Silicon carbide kuj ntev siv lead ua rauv loj hlob 6/8/12inch nti SiC ingot siv lead ua PVT txoj kev

Lus piav qhia luv luv:

Silicon carbide tiv thaiv kev loj hlob rauv (PVT txoj kev, lub cev vapor hloov txoj kev) yog ib qho khoom siv tseem ceeb rau kev loj hlob ntawm silicon carbide (SiC) ib leeg siv lead ua los ntawm kub sublimation-recrystallization txoj cai. Cov thev naus laus zis siv cov cua sov ua kom sov (graphite cua sov lub cev) kom sublimate SiC raw khoom ntawm qhov kub ntawm 2000 ~ 2500 ℃, thiab recrystallize nyob rau hauv qhov kub thiab txias cheeb tsam (cov noob siv lead ua) los tsim ib tug zoo SiC ib leeg siv lead ua (4H / 6H-SiC). PVT txoj kev yog cov txheej txheem tseem ceeb rau kev tsim khoom loj ntawm SiC substrates ntawm 6 ntiv tes thiab hauv qab no, uas yog siv dav hauv kev npaj substrate ntawm lub zog semiconductors (xws li MOSFETs, SBD) thiab xov tooj cua zaus (GaN-on-SiC).

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Khoom cim npe

Txoj haujlwm ua haujlwm:

1. Raw khoom thauj khoom: siab purity SiC hmoov (los yog thaiv) muab tso rau hauv qab ntawm graphite crucible (qhov kub thiab txias cheeb tsam).

2. Nqus/inert ib puag ncig: nqus lub cub tawg chamber (<10⁻³ mbar) los yog dhau inert gas (Ar).

3. Kub kub sublimation: tiv thaiv cua sov rau 2000 ~ 2500 ℃, SiC decomposition rau Si, Si₂C, SiC₂ thiab lwm yam roj theem Cheebtsam.

4. Gas theem kis tau tus mob: qhov kub gradient tsav lub diffusion ntawm cov khoom siv roj theem mus rau thaj tsam uas tsis kub (cov noob kawg).

5. Crystal kev loj hlob: Cov roj theem recrystallizes ntawm cov noob Crystal thiab loj hlob nyob rau hauv ib qho kev taw qhia raws C-axis lossis A-axis.

Cov ntsiab lus tseem ceeb:

1. Kub gradient: 20 ~ 50 ℃ / cm (tswj kev loj hlob tus nqi thiab defect ntom).

2. Siab: 1 ~ 100mbar (tsis tshua muaj siab los txo impurity incorporation).

3.Growth npaum li cas: 0.1 ~ 1mm / h (raug siv lead ua zoo thiab ntau lawm efficiency).

Cov yam ntxwv tseem ceeb:

(1) Crystal zoo
Tsawg qhov tsis xws luag: microtubule ntom <1 cm⁻², dislocation ceev 10³ ~ 10⁴ cm⁻² (los ntawm cov noob optimization thiab tswj txheej txheem).

Polycrystalline hom tswj: tuaj yeem loj hlob 4H-SiC (mainstream), 6H-SiC, 4H-SiC feem> 90% (yuav tsum tau tswj kom raug qhov kub thiab txias gradient thiab roj theem stoichiometric piv).

(2) Cov khoom siv ua haujlwm
Kev ruaj ntseg kub kub: graphite cua sov lub cev kub> 2500 ℃, lub tshuab ua kom sov lub cev siv ntau txheej rwb thaiv tsev tsim (xws li graphite hnov + lub tsho dej txias).

Kev tswj tsis sib xws: Axial / radial kub hloov pauv ntawm ± 5 ° C kom ntseeg tau tias siv lead ua kab sib xws (6-nti substrate thickness sib txawv <5%).

Degree ntawm automation: Integrated PLC tswj qhov system, real-time xyuas ntawm qhov kub thiab txias, siab thiab loj hlob tus nqi.

(3) Kev siv technology zoo
Kev siv cov khoom siv siab: raw khoom hloov pauv tus nqi> 70% (zoo dua li CVD txoj kev).

Loj loj compatibility: 6-nti loj ntau lawm tau tiav, 8-nti yog nyob rau hauv txoj kev loj hlob theem.

(4) Kev siv hluav taws xob thiab nqi
Lub zog noj ntawm ib lub cub tawg yog 300 ~ 800kW · h, suav txog 40% ~ 60% ntawm cov nqi tsim khoom ntawm SiC substrate.

Cov cuab yeej siv peev nyiaj yog siab (1.5M 3M ib chav tsev), tab sis tus nqi tsev substrate qis dua li CVD txoj kev.

Core applications:

1. Fais fab electronics: SiC MOSFET substrate rau hluav taws xob tsheb inverter thiab photovoltaic inverter.

2. Rf li: 5G puag chaw nres tsheb GaN-on-SiC epitaxial substrate (tsuas yog 4H-SiC).

3. Cov khoom siv ib puag ncig huab cua: kub thiab siab siab sensors rau aerospace thiab nuclear zog khoom.

Technical Parameters:

Specification	Paub meej
Qhov Loj (L × W × H)	2500 × 2400 × 3456 mm los yog kho
Crucible Diameter	900 hli
Qhov kawg nqus siab	6 × 10⁻⁴ Pa (tom qab 1.5h ntawm lub tshuab nqus tsev)
Leakage Rate	≤5 Pa / 12h (kub tawm)
Rotation Ncej Diameter	50 mm
Kev sib hloov ceev	0.5-5 rpm
Txoj Kev Kub Kub	Hluav taws xob tiv thaiv cua sov
Qhov kub siab tshaj qhov cub	2500 ° C
Lub zog cua sov	40 kW × 2 × 20 kW
Kev ntsuas kub	Dual-xim infrared pyrometer
Qhov kub thiab txias	900-3000 ° C
Kub qhov tseeb	± 1 ° C
Siab Ntau	1-700 hli
Siab tswj qhov tseeb	1-10 mbar: ± 0.5% FS; 10-100 mbar: ± 0.5% FS; 100-700 mbar: ± 0.5% FS
Hom kev ua haujlwm	Hauv qab loading, phau ntawv / tsis siv neeg kev nyab xeeb xaiv
Xaiv yam ntxwv	Kev ntsuas kub dual, ntau thaj chaw cua sov

XKH Services:

XKH muab tag nrho cov txheej txheem kev pabcuam ntawm SiC PVT rauv, suav nrog cov khoom siv kho kom haum (tsim tshav kub tsim, kev tswj tsis siv neeg), kev txhim kho cov txheej txheem (crystal shape control, defect optimization), kev cob qhia (kev khiav hauj lwm thiab kev saib xyuas) thiab kev pab cuam tom qab muag (graphite qhov chaw hloov, thermal teb calibration) los pab cov neeg muas zaub ua tau zoo sic siv lead ua ntau lawm. Peb kuj muab cov txheej txheem hloov kho cov kev pab cuam txuas ntxiv txhim kho cov khoom siv lead ua thiab kev loj hlob zoo, nrog rau lub sijhawm ua haujlwm ntawm 3-6 lub hlis.