SiC silicon carbide wafer SiC wafer 4H-N 6H-N HPSI (High purity Semi-Insulating) 4H / 6H-P 3C -n hom 2 3 4 6 8inch muaj

Lus piav qhia luv luv:

Peb muab ntau hom kev xaiv zoo tshaj plaws SiC (Silicon Carbide) wafers, nrog rau kev tsom mus rau N-hom 4H-N thiab 6H-N wafers, uas yog qhov zoo tagnrho rau cov ntawv thov hauv cov khoom siv hluav taws xob siab, cov khoom siv hluav taws xob, thiab cov chaw kub kub. . Cov N-hom wafers paub txog lawv qhov tshwj xeeb thermal conductivity, kev ruaj ntseg hluav taws xob zoo, thiab kev ua haujlwm tau zoo, ua rau lawv zoo tshaj plaws rau kev ua haujlwm siab xws li hluav taws xob hluav taws xob, hluav taws xob tsav tsheb, hluav taws xob txuas ntxiv, thiab cov khoom siv hluav taws xob. Ntxiv rau peb cov N-hom muab, peb kuj muab P-hom 4H / 6H-P thiab 3C SiC wafers rau cov kev xav tau tshwj xeeb, suav nrog cov khoom siv siab thiab RF, nrog rau cov ntawv thov photonic. Peb cov wafers muaj nyob rau hauv qhov ntau thiab tsawg ntawm 2 ntiv mus rau 8 ntiv tes, thiab peb muab cov kev daws teeb meem kom tau raws li cov kev cai tshwj xeeb ntawm ntau yam kev lag luam. Yog xav paub ntxiv los yog nug, thov koj xav tiv tauj peb.


Product Detail

Khoom cim npe

Cov khoom

4H-N thiab 6H-N (N-hom SiC Wafers)

Daim ntawv thov:Feem ntau siv rau hauv hluav taws xob hluav taws xob, optoelectronics, thiab kev siv kub-kub.

Txoj kab uas hla:50.8mm txog 200mm.

Thickness:350 μm ± 25 μm, nrog kev xaiv thicknesses ntawm 500 μm ± 25 μm.

Kev tiv thaiv:N-hom 4H / 6H-P: ≤ 0.1 Ω·cm (Z-qib), ≤ 0.3 Ω·cm (P-qib); N-hom 3C-N: ≤ 0.8 mΩ·cm (Z-qib), ≤ 1 mΩ·cm (P-qib).

Roughness:Ra ≤ 0.2 nm (CMP lossis MP).

Micropipe Density (MPD):<1 ea/cm².

TTV: ≤ 10 μm rau txhua txoj kab uas hla.

Warp: ≤ 30 μm (≤ 45 μm rau 8-nti wafers).

Ntug Exclusion:3mm mus rau 6mm nyob ntawm seb hom wafer.

Ntim:Multi-wafer cassette los yog ib lub thawv wafer.

Ohter muaj qhov loj 3inch 4inch 6inch 8inch

HPSI (High Purity Semi-Insulating SiC Wafers)

Daim ntawv thov:Siv rau cov khoom siv uas xav tau kev ua haujlwm siab thiab ruaj khov, xws li RF cov khoom siv, cov ntawv thov photonic, thiab cov sensors.

Txoj kab uas hla:50.8mm txog 200mm.

Thickness:Standard thickness ntawm 350 μm ± 25 μm nrog rau kev xaiv rau thicker wafers mus txog 500 μm.

Roughness:Ra ≤ 0.2 nm.

Micropipe Density (MPD): ≤ 1 ea/cm².

Kev tiv thaiv:Kev ua haujlwm siab, feem ntau yog siv rau hauv daim ntaub ntawv semi-insulating.

Warp: ≤ 30 μm (rau qhov loj me), ≤ 45 μm rau qhov loj dua.

TTV: ≤ 10 μm.

Ohter muaj qhov loj 3inch 4inch 6inch 8inch

4 H-P,6 H-P&3C SiC wafer(P-hom SiC Wafers)

Daim ntawv thov:Feem ntau rau cov khoom siv hluav taws xob thiab cov khoom siv siab.

Txoj kab uas hla:50.8mm txog 200mm.

Thickness:350 μm ± 25 μm lossis customized xaiv.

Kev tiv thaiv:P-hom 4H / 6H-P: ≤ 0.1 Ω·cm (Z-qib), ≤ 0.3 Ω·cm (P-qib).

Roughness:Ra ≤ 0.2 nm (CMP lossis MP).

Micropipe Density (MPD):<1 ea/cm².

TTV: ≤ 10 μm.

Ntug Exclusion:3mm rau 6mm.

Warp: ≤ 30 μm rau qhov ntau thiab tsawg, ≤ 45 μm rau qhov ntau thiab tsawg.

Ohter muaj 3 nti 4 nti 6 nti5×5 10×10

Ib feem Cov Ntaub Ntawv Parameters Table

Khoom

2 nti

3 nti

4 nti

6 nti

8 nti

Hom

4H-N/HPSI/
6H-N/4H/6H-P/3C;

4H-N/HPSI/
6H-N/4H/6H-P/3C;

4H-N/HPSI//4H/6H-P/3C;

4H-N/HPSI//4H/6H-P/3C;

4H-N/HPSI/4H-SEMI

Txoj kab uas hla

50.8 ± 0.3 hli

76.2 ± 0.3 hli

100 ± 0.3 hli

150 ± 0.3 hli

200 ± 0.3 hli

Thickness

330 ± 25 hli

350 ± 25 hli

350 ± 25 hli

350 ± 25 hli

350 ± 25 hli

350 ± 25um;

500 ± 25 hli

500 ± 25 hli

500 ± 25 hli

500 ± 25 hli

los yog customized

los yog customized

los yog customized

los yog customized

los yog customized

Roughness

Ra ≤ 0.2nm

Ra ≤ 0.2nm

Ra ≤ 0.2nm

Ra ≤ 0.2nm

Ra ≤ 0.2nm

Warp

≤ 30 hli

≤ 30 hli

≤ 30 hli

≤ 30 hli

≤ 45 hli

TTV

≤ 10 hli

≤ 10 hli

≤ 10 hli

≤ 10 hli

≤ 10 hli

Scratch/Dig

CMP / MP

MPD

<1ea/cm-2

<1ea/cm-2

<1ea/cm-2

<1ea/cm-2

<1ea/cm-2

Cov duab

Round, Pav ca 16 hli; 22 hli ntev; NTAWM Length 30/32.5mm; NTAWM Length 47.5mm; TSIS TAU; TSIS TAU;

Bevel

45 °, SEMI Spec; C Zoo

 Qib

Qib ntau lawm rau MOS&SBD; Qib tshawb fawb; Qib Dummy, Noob wafer Qib

Lus hais

Txoj kab uas hla, Thickness, Orientation, specifications saum toj no tuaj yeem kho raws li koj qhov kev thov

 

Daim ntawv thov

·Fais fab Electronics

N hom SiC wafers yog qhov tseem ceeb hauv cov khoom siv hluav taws xob hluav taws xob vim tias lawv muaj peev xwm tswj tau qhov hluav taws xob siab thiab siab tam sim no. Lawv feem ntau siv nyob rau hauv lub hwj chim converters, inverters, thiab lub cev muaj zog tsav rau kev lag luam xws li tauj dua tshiab zog, hluav taws xob tsheb, thiab industrial automation.

· Optoelectronics
N hom SiC cov ntaub ntawv, tshwj xeeb tshaj yog rau kev siv optoelectronic, yog ua hauj lwm hauv cov khoom siv xws li lub teeb-emitting diodes (LEDs) thiab laser diodes. Lawv cov thermal conductivity thiab dav bandgap ua rau lawv zoo tagnrho rau cov khoom siv optoelectronic.

·Kev Siv Kub Kub
4H-N 6H-N SiC wafers zoo haum rau qhov kub thiab txias ib puag ncig, xws li hauv cov sensors thiab cov khoom siv hluav taws xob siv hauv aerospace, tsheb, thiab kev lag luam kev lag luam uas kub dissipation thiab stability ntawm qhov kub siab yog qhov tseem ceeb.

·RF Devices
4H-N 6H-N SiC wafers yog siv nyob rau hauv xov tooj cua zaus (RF) li uas ua hauj lwm nyob rau hauv high-frequency ranges. Lawv siv nyob rau hauv kev sib txuas lus systems, radar technology, thiab satellite kev sib txuas lus, qhov twg muaj zog efficiency thiab kev ua tau zoo yuav tsum tau.

·Cov ntawv thov Photonic
Hauv photonics, SiC wafers yog siv rau cov khoom siv xws li photodetectors thiab modulators. Cov khoom siv tshwj xeeb tso cai rau nws ua haujlwm zoo hauv lub teeb tsim, kev hloov kho, thiab kev tshawb pom hauv kev sib txuas lus kho qhov muag thiab cov khoom siv duab.

·Sensors
SiC wafers siv ntau yam kev siv sensor, tshwj xeeb tshaj yog nyob rau hauv ib puag ncig hnyav uas lwm cov ntaub ntawv yuav ua tsis tau. Cov no suav nrog ntsuas kub, siab, thiab tshuaj lom neeg ntsuas, uas yog qhov tseem ceeb hauv thaj chaw xws li tsheb, roj & roj, thiab kev saib xyuas ib puag ncig.

·Electric Tsheb Tsav Systems
SiC thev naus laus zis ua lub luag haujlwm tseem ceeb hauv tsheb hluav taws xob los ntawm kev txhim kho kev ua haujlwm thiab kev ua haujlwm ntawm cov tshuab tsav. Nrog SiC lub zog semiconductors, lub tsheb hluav taws xob tuaj yeem ua tiav lub roj teeb zoo dua, lub sijhawm them sai dua, thiab kev siv zog ntau dua.

·Advanced Sensors thiab Photonic Converters
Hauv cov thev naus laus zis thev naus laus zis, SiC wafers tau siv los tsim cov khoom siv siab tshaj plaws rau kev siv hauv cov neeg hlau, cov cuab yeej kho mob, thiab kev saib xyuas ib puag ncig. Hauv kev hloov pauv photonic, SiC cov khoom siv tau siv los ua kom muaj txiaj ntsig ntawm kev hloov hluav taws xob hluav taws xob rau cov teeb liab kho qhov muag, uas yog qhov tseem ceeb hauv kev sib txuas lus thiab kev siv internet ceev ceev.

Q&A

Q4H hauv 4H SiC yog dab tsi?
A: "4H" hauv 4H SiC yog hais txog cov qauv siv lead ua ntawm silicon carbide, tshwj xeeb yog daim ntawv hexagonal nrog plaub txheej (H). Tus "H" qhia txog hom hexagonal polytype, nws txawv ntawm lwm yam SiC polytypes xws li 6H lossis 3C.

Q4H-SiC thermal conductivity yog dab tsi?
A: Lub thermal conductivity ntawm 4H-SiC (Silicon Carbide) yog kwv yees li 490-500 W / m·K ntawm chav tsev kub. Qhov siab thermal conductivity no ua rau nws zoo tagnrho rau cov ntawv thov hauv hluav taws xob hluav taws xob thiab qhov chaw kub kub, qhov kev ua kom sov tau zoo yog qhov tseem ceeb.


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