SiC substrate P-hom 4H / 6H-P 3C-N 4inch withe thickness ntawm 350um Ntau lawm qib Dummy qib

Lus piav qhia luv luv:

P-hom 4H / 6H-P 3C-N 4-nti SiC substrate, nrog ib tug tuab ntawm 350 μm, yog ib tug high-kev ua tau zoo semiconductor khoom lug siv nyob rau hauv hluav taws xob khoom tsim. Paub txog nws qhov tshwj xeeb thermal conductivity, siab tawg voltage, thiab tsis kam mus rau huab cua kub thiab corrosive ib puag ncig, lub substrate no zoo tagnrho rau kev siv hluav taws xob hluav taws xob. Cov txheej txheem ntau lawm yog siv hauv kev tsim khoom loj, ua kom muaj kev tswj xyuas nruj thiab muaj kev ntseeg siab hauv cov khoom siv hluav taws xob siab heev. Meanwhile, lub dummy-qib substrate feem ntau yog siv rau cov txheej txheem debugging, khoom calibration, thiab prototyping. Cov khoom zoo tshaj ntawm SiC ua rau nws yog qhov kev xaiv zoo tshaj plaws rau cov khoom siv ua haujlwm hauv high-temperature, high-voltage, thiab high-frequency ib puag ncig, nrog rau cov khoom siv hluav taws xob thiab RF systems.

Xa email rau peb

Product Detail

Khoom cim npe

4inch SiC substrate P-hom 4H / 6H-P 3C-N parameter rooj

4 inch diam siliconCarbide (SiC) substrate Specification

Qib			Zero MPD Production Qib (Z Qib)	Txheem ntau lawm Qib (P Qib)	Dummy Qib (D Qib)
Txoj kab uas hla			99.5mm ~ 100.0 hli
Thickness			350 μm ± 25 μm
Wafer Orientation			Tawm axis: 2.0 ° -4.0 ° mus rau [112(-)0] ± 0.5 ° rau 4H / 6H-P, On axis: 〈111〉 ± 0.5 ° rau 3C-N
Micropipe ntom ntom			0 cm-2
Kev tiv thaiv	p-type 4H/6H-P		≤0.1 Ωꞏcm		≤0.3 Ωꞏcm
	N-type 3C-N		≤ 0.8 mΩ ꞏcm		≤1m Ωꞏcm
Thawj Txoj Kev Ncaj Ncees		4H/6H-P	- {1010} ± 5.0°
		3 C-N	- {110} ± 5.0°
Qhov Loj Loj Loj			32.5 hli ± 2.0 hli
Secondary Flat Length			18.0 hli ± 2.0 hli
Secondary Flat Orientation			Silicon lub ntsej muag: 90 ° CW. los ntawm Prime flat±5.0° Nws
Ntug Exclusion			3 hli		6 hli
LTV/TTV/How/Warp			≤ 2.5 μm / ≤5 μm / ≤15 μm / ≤30 ib m		≤10 μm / ≤15 μm / ≤25 μm / ≤40 ib m
Roughness			Polish Ra≤1nm
			CMP Ra≤0.2nm		Ra≤0.5nm
Ntug Cracks Los ntawm High Intensity Light			Tsis muaj		Qhov ntev ≤ 10 hli, ib qhov ntev ≤ 2 hli
Hex Phaj Los Ntawm Lub Teeb Siab Siab			Thaj tsam ≤ 0.05%		Cov cheeb tsam sib sau ≤0.1%
Polytype Areas Los Ntawm Lub Teeb Siab Siab			Tsis muaj		Thaj tsam ≤ 3%
Visual Carbon suav nrog			Thaj tsam ≤ 0.05%		Qhov loj me ≤ 3%
Silicon Surface Scratches Los ntawm High Intensity Light			Tsis muaj		Qhov ntev ≤1 × wafer txoj kab uas hla
Ntug Chips Siab Los Ntawm Kev Siv Lub Teeb			Tsis muaj kev tso cai ≥0.2mm dav thiab qhov tob		5 tso cai, ≤1mm txhua
Silicon Surface Contamination Los Ntawm Kev Siv Siab			Tsis muaj
Ntim			Multi-wafer Cassette lossis Ib Lub Thawv Wafer

Nco tseg:

※ Cov kev txwv tsis raug siv rau tag nrho wafer nto tsuas yog rau thaj tsam ntawm ntug kev cais tawm. # Cov khawb yuav tsum tau kuaj xyuas ntawm Si ntsej muag nkaus xwb.

P-hom 4H / 6H-P 3C-N 4-nti SiC substrate nrog ib tug tuab ntawm 350 μm yog dav siv nyob rau hauv advanced hluav taws xob thiab hluav taws xob khoom tsim. Nrog zoo thermal conductivity, siab tawg voltage, thiab muaj zog tsis kam mus rau huab ib puag ncig, no substrate yog zoo tagnrho rau high-kev ua tau zoo fais fab electronics xws li high-voltage switches, inverters, thiab RF li. Cov txheej txheem ntau lawm yog siv rau hauv kev tsim khoom loj, ua kom ntseeg tau, kev ua haujlwm siab ntawm cov cuab yeej siv, uas yog qhov tseem ceeb rau kev siv hluav taws xob hluav taws xob thiab kev siv ntau zaus. Dummy-qib substrates, ntawm qhov tod tes, feem ntau yog siv rau cov txheej txheem calibration, kuaj cov cuab yeej, thiab kev tsim qauv, pab tswj kev tswj kom zoo thiab cov txheej txheem sib xws hauv cov khoom siv semiconductor.

SpecificationQhov zoo ntawm N-hom SiC composite substrates suav nrog

High Thermal conductivity: Kev siv hluav taws xob ua kom zoo ua rau lub substrate zoo tagnrho rau kev siv hluav taws xob thiab hluav taws xob siab.
High Breakdown Voltage: Txhawb kev ua haujlwm siab, ua kom muaj kev ntseeg siab hauv cov khoom siv hluav taws xob thiab RF.
Kev Ua Phem Rau Ib puag ncig hnyav: Durable nyob rau hauv huab mob xws li kub siab thiab corrosive ib puag ncig, kom ntseeg tau tias kev ua haujlwm ntev.
Qhuav-qib Precision: Ua kom muaj kev ua tau zoo thiab txhim khu kev qha hauv kev tsim khoom loj, haum rau kev siv zog siab thiab RF.
Dummy-Qib rau kev xeem: Ua kom muaj cov txheej txheem calibration kom raug, kuaj cov cuab yeej siv, thiab kev tsim qauv yam tsis muaj kev cuam tshuam rau qib wafers.

Zuag qhia tag nrho, P-hom 4H / 6H-P 3C-N 4-nti SiC substrate nrog lub thickness ntawm 350 μm muaj cov txiaj ntsig zoo rau kev siv hluav taws xob ua haujlwm siab. Nws cov thermal conductivity thiab tawg voltage ua rau nws zoo tagnrho rau high-power thiab high-temperature ib puag ncig, thaum nws tsis kam mus rau hnyav tej yam kev mob ua kom durability thiab kev cia siab rau. Cov qib qib substrate ua kom paub meej thiab ua tau zoo ib yam hauv kev tsim khoom loj ntawm cov khoom siv hluav taws xob thiab RF. Meanwhile, lub dummy-qib substrate yog qhov tseem ceeb rau cov txheej txheem calibration, cov cuab yeej kuaj, thiab prototyping, txhawb kev tswj kom zoo thiab sib xws hauv semiconductor ntau lawm. Cov yam ntxwv no ua rau SiC substrates muaj ntau yam rau cov ntawv thov siab heev.