4inch Semi-insulting SiC wafers HPSI SiC substrate Prime Qhuav qib

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Lub 4-nti high-purity semi-insulated silicon carbide ob-sided polishing phaj yog tsuas yog siv nyob rau hauv 5G kev sib txuas lus thiab lwm yam teb, nrog rau qhov zoo ntawm kev txhim kho lub xov tooj cua zaus ntau, ultra-ntev deb paub, tiv thaiv kev cuam tshuam, high-speed , loj-muaj peev xwm kis tau tus mob cov ntaub ntawv thiab lwm yam kev siv, thiab yog suav tias yog lub zoo tagnrho substrate rau ua microwave hwj chim li.

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Silicon carbide (SiC) yog ib qho khoom siv semiconductor uas muaj cov ntsiab lus carbon thiab silicon, thiab yog ib qho ntawm cov khoom siv zoo tshaj plaws rau kev ua kom kub, siab zaus, siab zog thiab high-voltage li.Piv nrog rau cov khoom siv silicon tsoos (Si), qhov txwv tsis pub band dav ntawm silicon carbide yog peb npaug ntawm silicon;thermal conductivity yog 4-5 npaug ntawm silicon;qhov tawg voltage yog 8-10 npaug ntawm silicon;thiab cov electron saturation drift tus nqi yog 2-3 npaug ntawm silicon, uas ua tau raws li cov kev xav tau ntawm kev lag luam niaj hnub rau high-power, high-voltage, thiab high-frequency, thiab nws yog siv los ua high-speed, high- zaus, lub zog siab thiab lub teeb-emitting hluav taws xob cov khoom siv hluav taws xob, thiab nws cov ntawv thov hauv qab no suav nrog daim phiaj ntse, lub zog tshiab, lub zog hluav taws xob photovoltaic, 5G kev sib txuas lus, thiab lwm yam. coj mus muag siv.

Qhov zoo ntawm SiC wafers / SiC substrate

Kub kub kuj.Qhov txwv tsis pub band dav ntawm silicon carbide yog 2-3 npaug ntawm silicon, yog li cov hluav taws xob tsis tshua muaj siab dhia ntawm qhov kub thiab muaj peev xwm tiv taus kev ua haujlwm siab dua, thiab thermal conductivity ntawm silicon carbide yog 4-5 npaug ntawm silicon, ua nws yooj yim dua rau dissipate cua sov los ntawm lub cuab yeej thiab tso cai rau ib tug ntau dua limiting kev khiav hauj lwm kub.Cov yam ntxwv siab-kub tuaj yeem nce lub zog hluav taws xob, thaum txo cov kev cai rau cov kev ua kom sov, ua cov davhlau ya nyob thiab miniaturized ntau.

High voltage kuj.Silicon carbide lub zog tawg yog 10 npaug ntawm silicon, ua kom nws tiv taus cov hluav taws xob ntau dua, ua rau nws tsim nyog rau cov khoom siv hluav taws xob ntau.

High-frequency kuj.Silicon carbide muaj ob npaug ntawm qhov saturation electron drift tus nqi ntawm silicon, ua rau nws cov khoom siv hauv cov txheej txheem kaw tsis muaj nyob rau hauv qhov tshwm sim tam sim no, tuaj yeem txhim kho cov cuab yeej hloov zaus, kom ua tiav cov cuab yeej miniaturisation.

Tsawg zog poob.Silicon carbide muaj qhov ua haujlwm qis heev piv rau cov khoom siv silicon, tsis tshua muaj kev cuam tshuam;Nyob rau tib lub sij hawm, lub siab bandwidth ntawm silicon carbide ho txo cov leakage tam sim no, lub zog poob;Tsis tas li ntawd, cov khoom siv silicon carbide hauv cov txheej txheem kaw tsis muaj nyob rau hauv qhov tshwm sim tam sim no, tsis tshua muaj kev hloov pauv.