Silicon Dioxide wafer SiO2 wafer tuab Polished, Prime Thiab Test Qib

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Thermal oxidation yog tshwm sim los ntawm exposing silicon wafer rau ib tug ua ke ntawm oxidizing agents thiab tshav kub ua ib txheej ntawm silicon dioxide (SiO2).Peb lub tuam txhab muaj peev xwm customize silicon dioxide oxide flakes nrog txawv tsis rau cov neeg muas zaub, nrog zoo heev zoo; oxide txheej thickness, compactness, uniformity thiab resistivity siv lead ua orientation yog tag nrho siv raws li lub teb chaws tus qauv.

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Taw qhia ntawm wafer box

Khoom	Thermal Oxide (Si + SiO2) wafers
Txoj kev tsim khoom	LPCVD
Nto Polishing	SSP/DSP
Txoj kab uas hla	2 nti / 3 nti / 4 nti / 5 nti / 6 nti
Hom	P hom / N hom
Oxidation Txheej Thickness	100nm ~ 1000nm
Kev taw qhia	<100> <111>
Hluav taws xob resistivity	0.001-25000 (Ω•cm)
Daim ntawv thov	Siv rau synchrotron hluav taws xob coj mus kuaj, PVD / CVD txheej li substrate, magnetron sputtering loj hlob qauv, XRD, SEM,Atomic quab yuam, infrared spectroscopy, fluorescence spectroscopy thiab lwm yam kev soj ntsuam kuaj substrates, molecular beam epitaxial loj hlob substrates, X-ray tsom xam ntawm crystalline semiconductors

Silicon oxide wafers yog silicon dioxide zaj duab xis loj hlob nyob rau saum npoo ntawm silicon wafers los ntawm kev siv oxygen los yog dej vapor ntawm qhov kub siab (800 ° C ~ 1150 ° C) siv cov txheej txheem thermal oxidation nrog atmospheric siab rau cov khoom siv tube. Lub thickness ntawm cov txheej txheem yog li ntawm 50 nanometers mus rau 2 microns, cov txheej txheem kub yog mus txog 1100 degrees Celsius, txoj kev loj hlob yog muab faib ua "ntub oxygen" thiab "dry oxygen" ob yam. Thermal Oxide yog "loj" oxide txheej, uas muaj ntau dua uniformity, zoo densification thiab siab dua dielectric zog tshaj CVD deposited oxide txheej, ua rau superior zoo.

Qhuav Oxygen Oxidation

Silicon reacts nrog oxygen thiab oxide txheej yog tas li txav mus rau lub substrate txheej. Qhuav oxidation yuav tsum tau ua nyob rau ntawm qhov kub ntawm 850 mus rau 1200 ° C, nrog rau kev loj hlob qis, thiab yuav siv tau rau MOS insulated rooj vag loj hlob. Qhuav oxidation yog nyiam dua ntub oxidation thaum zoo, ultra-thin silicon oxide txheej yuav tsum tau. Qhuav oxidation muaj peev xwm: 15nm ~ 300nm.

2. Kev ntub dej oxidation

Txoj kev no siv cov dej vapor los ua cov txheej txheem oxide los ntawm kev nkag mus rau hauv lub cub tawg hauv qhov kub thiab txias. Lub densification ntawm ntub oxygen oxidation yog me ntsis phem dua li cov pa oxidation qhuav, tab sis piv rau qhuav oxygen oxidation nws qhov zoo dua yog tias nws muaj kev loj hlob ntau dua, haum rau ntau tshaj 500nm zaj duab xis loj hlob. Lub peev xwm oxidation ntub dej: 500nm ~ 2µm.

AEMD's atmospheric siab oxidation furnace tube yog Czech kab rov tav rauv tube, uas yog tus cwj pwm los ntawm cov txheej txheem siab ruaj khov, zoo zaj duab xis uniformity thiab superior particle tswj. Silicon oxide rauv tube tuaj yeem ua tiav txog 50 wafers rau ib lub raj, nrog rau kev sib xyaw ua ke zoo heev thiab kev sib tshuam.