4 nti High purity Al2O3 99.999% Sapphire substrate wafer Dia101.6 × 0.65mmt nrog Primary Flat Ntev

4 nti High purity Al2O3 99.999% Sapphire substrate wafer Dia101.6 × 0.65mmt nrog Primary Flat Length Featured duab

Lus piav qhia luv luv:

Lub 4-nti (txog 101.6 hli) sapphire wafer yog ib lub wafer ua los ntawm cov khoom siv sapphire nrog txoj kab uas hla ntawm 4 ntiv tes.

Xa email rau peb

Product Detail

Khoom cim npe

Kev piav qhia

Cov lus qhia tshwj xeeb ntawm 4-nti sapphire wafers tau qhia raws li hauv qab no:

Thickness: Lub thickness ntawm sapphire wafers yog nruab nrab ntawm 0.2 hli thiab 2 hli, thiab cov thickness tshwj xeeb tuaj yeem kho raws li cov neeg siv khoom xav tau.

Placement Edge: Feem ntau yog ib feem me me ntawm ntug ntawm lub wafer hu ua "ntim qhov chaw" uas tiv thaiv lub wafer nto thiab ntug, thiab feem ntau yog amorphous.

Kev npaj deg: Feem ntau sapphire wafers yog mechanically hauv av thiab chemically mechanically polished kom du nto.

Surface Properties: Qhov saum npoo ntawm sapphire wafers feem ntau muaj cov khoom siv kho qhov muag zoo, xws li tsis tshua muaj kev cuam tshuam thiab qis refractive index, txhawm rau txhim kho kev ua haujlwm ntawm cov cuab yeej.

Daim ntawv thov

● Kev loj hlob substrate rau III-V thiab II-VI compounds

● Electronics thiab optoelectronics

● IR daim ntawv thov

● Silicon Ntawm Sapphire Integrated Circuit (SOS)

● Xov tooj cua Frequency Integrated Circuit (RFIC)

Specification

Yam khoom	4-nti C-plane (0001) 650μm Sapphire Wafers
Cov khoom siv Crystal	99,999%, High Purity, Monocrystalline Al2O3
Qib	Prime, Epi-Ready
Surface Orientation	C-plane (0001)
	C-dav hlau tawm-lub kaum sab xis mus rau M-axis 0.2 +/- 0.1 °
Txoj kab uas hla	100.0mm +/- 0.1 hli
Thickness	650 μm +/- 25 μm
Thawj Txoj Kev Ncaj Ncees	A-plane (11-20) +/- 0.2 °
Qhov Loj Loj Loj	30.0mm +/- 1.0 hli
Ib sab Polished	Pem hauv ntej nto	Epi-polished, Ra <0.2 nm (los ntawm AFM)
(SSP)	Back Surface	Cov av zoo, Ra = 0.8 μm rau 1.2 μm
Ob Chav Sab Polished	Pem hauv ntej nto	Epi-polished, Ra <0.2 nm (los ntawm AFM)
(DSP)	Back Surface	Epi-polished, Ra <0.2 nm (los ntawm AFM)
TTV	<20 μm
HUV	<20 μm
WARP	<20 μm
Ntxuav / ntim	Chav Kawm 100 ntxuav chav tu thiab lub tshuab nqus tsev,
	25 daim nyob rau hauv ib lub thawv ntim los yog ib lub thawv ntim.

Peb muaj ntau xyoo ntawm kev paub hauv kev lag luam sapphire. Xws li cov neeg muag khoom hauv Suav teb, nrog rau kev lag luam thoob ntiaj teb. Yog tias koj muaj kev xav tau, thov koj xav tiv tauj peb.