8 nti SiC silicon carbide wafer 4H-N hom 0.5 hli ntau lawm qib kev tshawb fawb qib kev cai polished substrate
Cov yam ntxwv tseem ceeb ntawm 8-nti silicon carbide substrate 4H-N hom muaj xws li:
1. Microtubule ntom ntom: ≤ 0.1 / cm² lossis qis dua, xws li microtubule ntom ntom yog txo qis kom tsawg dua 0.05 / cm² hauv qee cov khoom.
2. Crystal daim ntawv piv: 4H-SiC siv lead ua daim ntawv piv mus txog 100%.
3. Resistivity: 0.014 ~ 0.028 Ω·cm, lossis ntau ruaj khov ntawm 0.015-0.025 Ω·cm.
4. Nto roughness: CMP Si Face Ra≤0.12nm.
5. Thickness: Feem ntau 500.0 ± 25μm lossis 350.0 ± 25μm.
6. Chamfering lub kaum ntse ntse: 25 ± 5 ° lossis 30 ± 5 ° rau A1 / A2 nyob ntawm qhov tuab.
7. Tag nrho cov dislocation ceev: ≤3000/cm².
8. Nto hlau paug: ≤1E + 11 atoms / cm².
9. Khoov thiab warpage: ≤ 20μm thiab ≤2μm, feem.
Cov yam ntxwv no ua rau 8-nti silicon carbide substrates muaj cov ntawv thov tseem ceeb hauv kev tsim cov khoom siv hluav taws xob kub, siab zaus, thiab cov khoom siv hluav taws xob siab.
8inch silicon carbide wafer muaj ntau daim ntawv thov.
1. Cov khoom siv fais fab: SiC wafers tau siv dav hauv kev tsim cov khoom siv hluav taws xob xws li fais fab MOSFETs (hlau-oxide-semiconductor field-effect transistors), Schottky diodes, thiab fais fab kev koom ua ke modules. Vim muaj cov thermal conductivity, siab tawg voltage, thiab siab electron txav ntawm SiC, cov khoom siv no tuaj yeem ua tau zoo, kev ua haujlwm siab hloov hluav taws xob hauv qhov kub thiab txias, high-voltage, thiab high-frequency ib puag ncig.
2. Cov khoom siv Optoelectronic: SiC wafers ua lub luag haujlwm tseem ceeb hauv cov khoom siv optoelectronic, siv los tsim cov khoom siv hluav taws xob, laser diodes, ultraviolet qhov chaw, thiab lwm yam. Silicon carbide qhov zoo tshaj plaws kho qhov muag thiab hluav taws xob ua rau nws cov khoom xaiv, tshwj xeeb tshaj yog nyob rau hauv daim ntawv thov uas yuav tsum tau kub kub, high zaus, thiab siab zog.
3. Xov tooj cua zaus (RF) Devices: SiC chips kuj yog siv los tsim cov khoom siv RF xws li RF fais fab amplifiers, high-frequency switches, RF sensors, thiab lwm yam. SiC lub siab thermal stability, cov yam ntxwv siab zaus, thiab kev poob qis ua rau nws zoo tagnrho rau kev siv RF xws li kev sib txuas lus wireless thiab radar systems.
4.High-temperature electronics: Vim lawv cov thermal stability thiab kub elasticity, SiC wafers yog siv los tsim cov khoom siv hluav taws xob tsim los ua haujlwm nyob rau hauv qhov kub thiab txias, xws li high-temperature fais fab electronics, sensors, thiab controllers.
Txoj hauv kev tseem ceeb ntawm 8-nti silicon carbide substrate 4H-N hom suav nrog kev tsim cov khoom siv hluav taws xob siab, siab zaus, thiab cov khoom siv hluav taws xob muaj zog, tshwj xeeb tshaj yog nyob rau hauv cov khoom siv hluav taws xob, hnub ci zog, cua tsim hluav taws xob, hluav taws xob. locomotives, servers, khoom siv hauv tsev, thiab hluav taws xob tsheb. Tsis tas li ntawd, cov khoom siv xws li SiC MOSFETs thiab Schottky diodes tau ua kom pom kev ua tau zoo hauv kev hloov zaus, kev sim luv luv, thiab kev siv inverter, tsav lawv siv hauv hluav taws xob hluav taws xob.
XKH tuaj yeem kho nrog cov thicknesses sib txawv raws li cov neeg siv khoom xav tau. Muaj qhov sib txawv roughness thiab polishing kev kho mob. Ntau hom doping (xws li nitrogen doping) tau txais kev txhawb nqa. XKH tuaj yeem muab kev txhawb nqa thiab kev pab tswv yim los xyuas kom meej tias cov neeg siv khoom tuaj yeem daws cov teeb meem hauv kev siv. Lub 8-nti silicon carbide substrate muaj qhov zoo ntawm cov nqi txo thiab nce peev xwm, uas tuaj yeem txo cov nqi ntawm cov nqi ntawm 50% piv rau 6-nti substrate. Tsis tas li ntawd, qhov nce ntxiv ntawm 8-nti substrate pab txo qis geometrical deviations thiab ntug warping thaum lub sij hawm machining, yog li txhim kho cov txiaj ntsig.
Daim duab qhia ntxaws
