Silicon Carbide (SiC) Ib-Crystal Substrate - 10 × 10mm Wafer
Daim duab nthuav dav ntawm Silicon Carbide (SiC) substrate wafer


Txheej txheem cej luam ntawm Silicon Carbide (SiC) substrate wafer

Cov10 × 10mm Silicon Carbide (SiC) ib leeg-crystal substrate waferyog cov khoom siv hluav taws xob zoo tshaj plaws uas tsim los rau cov khoom siv hluav taws xob txuas ntxiv mus thiab kev siv optoelectronic. Featuring tshwj xeeb thermal conductivity, dav bandgap, thiab zoo heev tshuaj stability, Silicon Carbide (SiC) substrate wafer muab lub hauv paus rau cov khoom uas ua hauj lwm zoo nyob rau hauv high kub, high zaus, thiab high voltage tej yam kev mob. Cov substrates no yog precision-txiav rau hauv10 × 10mm square chips, zoo tagnrho rau kev tshawb fawb, prototyping, thiab ntaus ntawv fabrication.
Kev tsim cov qauv ntawm Silicon Carbide (SiC) substrate wafer
Silicon Carbide (SiC) substrate wafer yog tsim los ntawm Physical Vapor Transport (PVT) lossis sublimation txoj kev loj hlob. Cov txheej txheem pib nrog high-purity SiC hmoov loaded rau hauv graphite crucible. Nyob rau hauv qhov kub siab tshaj 2,000 ° C thiab ib puag ncig tswj, cov hmoov sublimates rau hauv vapor thiab rov tso rau hauv cov noob ua tib zoo taw qhia siv lead ua, tsim ib qho loj, tsis xws luag-tsawg ib qho siv lead ua ingot.
Thaum SiC boule loj hlob, nws nkag mus:
- Ingot slicing: Precision pob zeb diamond hlau saws txiav SiC ingot rau hauv wafers lossis chips.
- Lapping thiab sib tsoo: Nto yog flattened kom tshem tawm cov cim thiab ua tiav cov tuab tuab.
- Chemical Mechanical Polishing (CMP): Ua tiav daim iav epi-npaj tiav nrog qhov tsis tshua muaj qhov roughness.
- Kev xaiv doping: Nitrogen, txhuas, lossis boron doping tuaj yeem ua tswvcuab los kho cov khoom siv hluav taws xob (n-type lossis p-type).
- Kev soj ntsuam zoo: Kev ntsuas qib siab ua kom wafer flatness, thickness uniformity, thiab qhov tsis xws luag raws li cov kev xav tau ntawm cov semiconductor-qib.
Cov txheej txheem ntau kauj ruam no ua rau muaj zog 10 × 10mm Silicon Carbide (SiC) substrate wafer chips uas tau npaj rau kev loj hlob ntawm epitaxial lossis kev tsim khoom ncaj qha.
Khoom Yam ntxwv ntawm Silicon Carbide (SiC) substrate wafer


Silicon Carbide (SiC) substrate wafer feem ntau yog ua los ntawm4 H-SiC or 6 H-SiCpolytypes:
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4 H-SiC:Nws muaj cov khoom siv hluav taws xob siab, ua rau nws zoo tagnrho rau cov khoom siv hluav taws xob xws li MOSFETs thiab Schottky diodes.
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6 H-SiC:Muab cov khoom tshwj xeeb rau RF thiab optoelectronic Cheebtsam.
Cov khoom tseem ceeb ntawm Silicon Carbide (SiC) substrate wafer:
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Wide bandgap:~ 3.26 eV (4H-SiC) - ua kom muaj zog tawg siab thiab tsis tshua muaj kev hloov pauv.
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Thermal conductivity:3-4.9 W / cm·K - dissipates tshav kub zoo, ua kom muaj kev ruaj ntseg hauv cov tshuab hluav taws xob siab.
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Hardness:~ 9.2 ntawm Mohs nplai - ua kom lub zog ua haujlwm tau zoo thaum lub sijhawm ua haujlwm thiab cov cuab yeej siv.
Kev siv ntawm Silicon Carbide (SiC) substrate wafer
Lub versatility ntawm Silicon Carbide (SiC) substrate wafer ua rau lawv muaj txiaj ntsig thoob plaws ntau qhov kev lag luam:
Fais fab Electronics: Basis rau MOSFETs, IGBTs, thiab Schottky diodes siv nyob rau hauv hluav taws xob tsheb (EVs), cov khoom siv fais fab, thiab lub zog tauj dua tshiab.
RF & Microwave Devices: Txhawb transistors, amplifiers, thiab radar Cheebtsam rau 5G, satellite, thiab tiv thaiv daim ntaub ntawv.
Optoelectronics: Siv nyob rau hauv UV LEDs, photodetectors, thiab laser diodes qhov siab UV transparency thiab stability yog qhov tseem ceeb.
Aerospace & Defense: Txhim khu kev qha substrate rau high-temperature, hluav taws xob-hardened electronics.
Kev Tshawb Fawb Cov Tsev Kawm Ntawv & Cov Tsev Kawm Qib Siab: Zoo tagnrho rau kev tshawb fawb cov ntaub ntawv tshawb fawb, kev tsim cov cuab yeej tsim qauv, thiab kuaj cov txheej txheem epitaxial tshiab.
Specifications rau Silicon Carbide (SiC) substrate wafer Chips
Khoom | Tus nqi |
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Loj | 10mm × 10mm square |
Thickness | 330-500 μm (customizable) |
Polytype | 4H-SiC los yog 6H-SiC |
Kev taw qhia | C-plane, tawm-axis (0 ° / 4 °) |
Nto tiav | Ib sab lossis ob sab polished; epi-npaj muaj |
Doping Options | N-hom lossis P-hom |
Qib | Qib tshawb fawb lossis qib ntaus ntawv |
FAQ ntawm Silicon Carbide (SiC) substrate wafer
Q1: Dab tsi ua rau Silicon Carbide (SiC) substrate wafer zoo dua li cov tsoos silicon wafers?
SiC muaj 10 × siab dua qhov kev sib tsoo lub zog, kev ua haujlwm kub zoo dua, thiab kev hloov pauv qis dua, ua rau nws zoo tagnrho rau kev ua haujlwm siab, cov khoom siv hluav taws xob siab uas silicon tsis tuaj yeem txhawb nqa.
Q2: Puas yog 10 × 10mm Silicon Carbide (SiC) substrate wafer tuaj yeem muab cov txheej txheem epitaxial?
Yog lawm. Peb muab epi-npaj substrates thiab tuaj yeem xa cov wafers nrog cov txheej txheem epitaxial kom tau raws li cov khoom siv hluav taws xob tshwj xeeb lossis cov khoom siv LED.
Q3: Puas yog kev cai loj thiab qib doping muaj?
kiag li. Thaum 10 × 10mm chips yog tus qauv rau kev tshawb fawb thiab cov qauv ntsuas, kev cai qhov ntev, thicknesses, thiab doping profiles muaj nyob rau ntawm kev thov.
Q4: Ntev npaum li cas cov wafers nyob rau hauv ib puag ncig huab?
SiC tuav cov qauv kev ncaj ncees thiab kev ua haujlwm ntawm hluav taws xob siab tshaj 600 ° C thiab nyob rau hauv cov hluav taws xob siab, ua rau nws zoo tagnrho rau aerospace thiab tub rog-qib electronics.
Txog Peb
XKH tshwj xeeb hauv kev tsim cov thev naus laus zis, tsim khoom, thiab muag cov iav tshwj xeeb kho qhov muag thiab cov ntaub ntawv siv lead ua tshiab. Peb cov khoom siv kho qhov muag khoom siv hluav taws xob, khoom siv hluav taws xob, thiab tub rog. Peb muab Sapphire optical Cheebtsam, xov tooj ntawm tes lens npog, Ceramics, LT, Silicon Carbide SIC, Quartz, thiab semiconductor siv lead ua wafers. Nrog cov kws tshaj lij thiab cov cuab yeej siv niaj hnub, peb ua tau zoo hauv kev ua cov khoom lag luam uas tsis yog tus qauv, aiming los ua ib qho khoom siv optoelectronic high-tech enterprise.
