6 nti HPSI SiC substrate wafer Silicon Carbide Semi-insulting SiC wafers
PVT Silicon Carbide Crystal SiC Kev Loj Hlob Technology
Txoj kev loj hlob tam sim no rau SiC ib leeg siv lead ua feem ntau suav nrog peb yam hauv qab no: cov txheej txheem ua kua theem, kev kub siab tshuaj vapor deposition txoj kev, thiab lub cev vapor theem thauj (PVT) txoj kev. Ntawm lawv, PVT txoj kev yog cov kev tshawb fawb tshaj plaws thiab paub tab technology rau SiC ib leeg siv lead ua kev loj hlob, thiab nws cov kev nyuaj siab yog:
(1) SiC ib leeg siv lead ua nyob rau hauv qhov kub siab ntawm 2300 ° C saum lub kaw graphite chamber kom ua tiav "khoom - roj - khoom" kev hloov pauv recrystallisation txheej txheem, lub voj voog loj hlob ntev, tsis yooj yim rau kev tswj, thiab nquag microtubules, suav nrog thiab lwm yam tsis xws luag.
(2) Silicon carbide ib leeg siv lead ua, suav nrog ntau dua 200 hom siv lead ua sib txawv, tab sis kev tsim cov khoom siv tsuas yog ib hom siv lead ua, yooj yim los tsim cov khoom siv lead ua hloov pauv hauv cov txheej txheem kev loj hlob uas ua rau ntau hom kev suav nrog tsis xws luag, txheej txheem kev npaj ntawm ib leeg. hom siv lead ua tshwj xeeb yog qhov nyuaj los tswj kev ruaj ntseg ntawm cov txheej txheem, piv txwv li, tam sim no lub ntsiab ntawm 4H-hom.
(3) Silicon carbide ib leeg siv lead ua kev loj hlob thermal teb muaj qhov kub thiab txias, ua rau cov txheej txheem siv lead ua muaj kev ntxhov siab nyob hauv ib txwm muaj thiab qhov tshwm sim dislocations, faults thiab lwm yam tsis xws luag induced.
(4) Silicon carbide ib leeg siv lead ua txoj kev loj hlob yuav tsum nruj me ntsis tswj cov kev taw qhia ntawm sab nraud impurities, thiaj li kom tau ib tug heev purity semi-insulating siv lead ua los yog directionally doped conductive siv lead ua. Rau cov semi-insulating silicon carbide substrates siv nyob rau hauv RF cov khoom siv, cov khoom siv hluav taws xob yuav tsum tau ua tiav los ntawm kev tswj cov impurity tsawg heev thiab cov ntsiab lus tshwj xeeb ntawm cov khoom siv lead ua.