SiC substrate Dia200mm 4H-N thiab HPSI Silicon carbide

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Silicon carbide substrate (SiC wafer) yog cov khoom siv dav-bandgap semiconductor nrog cov khoom zoo ntawm lub cev thiab tshuaj lom neeg, tshwj xeeb tshaj yog nyob rau hauv high-temperature, high-frequency, high-power, thiab high-radiation ib puag ncig. 4H-V yog ib qho ntawm cov qauv crystalline ntawm silicon carbide. Tsis tas li ntawd, SiC substrates muaj cov thermal conductivity zoo, uas txhais tau hais tias lawv tuaj yeem tshem tawm cov cua sov los ntawm cov khoom siv thaum lub sijhawm ua haujlwm, ntxiv dag zog rau kev ntseeg siab thiab kev ua neej nyob ntawm cov khoom siv.

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4H-N thiab HPSI yog polytype ntawm silicon carbide (SiC), nrog cov qauv siv lead ua lattice uas muaj hexagonal units ua los ntawm plaub carbon thiab plaub silicon atoms. Cov qauv no tso cai rau cov khoom siv nrog cov khoom siv hluav taws xob zoo heev thiab cov yam ntxwv ntawm kev tawg. Ntawm tag nrho cov SiC polytypes, 4H-N thiab HPSI tau siv dav hauv kev siv hluav taws xob hluav taws xob vim nws cov hluav taws xob sib npaug thiab qhov txav mus los thiab cov thermal conductivity ntau dua.

Qhov tshwm sim ntawm 8inch SiC substrates sawv cev rau kev nce qib tseem ceeb rau kev lag luam hluav taws xob semiconductor. Ib txwm siv cov ntaub ntawv silicon-based semiconductor muaj kev poob qis hauv kev ua tau zoo nyob rau hauv cov xwm txheej hnyav xws li qhov kub thiab txias siab, thaum SiC substrates tuaj yeem tswj tau lawv cov kev ua tau zoo. Piv nrog rau cov substrates me me, 8inch SiC substrates muab qhov loj dua ib qho chaw ua haujlwm, uas txhais tau hais tias kev tsim khoom ntau dua thiab cov nqi qis dua, tseem ceeb heev rau kev tsav cov txheej txheem kev lag luam ntawm SiC thev naus laus zis.

Kev loj hlob thev naus laus zis rau 8inch silicon carbide (SiC) substrates yuav tsum muaj siab precision thiab purity. Qhov zoo ntawm cov substrate cuam tshuam ncaj qha rau kev ua haujlwm ntawm cov khoom siv tom ntej, yog li cov tuam txhab lag luam yuav tsum siv cov thev naus laus zis los xyuas kom meej cov crystalline zoo meej thiab qhov tsis xws luag ntawm cov substrates. Qhov no feem ntau suav nrog cov txheej txheem tshuaj lom neeg vapor deposition (CVD) thiab cov txheej txheem siv lead ua kom loj hlob thiab txiav. 4H-N thiab HPSI SiC substrates yog tshwj xeeb tshaj yog dav siv nyob rau hauv lub teb ntawm lub hwj chim electronics, xws li nyob rau hauv high-efficiency fais fab mov converters, traction inverters rau hluav taws xob tsheb, thiab lub zog tauj dua tshiab.

Peb tuaj yeem muab 4H-N 8inch SiC substrate, qib sib txawv ntawm substrate Tshuag wafers. Peb kuj tuaj yeem npaj customization raws li koj xav tau. Txais tos nug!