Silicon Carbide SiC Ingot 6inch N hom Dummy / prime qib thickness tuaj yeem kho

Silicon Carbide SiC Ingot 6inch N hom Dummy / prime qib thickness tuaj yeem ua raws li Cov Duab Duab

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Silicon Carbide (SiC) yog cov khoom siv dav-bandgap semiconductor uas tau txais kev cuam tshuam loj thoob plaws ntau qhov kev lag luam vim nws cov hluav taws xob zoo tshaj, thermal, thiab cov khoom siv kho tshuab. Lub SiC Ingot nyob rau hauv 6-nti N-hom Dummy / Prime qib yog tsim tshwj xeeb rau kev tsim cov khoom siv hluav taws xob siab tshaj plaws, suav nrog kev siv hluav taws xob siab thiab siv ntau zaus. Nrog customizable thickness xaiv thiab meej specifications, no SiC ingot muab ib tug zoo tagnrho kev daws teeb meem rau txoj kev loj hlob ntawm cov cuab yeej siv nyob rau hauv hluav taws xob tsheb, muaj zog tshuab, kev sib txuas lus, thiab lwm yam kev ua tau zoo sectors. SiC qhov kev ua tau zoo nyob rau hauv high-voltage, high-temperature, thiab high-frequency tej yam kev mob ua kom lub neej ntev, zoo, thiab txhim khu kev qha kev ua tau zoo nyob rau hauv ntau yam kev siv.
Lub SiC Ingot muaj nyob rau hauv 6-nti loj, nrog ib txoj kab uas hla ntawm 150.25mm ± 0.25mm thiab ib tug thickness ntau dua 10mm, ua rau nws zoo tagnrho rau wafer slicing. Cov khoom no muaj qhov zoo-txhais qhov chaw taw qhia ntawm 4 ° mus rau <11-20> ± 0.2 °, kom ntseeg tau siab precision hauv kev tsim khoom. Tsis tas li ntawd, lub ingot nta ib qho kev taw qhia ncaj nraim ntawm <1-100> ± 5 °, ua rau pom kev siv lead ua zoo sib xws thiab kev ua haujlwm zoo.
Nrog rau siab resistivity nyob rau hauv thaj tsam ntawm 0.015-0.0285 Ω·cm, tsawg micropipe ntom ntawm <0.5, thiab zoo heev ntug zoo, no SiC Ingot yog haum rau zus tau tej cov khoom siv fais fab uas yuav tsum tau tsawg kawg nkaus thiab kev ua tau zoo nyob rau hauv cov huab cua puag.

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Product Detail

Khoom cim npe

Cov khoom

Qib: Qhuav Qib (Dummy / Prime)
Loj: 6-inch diam
Loj: 150.25mm ± 0.25mm
Thickness:> 10mm (Customizable thickness muaj raws li qhov kev thov)
Surface Orientation: 4 ° ntawm <11-20> ± 0.2 °, uas ua kom cov khoom siv lead ua tau zoo thiab raug kho kom haum rau kev tsim khoom.
Kev taw qhia ntawm lub tiaj tiaj tiaj: <1-100> ± 5 °, qhov tseem ceeb rau kev ua haujlwm zoo ntawm cov ingot rau hauv wafers thiab kom pom kev loj hlob siv lead ua.
Primary Flat Length: 47.5mm ± 1.5mm, tsim kom yooj yim tuav thiab precision txiav.
Resistivity: 0.015-0.0285 Ω·cm, zoo tagnrho rau kev siv hauv cov khoom siv hluav taws xob ua haujlwm siab.
Micropipe Density: <0.5, kom ntseeg tau qhov tsis xws luag uas tuaj yeem cuam tshuam kev ua haujlwm ntawm cov khoom siv fabricated.
BPD (Boron Pitting Density): <2000, tus nqi qis uas qhia tau hais tias siv lead ua purity siab thiab qhov tsis xws luag.
TSD (Threading Screw Dislocation Density): <500, kom ntseeg tau tias cov khoom siv zoo heev rau cov khoom siv ua haujlwm siab.
Polytype Areas: Tsis muaj - lub ingot yog dawb los ntawm polytype tsis xws luag, muab superior khoom zoo rau high-end daim ntaub ntawv.
Ntug Indents: <3, nrog rau 1 hli dav thiab qhov tob, kom ntseeg tau qhov kev puas tsuaj tsawg kawg nkaus thiab tswj xyuas qhov kev ncaj ncees ntawm cov ingot kom ua tau zoo wafer slicing.
Ntug Cracks: 3, <1mm txhua qhov, nrog qhov tshwm sim qis ntawm ntug kev puas tsuaj, ua kom muaj kev nyab xeeb thiab ua haujlwm ntxiv.
Ntim: Cov ntaub ntawv wafer - SiC ingot tau ntim ruaj ntseg hauv rooj plaub wafer kom muaj kev nyab xeeb kev thauj mus los thiab tuav.

Daim ntawv thov

Lub zog Electronics:6-nti SiC ingot yog siv dav hauv kev tsim cov khoom siv hluav taws xob xws li MOSFETs, IGBTs, thiab diodes, uas yog cov khoom tseem ceeb hauv kev hloov hluav taws xob. Cov khoom siv no tau siv dav hauv lub tsheb fais fab (EV) inverters, muaj lub cev muaj zog tsav, cov khoom siv hluav taws xob, thiab lub zog cia. SiC lub peev xwm ua haujlwm ntawm high voltages, high zaus, thiab huab cua kub ua rau nws zoo tagnrho rau cov ntawv thov uas tsoos silicon (Si) cov cuab yeej yuav tawm tsam kom ua tau zoo.

Electric Vehicles (EVs):Hauv cov tsheb fais fab, SiC-based Cheebtsam yog qhov tseem ceeb rau kev txhim kho cov fais fab modules hauv inverter, DC-DC converters, thiab on-board chargers. Qhov zoo tshaj thermal conductivity ntawm SiC tso cai rau txo qis kev tsim hluav taws xob thiab kev ua haujlwm zoo dua hauv kev hloov hluav taws xob, uas yog qhov tseem ceeb rau kev txhim kho kev ua tau zoo thiab kev tsav tsheb ntau ntawm cov tsheb hluav taws xob. Tsis tas li ntawd, SiC cov cuab yeej ua kom cov khoom me me, sib zog, thiab txhim khu kev qha ntau dua, ua rau kev ua haujlwm tag nrho ntawm EV systems.

Renewable Energy Systems:SiC ingots yog cov khoom siv tseem ceeb hauv kev txhim kho cov khoom siv hluav taws xob hloov hluav taws xob siv hauv cov tshuab hluav taws xob txuas ntxiv, suav nrog hnub ci inverters, cua turbines, thiab cov kev daws teeb meem ntawm lub zog. SiC lub peev xwm tswj tau lub zog siab thiab kev tswj xyuas thermal ua kom muaj zog ntau dua thiab txhim kho kev ntseeg siab hauv cov tshuab no. Nws siv nyob rau hauv lub zog tauj dua tshiab pab tsav lub ntiaj teb kev siv zog mus rau lub zog ruaj khov.

Kev Sib Txuas Lus:Lub 6-nti SiC ingot tseem tsim nyog rau kev tsim cov khoom siv hauv high-power RF (xov tooj cua zaus) daim ntawv thov. Cov no suav nrog amplifiers, oscillators, thiab cov ntxaij lim dej siv hauv kev sib txuas lus thiab kev sib txuas lus satellite. Lub peev xwm ntawm SiC los tswj cov zaus siab thiab lub zog siab ua rau nws yog ib qho khoom siv zoo heev rau kev sib txuas lus uas yuav tsum tau muaj kev ua tau zoo thiab cov teeb liab tsawg tsawg.

Aerospace thiab Defense:SiC's high breakdown voltage thiab tiv taus kub kub ua rau nws zoo tagnrho rau aerospace thiab tiv thaiv daim ntaub ntawv. Cheebtsam ua los ntawm SiC ingots yog siv nyob rau hauv radar systems, satellite kev sib txuas lus, thiab lub hwj chim electronics rau aircraft thiab spacecraft. SiC-raws li cov ntaub ntawv ua rau lub tshuab aerospace ua haujlwm nyob rau hauv cov xwm txheej huab cua uas tau ntsib hauv qhov chaw thiab qhov chaw siab.

Industrial Automation:Hauv kev lag luam automation, SiC Cheebtsam yog siv nyob rau hauv sensors, actuators, thiab tswj systems uas yuav tsum tau ua hauj lwm nyob rau hauv hnyav ib puag ncig. SiC-raws li cov cuab yeej siv tau ua haujlwm hauv cov tshuab uas xav tau cov khoom siv tau zoo, siv tau ntev, muaj peev xwm tiv taus qhov kub thiab txias thiab hluav taws xob.

Khoom Specification Table

Khoom	Specification
Qib	Production (Dummy/Prime)
Loj	6-nti
Txoj kab uas hla	150.25mm ± 0.25mm
Thickness	> 10mm (Customizable)
Surface Orientation	4 ° rau <11-20> ± 0.2 °
Thawj Txoj Kev Ncaj Ncees	<1-100> ± 5°
Qhov Loj Loj Loj	47.5mm ± 1.5mm
Kev tiv thaiv	0.015-0.0285 Ω · cm
Micropipe ntom ntom	<0.5
Boron Pitting Ceev (BPD)	<2000
Threading Screw Dislocation Density (TSD)	<500
Polytype Areas	Tsis muaj
Ntug Indents	<3,1mm dav thiab qhov tob
Ntug Cracks	3, <1mm/ua
Ntim	Wafer cas

Xaus

6-nti SiC Ingot - N-hom Dummy / Prime qib yog cov khoom siv zoo tshaj plaws uas ua tau raws li cov kev cai nruj ntawm kev lag luam semiconductor. Nws cov thermal conductivity, tshwj xeeb tiv thaiv, thiab qhov tsis xws luag ua rau nws yog qhov kev xaiv zoo tshaj plaws rau kev tsim cov khoom siv hluav taws xob zoo tshaj plaws, cov khoom siv tsheb, kev sib txuas lus, thiab cov tshuab hluav taws xob txuas ntxiv mus. Lub thickness customizable thiab precision specifications xyuas kom meej tias qhov SiC ingot no tuaj yeem raug kho rau ntau yam kev siv, ua kom muaj kev ua tau zoo thiab kev ntseeg siab hauv qhov xav tau ib puag ncig. Yog xav paub ntxiv los yog tso ib qho kev txiav txim, thov hu rau peb pab neeg muag khoom.