100mm 4inch GaN ntawm Sapphire Epi-txheej wafer Gallium nitride epitaxial wafer

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Gallium nitride epitaxial daim ntawv yog ib tug neeg sawv cev ntawm peb tiam ntawm wide band gap semiconductor epitaxial cov ntaub ntawv, uas muaj zoo heev zog xws li dav band gap, siab breakdown teb zog, siab thermal conductivity, siab electron saturation drift ceev, muaj zog hluav taws xob tsis kam thiab siab. tshuaj stability.

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Product Detail

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Txoj kev loj hlob ntawm GaN xiav LED quantum zoo qauv.Cov txheej txheem nthuav dav yog raws li hauv qab no

(1) Kub kub ci, sapphire substrate yog thawj rhuab mus rau 1050 ℃ nyob rau hauv ib tug hydrogen cua, lub hom phiaj yog los ntxuav lub substrate nto;

(2) Thaum lub substrate kub poob mus rau 510 ℃, ib tug tsawg-kub GaN / AlN tsis txheej nrog ib tug tuab ntawm 30nm yog tso rau saum npoo ntawm sapphire substrate;

(3) Kub nce mus rau 10 ℃, cov tshuaj tiv thaiv roj ammonia, trimethylgallium thiab silane raug txhaj tshuaj, raws li kev tswj hwm tus nqi ntws, thiab cov silicon-doped N-hom GaN ntawm 4um thickness yog zus;

(4) Cov tshuaj tiv thaiv roj ntawm trimethyl aluminium thiab trimethyl gallium tau siv los npaj silicon-doped N-type A⒑ continents nrog lub thickness ntawm 0.15um;

(5) 50nm Zn-doped InGaN tau npaj los ntawm kev txhaj tshuaj trimethylgallium, trimethylindium, diethylzinc thiab ammonia ntawm qhov kub ntawm 8O0 ℃ thiab tswj cov nqi sib txawv raws li;

(6) Qhov kub thiab txias tau nce mus rau 1020 ℃, trimethylaluminum, trimethylgallium thiab bis (cyclopentadienyl) magnesium raug txhaj los npaj 0.15um Mg doped P-type AlGaN thiab 0.5um Mg doped P-hom G ntshav qabzib;

(7) Zoo siab P-hom GaN Sibuyan zaj duab xis tau los ntawm annealing hauv nitrogen cua ntawm 700 ℃;

(8) Etching ntawm P-hom G stasis nto kom nthuav tawm N-hom G stasis nto;

(9) Evaporation ntawm Ni/Au daim hlau tiv tauj ntawm p-GaNI nto, evaporation ntawm △/Al daim hlau tiv tauj ntawm ll-GaN nto los tsim cov electrodes.

Specifications

Yam khoom	GaN-TCU-C100	GaN-TCN-C100
Qhov ntev	100mm ± 0.1 hli
Thickness	4.5 ± 0.5um tuaj yeem kho tau
Kev taw qhia	C-plane (0001) ± 0.5 °
Hom kev coj ua	N-hom (Undoped)	N-hom (Si-doped)
Kev tiv thaiv (300K)	<0.5 Q-cm	<0.05 Q*cm
Carrier Concentration	<5x10¹⁷cm^-3	> 1x10¹⁸cm^-3
Mobility	~ 300 cm²/Vs	~ 200 cm²/Vs
Dislocation Ceev	Tsawg dua 5x10⁸cm^-2(xws li FWHMs of XRD)
Substrate qauv	GaN ntawm Sapphire (Standard: SSP Option: DSP)
Siv tau qhov chaw	> 90%
Pob	Ntim rau hauv chav kawm 100 huv chav ib puag ncig, hauv cov ntawv ntim ntawm 25pcs lossis ib lub thawv wafer, nyob rau hauv ib qho chaw nitrogen.