 100.0 ± 0.5 / 150 ± 0.5	mm
Polytype	4H / 6H (50.8 hli), 4H (76.2 hli, 100.0 hli, 150 hli)
Surface Orientation	0.0˚ / 4.0˚ / 8.0˚ ± 0.5˚ (50.8 mm), 4.0˚ ± 0.5˚ (lwm tus)	degree
Hom	N-type
Thickness	5-10/10-15 > 15	mm
Thawj Txoj Kev Ncaj Ncees	(10-10) ± 5.0˚	degree
Qhov Loj Loj Loj	15.9 ± 2.0 (50.8 mm), 22.0 ± 3.5 (76.2 mm), 32.5 ± 2.0 (100.0 mm), 47.5 ± 2.5 (150 mm)	mm
Secondary Flat Orientation	90˚ CCW los ntawm kev taw qhia ± 5.0˚	degree
Secondary Flat Length	8.0 ± 2.0 (50.8 mm), 11.2 ± 2.0 (76.2 mm), 18.0 ± 2.0 (100.0 mm), Tsis muaj (150 mm)	mm
Qib	Tshawb nrhiav / Dummy

Daim ntawv thov

1. Kev Tshawb Fawb thiab Kev Txhim Kho

Kev tshawb fawb-qib 4H-SiC ingot yog qhov zoo tagnrho rau kev kawm thiab kev lag luam lab tsom mus rau SiC-raws li kev tsim khoom siv. Nws cov crystalline zoo tshaj plaws ua rau muaj kev sim siab ntawm SiC cov khoom, xws li:
Cov kev tshawb fawb txog kev txav mus los.
Defect characterization thiab minimization cov txheej txheem.
Optimization ntawm cov txheej txheem kev loj hlob epitaxial.

2. Dummy Substrate
Lub dummy-qib ingot yog dav siv nyob rau hauv kev sim, calibration, thiab prototyping daim ntaub ntawv. Nws yog ib qho txiaj ntsig zoo rau lwm txoj hauv kev:
Cov txheej txheem parameter calibration hauv Chemical Vapor Deposition (CVD) lossis Lub Cev Vapor Deposition (PVD).
Kev ntsuas etching thiab polishing txheej txheem hauv kev tsim khoom.

3. Fais fab Electronics
Vim nws qhov dav bandgap thiab siab thermal conductivity, 4H-SiC yog lub hauv paus rau lub zog hluav taws xob, xws li:
High-voltage MOSFETs.
Schottky Barrier Diodes (SBDs).
Junction Field-Effect Transistors (JFETs).
Daim ntawv thov muaj xws li hluav taws xob tsheb inverters, hnub ci inverters, thiab daim phiaj ntse.

4. Cov khoom siv ntau zaus
Cov khoom siv hluav taws xob siab zog thiab tsis tshua muaj peev xwm ua rau nws haum rau:
Xov tooj cua zaus (RF) transistors.
Wireless kev sib txuas lus systems, suav nrog 5G infrastructure.
Aerospace thiab kev tiv thaiv daim ntawv thov xav tau radar systems.

5. Radiation-Resistant Systems
4H-SiC lub hauv paus tsis kam tiv thaiv hluav taws xob puas ua rau nws tseem tsis tau muaj nyob rau hauv ib puag ncig hnyav xws li:
Kev tshawb nrhiav chaw kho vajtse.
Nuclear fais fab nroj tsuag xyuas cov cuab yeej.
Cov tub rog-qib electronics.

6. Kev Siv Hluav Taws Xob
Raws li SiC thev naus laus zis nce qib, nws cov ntawv thov txuas ntxiv mus rau hauv thaj chaw xws li:
Photonics thiab quantum xam kev tshawb fawb.
Kev loj hlob ntawm high-power LEDs thiab UV sensors.
Kev koom ua ke rau hauv dav-bandgap semiconductor heterostructures.
Qhov zoo ntawm 4H-SiC Ingot
High Purity: Ua nyob rau hauv cov xwm txheej nruj kom txo qis impurities thiab qhov tsis xws luag.
Scalability: Muaj nyob rau hauv ob qho tib si 4-nti thiab 6-inch diameters los txhawb kev lag luam-tus qauv thiab kev tshawb fawb-kev xav tau.
Versatility: Adaptable rau ntau hom doping thiab orientations kom tau raws li cov kev thov tshwj xeeb.
Kev Ua Haujlwm Zoo: Zoo tshaj thermal thiab mechanical stability nyob rau hauv huab kev ua haujlwm.

Xaus

Lub 4H-SiC ingot, nrog nws cov khoom tshwj xeeb thiab kev siv dav dav, sawv ntawm lub hauv ntej ntawm cov ntaub ntawv tshiab rau tiam tom ntej electronics thiab optoelectronics. Txawm hais tias siv rau kev tshawb fawb kev kawm, kev tsim qauv tsim, lossis kev tsim khoom siv qib siab, cov khoom siv no muab lub platform txhim khu kev qha rau thawb cov ciam teb ntawm kev siv tshuab. Nrog rau qhov ntev customizable, doping, thiab orientations, 4H-SiC ingot yog tsim los ua kom tau raws li qhov kev xav tau ntawm kev lag luam semiconductor.
Yog tias koj xav kawm ntxiv lossis tso ib qho kev txiav txim, thov koj xav tiv tauj rau cov ncauj lus kom ntxaws specifications thiab kev sab laj.