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SiC Epitaxial Wafer rau Cov Khoom Siv Hluav Taws Xob - 4H-SiC, N-hom, Tsawg Tsis Txaus Siab

SiC Epitaxial Wafer rau Cov Khoom Siv Hluav Taws Xob - 4H-SiC, N-hom, Tsawg Tsis Txaus Ntsws Cov Duab Duab
  • SiC Epitaxial Wafer rau Cov Khoom Siv Hluav Taws Xob - 4H-SiC, N-hom, Tsawg Tsis Txaus Siab
  • SiC Epitaxial Wafer rau Cov Khoom Siv Hluav Taws Xob - 4H-SiC, N-hom, Tsawg Tsis Txaus Siab
  • SiC Epitaxial Wafer rau Cov Khoom Siv Hluav Taws Xob - 4H-SiC, N-hom, Tsawg Tsis Txaus Siab

Lus piav qhia luv luv:

SiC Epitaxial Wafer yog lub hauv paus ntawm cov khoom siv niaj hnub ua haujlwm siab, tshwj xeeb tshaj yog cov uas tsim los rau kev ua haujlwm siab, siab zaus, thiab kub ua haujlwm. Luv luv rau Silicon Carbide Epitaxial Wafer, SiC Epitaxial Wafer muaj cov khoom zoo, nyias SiC epitaxial txheej loj hlob nyob rau hauv ib qho loj SiC substrate. Kev siv SiC Epitaxial Wafer thev naus laus zis tau nthuav dav hauv cov tsheb hluav taws xob, cov phiajcim ntse, cov tshuab hluav taws xob tauj dua tshiab, thiab aerospace vim nws cov khoom siv hluav taws xob zoo tshaj plaws thiab cov khoom siv hluav taws xob piv rau cov pa roj silicon-based wafers.


Nta

Daim duab qhia ntxaws

SiC Epitaxial Wafer-4
SiC Epitaxial Wafer-6

Taw qhia

SiC Epitaxial Wafer yog lub hauv paus ntawm cov khoom siv niaj hnub ua haujlwm siab, tshwj xeeb tshaj yog cov uas tsim los rau kev ua haujlwm siab, siab zaus, thiab kub ua haujlwm. Luv luv rau Silicon Carbide Epitaxial Wafer, SiC Epitaxial Wafer muaj cov khoom zoo, nyias SiC epitaxial txheej loj hlob nyob rau hauv ib qho loj SiC substrate. Kev siv SiC Epitaxial Wafer thev naus laus zis tau nthuav dav hauv cov tsheb hluav taws xob, cov phiajcim ntse, cov tshuab hluav taws xob tauj dua tshiab, thiab aerospace vim nws cov khoom siv hluav taws xob zoo tshaj plaws thiab cov khoom siv hluav taws xob piv rau cov pa roj silicon-based wafers.

Fabrication Principles ntawm SiC Epitaxial Wafer

Tsim SiC Epitaxial Wafer yuav tsum muaj kev tswj xyuas cov tshuaj vapor deposition (CVD) heev. Cov txheej txheej epitaxial feem ntau yog cog rau ntawm monocrystalline SiC substrate siv cov pa roj xws li silane (SiH₄), propane (C₃H₈), thiab hydrogen (H₂) ntawm qhov kub siab tshaj 1500 ° C. Qhov kub-kub epitaxial loj hlob no ua kom ntseeg tau zoo crystalline kev sib raug zoo thiab qhov tsis xws luag ntawm cov txheej epitaxial thiab substrate.

Cov txheej txheem suav nrog ntau theem tseem ceeb:

  1. Kev npaj substrate: Lub hauv paus SiC wafer yog ntxuav thiab polished rau atomic smoothness.

  2. CVD Kev loj hlob: Nyob rau hauv high-purity reactor, gases react rau tso ib tug ib leeg-crystal SiC txheej ntawm lub substrate.

  3. Doping Control: N-hom lossis P-hom doping yog qhia thaum lub sijhawm epitaxy kom ua tiav cov khoom hluav taws xob xav tau.

  4. Kev soj ntsuam thiab Metrology: Optical microscopy, AFM, thiab X-ray diffraction yog siv los xyuas cov txheej thickness, doping concentration, thiab defect ntom.

Txhua SiC Epitaxial Wafer tau ua tib zoo saib xyuas kom muaj kev tiv thaiv nruj hauv thickness uniformity, nto flatness, thiab resistivity. Lub peev xwm los kho qhov tsis zoo no yog qhov tseem ceeb rau cov hluav taws xob siab MOSFETs, Schottky diodes, thiab lwm yam khoom siv hluav taws xob.

Specification

Parameter Specification
Pawg Cov Khoom Siv Science, Ib Leeg Crystal Substrates
Polytype 4H
Doping N Hom
Txoj kab uas hla 101 hli
Txoj kab uas hla Tolerance ± 5%
Thickness 0.35 hli
Thickness kam rau ua ± 5%
Qhov Loj Loj Loj 22 hli (± 10%)
TTV (Tag nrho Thickness Variation) ≤ 10 µm
Warp ≤ 25 µm
FWM ≤30 Arc-sec
Nto tiav Rq ≤ 0.35 nm

Daim ntawv thov ntawm SiC Epitaxial Wafer

SiC Epitaxial Wafer cov khoom lag luam yog qhov tseem ceeb hauv ntau qhov haujlwm:

  • Electric Vehicles (EVs): SiC Epitaxial Wafer-raws li cov cuab yeej ua kom lub zog ua haujlwm tau zoo thiab txo qhov hnyav.

  • Lub zog tauj dua tshiab: Siv nyob rau hauv inverters rau hnub ci thiab cua zog tshuab.

  • Cov Khoom Siv Hluav Taws Xob: Pab kom muaj kev sib hloov siab, siab kub hloov nrog kev poob qis.

  • Aerospace thiab Defense: Zoo tagnrho rau ib puag ncig hnyav uas yuav tsum tau muaj zog semiconductors.

  • 5G Base Chaw nres tsheb: SiC Epitaxial Wafer Cheebtsam txhawb zog siab dua rau kev siv RF.

SiC Epitaxial Wafer ua rau kev tsim qauv tsim, hloov pauv sai dua, thiab muaj zog dua hloov dua siab tshiab piv rau silicon wafers.

Qhov zoo ntawm SiC Epitaxial Wafer

SiC Epitaxial Wafer tshuab muab cov txiaj ntsig tseem ceeb:

  1. High Breakdown Voltage: Withstands voltages txog li 10 npaug siab dua Si wafers.

  2. Thermal conductivity: SiC Epitaxial Wafer dissipates cua sov sai dua, tso cai rau cov khoom siv kom txias dua thiab muaj kev ntseeg siab dua.

  3. High Switching Speeds: Kev hloov pauv qis qis ua kom muaj txiaj ntsig zoo dua thiab ua haujlwm me me.

  4. Wide Bandgap: Ua kom muaj kev ruaj ntseg ntawm qhov siab dua voltages thiab kub.

  5. Material Robustness: SiC yog chemically inert thiab mechanically muaj zog, zoo tagnrho rau kev thov.

Cov txiaj ntsig zoo no ua rau SiC Epitaxial Wafer cov khoom xaiv rau tiam tom ntej ntawm semiconductors.

FAQ: SiC Epitaxial Wafer

Q1: Qhov txawv ntawm SiC wafer thiab SiC Epitaxial Wafer yog dab tsi?
SiC wafer hais txog cov substrate ntau, thaum SiC Epitaxial Wafer suav nrog cov txheej txheem tshwj xeeb uas tau siv los ua khoom siv.

Q2: Dab tsi thicknesses muaj rau SiC Epitaxial Wafer txheej?
Epitaxial txheej feem ntau yog los ntawm ob peb micrometers mus rau ntau tshaj 100 μm, nyob ntawm seb yuav tsum tau thov.

Q3: Puas yog SiC Epitaxial Wafer haum rau qhov chaw kub kub?
Yog lawm, SiC Epitaxial Wafer tuaj yeem ua haujlwm hauv cov xwm txheej siab dua 600 ° C, ua haujlwm zoo dua silicon.

Q4: Vim li cas qhov tsis xws luag yog qhov tseem ceeb hauv SiC Epitaxial Wafer?
Tsawg qhov tsis xws luag txhim kho cov cuab yeej kev ua haujlwm thiab tawm los, tshwj xeeb tshaj yog rau cov ntawv siv hluav taws xob siab.

Q5: Puas yog N-hom thiab P-hom SiC Epitaxial Wafers muaj?
Yog lawm, ob qho tib si yog tsim los ntawm kev tswj hwm cov roj dopant thaum lub sijhawm ua haujlwm epitaxial.

Q6: Dab tsi wafer loj npaum li cas yog tus qauv rau SiC Epitaxial Wafer?
Standard diameters muaj xws li 2-nti, 4-nti, 6-nti, thiab nce 8-nti rau high-volume manufacturing.

Q7: SiC Epitaxial Wafer cuam tshuam tus nqi thiab kev ua haujlwm li cas?
Thaum pib kim dua silicon, SiC Epitaxial Wafer txo qhov loj thiab lub zog poob, txhim kho tag nrho cov nqi ua haujlwm ntev.

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