150mm 200mm 6inch 8inch GaN ntawm Silicon Epi-txheej wafer Gallium nitride epitaxial wafer

Lus piav qhia luv luv:

6-nti GaN Epi-txheej wafer yog cov khoom siv hluav taws xob zoo tshaj plaws uas muaj cov txheej txheem ntawm gallium nitride (GaN) zus ntawm silicon substrate.Cov khoom siv tau zoo heev hauv hluav taws xob thauj khoom thiab yog qhov zoo tagnrho rau kev tsim cov khoom siv hluav taws xob thiab cov khoom siv hluav taws xob siab.

Xa email rau peb

Product Detail

Khoom cim npe

Txoj kev tsim khoom

Cov txheej txheem tsim khoom suav nrog kev loj hlob GaN txheej ntawm sapphire substrate siv cov txheej txheem siab heev xws li hlau-organic chemical vapor deposition (MOCVD) lossis molecular beam epitaxy (MBE).Cov txheej txheem deposition yog ua raws li kev tswj xyuas kom ntseeg tau tias cov khoom siv lead ua zoo thiab cov yeeb yaj kiab zoo ib yam.

6inch GaN-On-Sapphire daim ntaub ntawv: 6-nti sapphire substrate chips yog dav siv nyob rau hauv microwave kev sib txuas lus, radar systems, wireless technology thiab optoelectronics.

Qee cov ntawv thov siv xws li

1. Rf fais fab amplifier

2. LED teeb pom kev lag luam

3. Cov khoom siv sib txuas lus wireless

4. Cov khoom siv hluav taws xob hauv qhov kub thiab txias

5. Cov khoom siv Optoelectronic

Khoom specifications

- Loj: Lub substrate txoj kab uas hla yog 6 ntiv tes (li 150 mm).

- Nto zoo: Qhov saum npoo tau zoo polished los muab daim iav zoo heev.

- Thickness: Lub thickness ntawm GaN txheej tuaj yeem kho raws li cov kev xav tau tshwj xeeb.

- Ntim: Lub substrate yog ua tib zoo ntim nrog cov ntaub ntawv los tiv thaiv zoo li qub los tiv thaiv kev puas tsuaj thaum thauj.

- Cov npoo ntawm qhov chaw: Lub substrate muaj cov npoo tshwj xeeb uas ua kom yooj yim sib dhos thiab ua haujlwm thaum npaj khoom.

- Lwm yam tsis muaj: Cov kev txwv tshwj xeeb xws li thinness, resistivity thiab doping concentration tuaj yeem hloov kho raws li cov neeg siv khoom xav tau.

Nrog rau lawv cov khoom zoo tshaj plaws thiab ntau yam kev siv, 6-nti sapphire substrate wafers yog ib qho kev xaiv txhim khu kev qha rau kev txhim kho cov khoom siv hluav taws xob zoo hauv ntau yam lag luam.

Substrate	6" 1mm <111> p-type Si	6" 1mm <111> p-type Si
Epi ThickAvg	~ 5 awm	~ 7 awm
Epi ThickUnif	<2%	<2%
Hneev	+/- 45 awm	+/- 45 awm
Kev tawg	<5 hli	<5 hli
Vertical BV	> 1000V	> 1400V
HEMT Al%	25-35%	25-35%
HEMT ThickAvg	20-30 nm	20-30 nm
Insitu SiN Cap	5-60 nm	5-60 nm
2 DEG conc.	~ 10¹³cm^-2	~ 10¹³cm^-2
Mobility	~ 2000 cm²/Vs (<2%)	~ 2000 cm²/Vs (<2%)
Rsh	<330ohm/sq (2%)	<330ohm/sq (2%)