LiTaO3 Wafer 2inch-8inch 10x10x0.5mm 1sp 2sp rau 5G / 6G Kev Sib Txuas Lus

LiTaO3 Wafer 2inch-8inch 10x10x0.5 mm 1sp 2sp rau 5G / 6G Communications Featured duab

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LiTaO3 Wafer (lithium tantalate wafer), cov khoom siv tseem ceeb hauv tiam thib peb semiconductors thiab optoelectronics, leverages nws siab Curie kub (610 ° C), broad transparency range (0.4–5.0 μm), superior piezoelectric coefficient (d33> 1,500 pC / N), hloov pauv 5G kev sib txuas lus, kev sib koom ua ke photonic, thiab quantum li. Kev siv cov thev naus laus zis xws li kev thauj mus los ntawm lub cev (PVT) thiab tshuaj lom neeg vapor deposition (CVD), XKH muab X / Y / Z-txiav, 42 ° Y-txiav, thiab ntu ntu (PPLT) wafers hauv 2-8-nti hom, featuring nto roughness (Ra) <0.5m². Peb cov kev pabcuam suav nrog Fe doping, tshuaj txo qis, thiab Smart-Cut heterogeneous kev koom ua ke, hais txog kev ua haujlwm zoo ntawm cov ntxaij lim dej, cov khoom siv hluav taws xob, thiab cov khoom siv hluav taws xob quantum. Cov khoom siv no ua rau muaj kev cuam tshuam hauv kev ua haujlwm me me, kev ua haujlwm siab, thiab thermal stability, ua rau kev hloov pauv hauv tsev hauv cov thev naus laus zis tseem ceeb.

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Technical parameters

Lub npe	Optical-qib LiTaO3	Lub suab lus theem LiTaO3
Axial	Z txiav + / - 0.2 °	36 ° Y txiav / 42 ° Y txiav / X txiav (+ / - 0.2 °)
Txoj kab uas hla	76.2 hli + / - 0.3mm / 100 ± 0.2 hli	76.2mm + /-0.3mm 100mm + /-0.3mm 0r 150 ± 0.5mm
Datum dav hlau	22mm + / - 2mm	22mm + /-2mm 32mm + /-2mm
Thickness	500um + /-5mm 1000um + /-5mm	500um + /-20mm 350um + /-20mm
TTV	≤ 10 hli	≤ 10 hli
Curie kub	605 ° C + / - 0.7 ° C (DTAmethod)	605 ° C + / -3 ° C (DTAmethod
Nto zoo	Ob sab polishing	Ob sab polishing
Chamfered ntug	ntug rounding	ntug rounding

Cov yam ntxwv tseem ceeb

1.Electrical thiab Optical Performance
· Electro-Optic Coefficient: r33 ncav cuag 30 teev tsaus ntuj / V (X-txiav), 1.5 × siab dua LiNbO3, ua kom ultra-wideband electro-optic modulation (> 40 GHz bandwidth).
· Broad Spectral Response: Transmission range 0.4–5.0 μm (8 mm thickness), nrog ultraviolet absorption ntug tsawg li 280 nm, zoo tagnrho rau UV lasers thiab quantum dot li.
· Tsawg Pyroelectric Coefficient: dP / dT = 3.5 × 10⁻⁴ C / (m²·K), ua kom muaj kev ruaj ntseg nyob rau hauv high-temperature infrared sensors.

2.Thermal thiab Mechanical Properties
· High Thermal Conductivity: 4.6 W/m·K (X-txiav), plaub npaug ntawm quartz, txhawb nqa -200-500 ° C thermal cycling.
· Tsawg Thermal Expansion Coefficient: CTE = 4.1 × 10⁻⁶/K (25–1000 ° C), sib xws nrog silicon ntim kom txo cov thermal stress.
3.Kev Tswjhwm Zoo thiab Kev Ua Haujlwm Zoo
· Micropipe Density: <0.1 cm⁻² (8-nti wafers), dislocation ceev <500 cm⁻² (tsim los ntawm KOH etching).
· Nto Zoo: CMP-polished rau Ra <0.5 nm, ntsib EUV lithography-qib flatness yuav tsum.

Cov ntawv thov tseem ceeb

Domain	Daim ntawv thov Scenarios	Technical Advantages
Kev sib txuas lus kho qhov muag	100G / 400G DWDM lasers, silicon photonics hybrid modules	LiTaO3 wafer qhov dav spectral kis tau tus mob thiab tsis tshua muaj waveguide poob (α <0.1 dB / cm) pab C-band expansion.
5G / 6G Kev Sib Txuas Lus	SAW filters (1.8–3.5 GHz), BAW-SMR lim	42 ° Y-txiav wafers ua tiav Kt²> 15%, xa qis qis qis (<1.5 dB) thiab siab yob tawm (> 30 dB).
Quantum Technologies	Ib leeg-photon detectors, parametric down-conversion qhov chaw	High nonlinear coefficient (χ(2) = 40 pm / V) thiab qis tus lej suav qis (<100 suav / s) txhim kho quantum fidelity.
Industrial Sensing	High-temperature pressure sensors, tam sim no transformers	LiTaO3 wafer lub piezoelectric teb (g33> 20 mV / m) thiab siab kub siab (> 400 ° C) haum rau huab cua puag ncig.

XKH Services

1. Kev cai Wafer Fabrication

· Loj thiab Txiav: 2-8-nti wafers nrog X / Y / Z-txiav, 42 ° Y-txiav, thiab kev cai angular txiav (± 0.01 ° kam rau ua).

· Doping Control: Fe, Mg doping ntawm Czochralski txoj kev (concentration range 10¹⁶–10¹⁹ cm⁻³) kom optimize electro-optic coefficients thiab thermal stability.

2. Cov txheej txheem Advanced Technology
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· Periodic Poling (PPLT): Ntse-txiav tshuab rau LTOI wafers, ua tiav ± 10 nm domain lub sij hawm precision thiab quasi-phase-matched (QPM) zaus hloov dua siab tshiab.

· Heterogeneous Integration: Si-raws li LiTaO3 composite wafers (POI) nrog thickness tswj (300-600 nm) thiab thermal conductivity txog 8.78 W / m·K rau high-frequency SAW lim.

3.Quality Management Systems
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· Xaus-rau-End Testing: Raman spectroscopy (polytype pov thawj), XRD (crystallinity), AFM (surface morphology), thiab optical uniformity testing (Δn <5 × 10⁻⁵).

4.Global Supply Chain Support
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· Muaj Peev Xwm Ntau Lawm: Cov zis txhua hli> 5,000 wafers (8-nti: 70%), nrog 48-teev thaum muaj xwm txheej ceev.

· Logistics Network: Kev pab them nqi hauv Europe, North America, thiab Asia-Pacific ntawm huab cua / hiav txwv freight nrog kub tswj ntim.