6 nti HPSI SiC substrate wafer Silicon Carbide Semi-insulting SiC wafers

Cov txheej txheem kev loj hlob tam sim no rau SiC ib leeg siv lead ua feem ntau suav nrog peb txoj hauv qab no: txoj kev ua kua theem, txoj kev tso pa tshuaj kub siab, thiab txoj kev thauj mus los ntawm lub cev (PVT). Ntawm lawv, txoj kev PVT yog cov thev naus laus zis tshawb fawb thiab paub tab tshaj plaws rau kev loj hlob ntawm SiC ib leeg siv lead ua, thiab nws cov teeb meem kev siv tshuab yog:

(1) SiC ib leeg siv lead ua ke hauv qhov kub siab ntawm 2300 ° C saum lub chamber graphite kaw kom ua tiav cov txheej txheem hloov pauv "khoom - roj - khoom" recrystallisation, lub voj voog loj hlob ntev, nyuaj rau tswj, thiab yooj yim rau microtubules, inclusions thiab lwm yam tsis zoo.

(2) Silicon carbide ib leeg siv lead ua ke, suav nrog ntau dua 200 hom siv lead ua ke sib txawv, tab sis kev tsim cov khoom siv lead ua ke tsuas yog ib hom siv lead ua ke xwb, yooj yim los tsim cov kev hloov pauv siv lead ua ke hauv cov txheej txheem loj hlob ua rau muaj ntau hom kev suav nrog qhov tsis zoo, cov txheej txheem npaj ntawm ib hom siv lead ua ke tshwj xeeb nyuaj rau tswj kev ruaj khov ntawm cov txheej txheem, piv txwv li, tam sim no cov khoom siv tseem ceeb ntawm 4H-hom.

(3) Silicon carbide ib leeg siv lead ua kom loj hlob thermal teb muaj qhov kub thiab txias gradient, ua rau cov txheej txheem loj hlob siv lead ua muaj kev ntxhov siab sab hauv thiab ua rau muaj kev cuam tshuam, qhov yuam kev thiab lwm yam tsis zoo.

(4) Cov txheej txheem loj hlob ntawm silicon carbide ib leeg siv lead ua ke yuav tsum tswj hwm qhov kev qhia tawm ntawm cov khoom tsis huv sab nraud, kom tau txais cov khoom siv semi-insulating purity siab heev lossis cov khoom siv conductive doped. Rau cov khoom siv semi-insulating silicon carbide siv hauv cov khoom siv RF, cov khoom siv hluav taws xob yuav tsum tau ua tiav los ntawm kev tswj hwm qhov concentration qis heev thiab cov hom teeb meem tshwj xeeb hauv cov siv lead ua ke.