Silicon carbide pob zeb diamond hlau txiav tshuab 4/6/8/12 nti SiC ingot ua

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Silicon carbide Pob zeb diamond hlau txiav tshuab yog ib yam khoom siv ua haujlwm siab rau silicon carbide (SiC) ingot hlais, siv pob zeb diamond hlau pom tshuab, los ntawm kev kub ceev txav pob zeb diamond hlau (kab txoj kab uas hla 0.1 ~ 0.3mm) rau SiC ingot multi-wire txiav, kom ua tiav high-precision, tsis tshua muaj kev puas tsuaj wafer npaj. Cov cuab yeej siv dav siv hauv SiC fais fab semiconductor (MOSFET / SBD), xov tooj cua zaus ntaus ntawv (GaN-on-SiC) thiab optoelectronic ntaus ntawv substrate ua, yog cov cuab yeej tseem ceeb hauv SiC kev lag luam saw.

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Txoj haujlwm ua haujlwm:

1. Ingot fixation: SiC ingot (4H / 6H-SiC) yog tsau rau ntawm lub platform txiav los ntawm lub fixture los xyuas kom meej txoj hauj lwm raug (± 0.02mm).

2. Pob zeb diamond kab txav: pob zeb diamond kab (electroplated pob zeb diamond hais nyob rau saum npoo) yog tsav los ntawm cov kev taw qhia log system rau high-ceev ncig (kab ceev 10 ~ 30m / s).

3. Txiav pub: lub ingot yog pub raws li kev taw qhia, thiab cov pob zeb diamond kab yog txiav ib txhij nrog ntau cov kab sib txuas (100 ~ 500 kab) los tsim ntau yam wafers.

4. Txias thiab nti tshem tawm: Txau cov dej txias (deionized dej + additives) nyob rau hauv qhov chaw txiav kom txo cov cua sov puas thiab tshem tawm cov chips.

Cov ntsiab lus tseem ceeb:

1. Txiav ceev: 0.2 ~ 1.0mm / min (nyob ntawm seb cov khoom siv lead ua thiab thickness ntawm SiC).

2. Kab nro: 20 ~ 50N (siab heev yooj yim rau kev tawg kab, tsawg heev cuam tshuam rau txiav raug).

3.wafer thickness: txheem 350 ~ 500μm, wafer tuaj yeem ncav cuag 100μm.

Cov yam ntxwv tseem ceeb:

(1) Txiav raug
Thickness kam rau ua: ± 5μm (@350μm wafer), zoo dua li cov pa mortar txiav (± 20μm).

Deg roughness: Ra <0.5μm (tsis muaj kev sib tsoo ntxiv kom txo tau cov kev ua haujlwm tom ntej).

Warpage: <10μm (txo qhov nyuaj ntawm polishing tom ntej).

(2) Kev ua haujlwm zoo
Multi-line txiav: txiav 100 ~ 500 daim ntawm ib zaug, ua kom muaj peev xwm ntau lawm 3 ~ 5 zaug (vs. Ib kab txiav).

Kab lub neej: Cov kab pob zeb diamond tuaj yeem txiav 100 ~ 300km SiC (nyob ntawm qhov tawv tawv thiab kev ua kom zoo dua).

(3) Kev puas tsuaj tsawg
Ntug tawg: <15μm (ib txwm txiav> 50μm), txhim kho wafer tawm los.

Subsurface puas txheej: <5μm (txo polishing tshem tawm).

(4) Kev tiv thaiv ib puag ncig thiab kev lag luam
Tsis muaj kab mob mortar: Txo cov nqi pov tseg cov kua pov tseg piv rau cov tshuaj khib nyiab.

Kev siv cov khoom siv: Txiav poob <100μm / cutter, txuag SiC raw khoom.

Txiav nyhuv:

1. Wafer zoo: tsis muaj macroscopic tawg ntawm qhov chaw, ob peb microscopic defects (controlable dislocation extension). Tau ncaj qha nkag mus rau qhov ntxhib polishing txuas, ua kom cov txheej txheem ntws.

2. Consistency: lub thickness sib txawv ntawm lub wafer nyob rau hauv lub batch yog <± 3%, haum rau automated ntau lawm.

3.Applicability: Txhawb 4H / 6H-SiC ingot txiav, sib xws nrog conductive / semi-insulated hom.

Technical specification:

Specification	Paub meej
Qhov Loj (L × W × H)	2500x2300x2500 lossis customize
Ua cov khoom loj ntau yam	4, 6, 8, 10, 12 nti ntawm silicon carbide
Nto roughness	Ra≤0.3u
Nruab nrab txiav ceev	0.3mm / min
Qhov hnyav	5,5t :ua
Txiav txheej txheem teeb tsa cov kauj ruam	≤30 kauj ruam
Khoom siv suab nrov	≤80dB
Hlau hlau tension	0 ~ 110N (0.25 hlau nro yog 45N)
Hlau hlau ceev	0 ~ 30m / S
Tag nrho lub zog	50 kwv
Pob zeb diamond hlau diam	≥0.18mm
Kawg flatness	≤0.05 hli
Txiav thiab tawg tus nqi	≤1% (tshwj tsis yog rau tib neeg vim li cas, cov khoom siv silicon, kab, txij nkawm thiab lwm yam laj thawj)

XKH Services:

XKH muab tag nrho cov txheej txheem kev pabcuam ntawm silicon carbide pob zeb diamond hlau txiav tshuab, suav nrog kev xaiv cov khoom siv (xaim txoj kab uas hla / xaim nrawm sib piv), kev txhim kho txheej txheem (txiav tsis zoo), cov khoom siv (pob zeb diamond hlau, phau ntawv qhia log) thiab kev txhawb nqa tom qab muag (cov cuab yeej tu, txiav kev soj ntsuam zoo), los pab cov neeg siv khoom tau txais txiaj ntsig siab (> 95%), tus nqi qis SiC wafer pawg ntau lawm. Nws kuj tseem muaj kev hloov kho tshiab (xws li kev txiav ultra-nyias, automated loading thiab unloading) nrog rau lub sij hawm 4-8 lub lis piam.