50.8mm 2inch GaN ntawm sapphire Epi-txheej wafer

Lus piav qhia luv luv:

Raws li cov khoom siv semiconductor tiam thib peb, gallium nitride muaj qhov zoo ntawm qhov kub thiab txias tsis kam, siab compatibility, siab thermal conductivity thiab dav band sib txawv. Raws li cov ntaub ntawv sib txawv, cov nplooj ntawv gallium nitride epitaxial tuaj yeem muab faib ua plaub pawg: gallium nitride raws li gallium nitride, silicon carbide raws li gallium nitride, sapphire raws li gallium nitride thiab silicon raws li gallium nitride. Silicon-raws li gallium nitride epitaxial daim ntawv yog cov khoom siv dav tshaj plaws nrog cov nqi tsim khoom qis thiab paub tab ntau lawm technology.

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Daim ntawv thov ntawm gallium nitride GaN epitaxial ntawv

Raws li kev ua haujlwm ntawm gallium nitride, gallium nitride epitaxial chips yog tsim rau lub zog siab, siab zaus, thiab kev siv hluav taws xob tsawg.

Nws yog reflected nyob rau hauv:

1) High bandgap: High bandgap txhim kho qib voltage ntawm gallium nitride cov cuab yeej thiab tuaj yeem tso tawm lub zog ntau dua li cov khoom siv gallium arsenide, uas yog tshwj xeeb tshaj yog haum rau 5G kev sib txuas lus hauv paus chaw nres tsheb, tub rog radar thiab lwm qhov chaw;

2) Kev hloov siab ua haujlwm siab: kev tiv thaiv ntawm gallium nitride hloov hluav taws xob hluav taws xob yog 3 qhov kev txiav txim siab qis dua li ntawm cov khoom siv silicon, uas tuaj yeem txo qhov poob ntawm kev hloov pauv;

3) Cov thermal conductivity: siab thermal conductivity ntawm gallium nitride ua rau nws muaj kev ua tau zoo ntawm cov cua kub dissipation, haum rau kev tsim cov khoom siv hluav taws xob, kub kub thiab lwm yam khoom siv;

4) Kev tawg hluav taws xob muaj zog: Txawm hais tias qhov tawg hluav taws xob hluav taws xob ntawm lub zog ntawm gallium nitride yog ze rau ntawm silicon nitride, vim yog cov txheej txheem semiconductor, cov khoom siv lattice mismatch thiab lwm yam, qhov voltage kam rau ntawm gallium nitride li feem ntau yog txog 1000V, thiab kev nyab xeeb siv voltage feem ntau yog qis dua 650V.

Yam khoom	GaN-TCU-C50	GaN-TCN-C50	GaN-TCP-C50
Qhov ntev	50.8mm ± 0.1mm
Thickness	4.5 ± 0.5 hli		4.5 ± 0.5 hli
Kev taw qhia	C-plane (0001) ± 0.5 °
Hom kev coj ua	N-hom (Undoped)	N-hom (Si-doped)	P-hom (Mg-doped)
Kev tiv thaiv (3O0K)	<0.5 Q-cm	<0.05 Q*cm	~ 10 Q.cm
Carrier Concentration	<5x10¹⁷cm^-3	> 1x10¹⁸cm^-3	> 6 x 1016 cm^-3
Mobility	~ 300 cm²/Vs	~ 200 cm²/Vs	~ 10 cm²/Vs
Dislocation Ceev	Tsawg dua 5x10⁸cm^-2(xws li FWHMs of XRD)
Substrate qauv	GaN ntawm Sapphire (Standard: SSP Option: DSP)
Siv tau qhov chaw	> 90%
Pob	Ntim rau hauv chav kawm 100 huv chav ib puag ncig, hauv cov ntawv ntim ntawm 25pcs lossis ib lub thawv wafer, nyob rau hauv ib qho chaw nitrogen.