12 Nti SiC substrate Diameter 300mm Thickness 750μm 4H-N Hom tuaj yeem kho

12 Nti SiC substrate Diameter 300mm Thickness 750μm 4H-N Hom tuaj yeem hloov kho Cov duab tshwj xeeb

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Thaum lub sijhawm tseem ceeb hauv kev lag luam semiconductor hloov mus rau cov kev daws teeb meem zoo dua thiab kev cog lus, qhov tshwm sim ntawm 12-nti SiC substrate (12-nti silicon carbide substrate) tau hloov pauv cov toj roob hauv pes. Piv rau ib txwm 6-nti thiab 8-nti specifications, qhov loj-loj kom zoo dua ntawm 12-nti substrate nce tus naj npawb ntawm cov chips tsim ib wafer los ntawm ntau tshaj plaub npaug. Tsis tas li ntawd, chav tsev nqi ntawm 12-nti SiC substrate raug txo los ntawm 35-40% piv rau cov pa 8-inch substrates, uas yog qhov tseem ceeb rau kev siv dav dav ntawm cov khoom kawg.
Los ntawm kev ua haujlwm ntawm peb cov khoom lag luam vapor thauj kev loj hlob technology, peb tau ua tiav kev lag luam-kev tswj xyuas qhov sib txawv ntawm qhov ceev ntawm 12-nti crystals, muab lub hauv paus tshwj xeeb rau cov khoom siv tom ntej. Qhov kev nce qib no tseem ceeb tshwj xeeb thaum lub ntiaj teb chip tsis txaus tam sim no.

Cov cuab yeej siv hluav taws xob tseem ceeb hauv cov ntawv thov niaj hnub - xws li EV cov chaw them nqi ceev ceev thiab 5G hauv paus chaw nres tsheb - tab tom siv qhov loj-loj substrate. Tshwj xeeb tshaj yog nyob rau hauv high-temperature, high-voltage, thiab lwm yam hnyav ua hauj lwm ib puag ncig, 12-nti SiC substrate qhia tau hais tias nyob deb superior stability piv rau silicon-raws li cov ntaub ntawv.

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Technical parameters

12 nti Silicon Carbide (SiC) Substrate Specification
Qib		ZeroMPD Production Qib (Z Qib)	Txheem ntau lawm Qib (P Qib)		Dummy Qib (D Qib)
Txoj kab uas hla		300mm ~ 1305mm
Thickness	4 H-N	750μm ± 15μm	750μm ± 25μm
	4 H-SI	750μm ± 15μm	750μm ± 25μm
Wafer Orientation		Tawm axis: 4.0 ° mus rau <1120> ± 0.5 ° rau 4H-N, On axis: <0001> ± 0.5 ° rau 4H-SI
Micropipe ntom ntom	4 H-N	≤0.4cm-2	≤4cm-2		≤25cm-2
	4 H-SI	≤5cm-2	≤10cm-2		≤25cm-2
Kev tiv thaiv	4 H-N	0.015 ~ 0.024 Ω·cm			0.015 ~ 0.028 Ω·cm
	4 H-SI	≥1E10 Ω·cm			≥1E5 Ω·cm
Thawj Txoj Kev Ncaj Ncees		{10-10} ± 5.0°
Qhov Loj Loj Loj	4 H-N	N/A
	4 H-SI	Ntsig
Ntug Exclusion		3 hli
LTV/TTV/How/Warp		≤5μm / ≤15μm / ≤35μm / ≤55μm			≤ 5μm / ≤15μm / ≤35 □ μm / ≤55 □ μm
Roughness		Polish Ra≤1nm
		CMP Ra≤0.2nm			Ra≤0.5nm
Ntug Cracks Los ntawm High Intensity Light Hex Phaj Los Ntawm Lub Teeb Siab Siab Polytype Areas Los Ntawm Lub Teeb Siab Siab Visual Carbon suav nrog Silicon Surface Scratches Los ntawm High Intensity Light		Tsis muaj Thaj tsam ≤ 0.05% Tsis muaj Thaj tsam ≤ 0.05% Tsis muaj			Qhov ntev ≤ 20 hli, ib qhov ntev ≤ 2 hli Qhov loj me ≤0.1% Thaj tsam ≤ 3% Qhov loj me ≤ 3% Qhov ntev ≤1 × wafer txoj kab uas hla
Ntug Chips Los ntawm High Intensity Light		Tsis muaj kev tso cai ≥0.2mm dav thiab qhov tob			7 tso cai, ≤1mm txhua
(TSD) Threading ntsia hlau dislocation		≤500cm-2		N/A
(BPD) Base dav hlau dislocation		≤1000cm-2		N/A
Silicon Surface Contamination Los ntawm High Intensity Light		Tsis muaj
Ntim		Multi-wafer Cassette lossis Ib Lub Thawv Wafer
Nco tseg:
1 Cov kev txwv tsis raug siv rau tag nrho wafer nto tshwj tsis yog rau thaj tsam ntawm ntug kev cais tawm. 2 Cov khawb yuav tsum tau kuaj xyuas ntawm Si ntsej muag nkaus xwb. 3 Cov ntaub ntawv dislocation tsuas yog los ntawm KOH etched wafers.

Ntsiab nta

1.Production Peev Xwm thiab Cov Nqi Zoo: Cov khoom loj ntawm 12-nti SiC substrate (12-nti silicon carbide substrate) cim lub sijhawm tshiab hauv kev tsim khoom semiconductor. Tus naj npawb ntawm cov chips tau txais los ntawm ib qho wafer nce mus txog 2.25 npaug ntawm 8-nti substrates, ncaj qha tsav tsheb dhia hauv kev tsim khoom. Cov neeg siv khoom tawm tswv yim qhia tias kev siv 12-nti substrates tau txo lawv cov nqi tsim hluav taws xob los ntawm 28%, tsim kom muaj kev sib tw txiav txim siab zoo hauv kev lag luam sib tw hnyav.
2.Outstanding Physical Properties: 12-nti SiC substrate inherits tag nrho cov zoo ntawm silicon carbide khoom - nws thermal conductivity yog 3 npaug ntawm silicon, thaum nws tawg teb zog mus txog 10 npaug ntawm silicon. Cov yam ntxwv no ua rau cov khoom siv raws li 12-nti substrates ua haujlwm ruaj khov nyob rau hauv qhov chaw kub siab tshaj 200 ° C, ua rau lawv tshwj xeeb tshaj yog tsim nyog rau kev thov xws li tsheb fais fab.
3.Surface Treatment Technology: Peb tau tsim cov txheej txheem tshiab chemical mechanical polishing (CMP) tshwj xeeb rau 12-nti SiC substrates, ua tiav atomic-level deg flatness (Ra<0.15nm). Qhov kev ua tiav no daws qhov kev sib tw thoob ntiaj teb ntawm qhov loj-inch silicon carbide wafer nto kho, tshem tawm cov teeb meem rau kev loj hlob zoo epitaxial.
4.Thermal Management Performance: Hauv kev siv cov tswv yim, 12-nti SiC substrates ua kom pom qhov muaj peev xwm ua kom sov tau zoo heev. Cov ntaub ntawv ntsuam xyuas qhia tau hais tias nyob rau hauv tib lub zog ceev, cov cuab yeej siv 12-nti substrates ua haujlwm ntawm qhov kub ntawm 40-50 ° C qis dua li cov khoom siv silicon, ua kom cov khoom siv tau ntev.

Cov ntawv thov tseem ceeb

1.New Energy Vehicle Ecosystem: Lub 12-nti SiC substrate (12-nti silicon carbide substrate) yog revolutionizing hluav taws xob tsheb powertrain architecture. Los ntawm onboard chargers (OBC) mus rau lub ntsiab tsav inverters thiab roj teeb tswj systems, kev txhim kho efficiency coj los ntawm 12-nti substrates nce tsheb ntau los ntawm 5-8%. Cov ntawv ceeb toom los ntawm ib tus kws tshaj lij automaker qhia tias kev siv peb cov 12-nti substrates txo qis zog hauv lawv cov kev them nqi ceev ceev los ntawm qhov zoo siab 62%.
2.Renewable Zog Sector: Nyob rau hauv photovoltaic fais fab chaw nres tsheb, inverters raws li 12-nti SiC substrates tsis tsuas yog feature me me daim ntawv tab sis kuj ua tau conversion efficiency tshaj 99%. Tshwj xeeb tshaj yog nyob rau hauv kev faib tiam scenarios, qhov kev ua tau zoo no txhais tau tias txhua xyoo kev txuag ntawm ntau pua txhiab yuan hauv hluav taws xob poob rau cov neeg ua haujlwm.
3.Industrial Automation: zaus converters siv 12-nti substrates ua tau zoo heev nyob rau hauv industrial robots, CNC tshuab cuab yeej, thiab lwm yam khoom. Lawv cov yam ntxwv hloov pauv siab ua kom lub cev muaj zog teb ceev los ntawm 30% thaum txo cov electromagnetic cuam tshuam rau ib feem peb ntawm cov kev daws teeb meem.
4.Consumer Electronics Innovation: Lwm tiam smartphones fast-charging technologies tau pib siv 12-nti SiC substrates. Nws tau kwv yees tias cov khoom siv ceev ceev tshaj 65W yuav hloov pauv mus rau cov kev daws teeb meem silicon carbide, nrog 12-nti substrates tshwm sim raws li qhov kev xaiv zoo tshaj plaws.

XKH Customized Services rau 12-nti SiC Substrate

Txhawm rau ua kom tau raws li cov cai tshwj xeeb rau 12-nti SiC substrates (12-nti silicon carbide substrates), XKH muaj kev pabcuam kev pabcuam:
1. Thickness Customization:
Peb muab 12-nti substrates nyob rau hauv ntau yam thickness specifications nrog rau 725μm kom tau raws li nyias daim ntawv thov.
2. Doping concentration:
Peb qhov kev tsim khoom txhawb nqa ntau yam kev coj ua xws li n-hom thiab p-hom substrates, nrog kev tswj xyuas qhov tseeb ntawm qhov ntau ntawm 0.01-0.02Ω·cm.
3.Testing Services:
Nrog ua tiav cov khoom ntsuas wafer-theem, peb muab cov ntaub ntawv soj ntsuam tag nrho.
XKH nkag siab tias txhua tus neeg siv khoom muaj qhov tshwj xeeb rau 12-nti SiC substrates. Yog li ntawd, peb muab cov qauv kev lag luam hloov pauv kev sib koom tes los muab cov kev daws teeb meem sib tw tshaj plaws, txawm tias rau:
· R & D qauv
· Kev tsim khoom ntim khoom
Peb cov kev pabcuam customized ua kom peb tuaj yeem ua tau raws li koj cov kev xav tau tshwj xeeb thiab kev tsim khoom rau 12-nti SiC substrates.