LiTaO3 Lithium Tantalate Ingots nrog Fe / Mg Doping Customized 4inch 6inch 8inch rau Industrial Sensing

Lus piav qhia luv luv:

LiTaO3 Ingots (Lithium Tantalate Ingots), raws li cov ntaub ntawv tseem ceeb rau peb tiam dav-bandgap semiconductors thiab optoelectronics, leverage lawv kub Curie (607).° C), dav pob tshab (400–5,200 nm), zoo heev electromechanical coefficient (Kt²> 15%), thiab tsis tshua muaj dielectric poob (tanδ <2%) los hloov 5G kev sib txuas lus, quantum suav, thiab kev sib koom ua ke photonic. Los ntawm kev tsim cov thev naus laus zis xws li lub cev vapor thauj (PVT) thiab tshuaj vapor deposition (CVD), peb muab X / Y / Z-txiav, 42 ° Y-txiav, thiab ntu ntu (PPLT) ingots hauv 3-8-nti specifications, featuring micropipe ntom <0.1 cm⁻² thiab <5⁻² density Peb cov kev pabcuam suav nrog Fe/Mg doping, proton exchange waveguides, thiab silicon-based heterogeneous integration (POI), hais txog kev ua haujlwm siab kho qhov muag, quantum light sources, thiab infrared detectors. Cov khoom siv no ua rau muaj kev cuam tshuam hauv kev ua haujlwm me me, kev ua haujlwm siab, thiab thermal stability, ua rau kev hloov pauv hauv tsev thiab kev nce qib thev naus laus zis.

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Technical parameters

Specification	Cov pa	Siab Precision
Khoom siv	LiTaO3 (LT) / LiNbO3 wafers	LiTaO3 (LT)/LiNbO3 wafers
Kev taw qhia	X-112 ° Y, 36 ° Y, 42 ° Y ± 0.5 °	X-112 ° Y, 36 ° Y, 42 ° Y ± 0.5 °
Parallel	30 ″	10 ''
Perpendicular	10′	5'
nto zoo	40/20	20/10
Wavefront Distortion	L/4 @632nm	l/8 @632nm
Nto Flatness	L/4 @632nm	l/8 @632nm
Clear Aperture	> 90%	> 90%
Chamfer	<0.2 × 45 °	<0.2 × 45 °
Thickness/Diameter Tolerance	± 0.1 hli	± 0.1 hli
Qhov siab tshaj plaws	150 × 50mm	150 × 50mm

XKH Services

1. Loj-Scale Ingot Fabricationua

Loj thiab Txiav: 3-8-nti ingots nrog X / Y / Z-txiav, 42 ° Y-txiav, thiab kev cai angular txiav (± 0.01 ° kam rau ua).

Doping Control: Fe / Mg co-doping ntawm Czochralski txoj kev (concentration range 10¹⁶–10¹⁹ cm⁻³) kom optimize photorefractive kuj thiab thermal stability.

2. Cov txheej txheem Advanced Technologyua

Heterogeneous Integration: Silicon-based LiTaO3 composite wafers (POI) nrog tuab tswj (300-600 nm) thiab thermal conductivity txog 8.78 W / m·K rau high-frequency SAW lim.

Waveguide Fabrication: Proton exchange (PE) thiab thim rov qab proton pauv (RPE) cov tswv yim, ua tiav submicron waveguides (Δn> 0.7) rau high-speed electro-optic modulators (bandwidth> 40 GHz).

3. Kev Tswj Xyuas Zoo

End-to-End Testing: Raman spectroscopy (polytype verification), XRD (crystallinity), AFM (surface morphology), thiab optical uniformity testing (Δn <5 × 10⁻⁵).

4. Ntiaj teb no Supply Chain Support

Peev Xwm Ntau Lawm: Cov zis txhua hli> 5,000 ingots (8-nti: 70%), txhawb nqa 48-teev xwm txheej ceev.

Logistics Network: Kev them nyiaj hauv Tebchaws Europe, North America, thiab Asia-Pacific ntawm huab cua / hiav txwv freight nrog kub tswj ntim.

5. Kev Tsim Kho Kev Lag Luam

Kev Sib Koom R & D Labs: Sib koom ua ke ntawm photonic integration platforms (piv txwv li, SiO2 low-loss layer bonding).

Cov ntsiab lus

LiTaO3 Ingots ua haujlwm raws li cov khoom siv tswv yim reshaping optoelectronics thiab quantum technologies. Los ntawm kev tsim kho tshiab hauv kev loj hlob siv lead ua (piv txwv li, PVT), kev txo qis, thiab kev sib koom ua ke sib txawv (piv txwv li, POI), peb xa cov kev ntseeg siab, cov txiaj ntsig zoo rau 5G / 6G kev sib txuas lus, quantum suav, thiab kev lag luam IoT. XKH kev cog lus rau kev nce qib ingot tsis xws luag txo thiab scaling 8-nti ntau lawm kom cov neeg siv khoom nyob rau hauv lub ntiaj teb no mov chains, tsav lub sij hawm tom ntej ntawm wide-bandgap semiconductor ecosystems.