200mm 8inch GaN ntawm sapphire Epi-txheej wafer substrate

Lus piav qhia luv luv:

Cov txheej txheem tsim khoom suav nrog kev loj hlob ntawm epitaxial ntawm GaN txheej ntawm Sapphire substrate siv cov txheej txheem siab heev xws li hlau-organic chemical vapor deposition (MOCVD) lossis molecular beam epitaxy (MBE). Lub deposition yog nqa tawm nyob rau hauv kev tswj tej yam kev mob kom ntseeg tau siab siv lead ua zoo thiab zaj duab xis uniformity.

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Product Detail

Khoom cim npe

Khoom taw qhia

8-nti GaN-on-Sapphire substrate yog cov khoom siv hluav taws xob zoo tshaj plaws uas tsim los ntawm Gallium Nitride (GaN) txheej grownon a Sapphire substrate. Cov khoom siv no muaj cov khoom siv hluav taws xob zoo heev thiab zoo tagnrho rau kev tsim cov khoom siv hluav taws xob thiab cov khoom siv hluav taws xob ntau zaus.

Txoj kev tsim khoom

Daim ntawv thov

Lub 8-nti GaN-on-Sapphire substrate pom kev siv dav hauv ntau yam xws li kev sib txuas lus hauv microwave, radarsystems, wireless technology, thiab optoelectronics. Qee qhov kev siv ntau tshaj suav nrog:

1. RF fais fab amplifiers

2. LED teeb pom kev lag luam

3. Cov khoom siv sib txuas lus wireless

4. Cov khoom siv hluav taws xob rau qhov chaw kub kub

5. Ocov khoom siv ptoelectronic

Khoom Specifications

-Dimension: Lub substrate loj yog 8 nti (200 mm) inch.

- Nto Zoo: Qhov saum npoo yog polished mus rau qib siab ntawm smoothness thiab nthuav tawm cov iav zoo li zoo.

- Thickness: GaN txheej thickness tuaj yeem kho raws li cov kev xav tau tshwj xeeb.

- Ntim: Lub substrate yog ua tib zoo ntim rau hauv cov ntaub ntawv los tiv thaiv zoo li qub los tiv thaiv kev puas tsuaj thaum lub sijhawm thauj mus los.

- Orientation Flat: Lub substrate muaj ib qho kev taw qhia ncaj nraim los pab hauv kev sib tw wafer thiab tuav thaum lub sij hawm tsim khoom siv.

- Lwm yam tsis muaj: Qhov tshwj xeeb ntawm cov thickness, resistivity, thiab dopant concentration tuaj yeem ua raws li cov neeg siv khoom xav tau.

Nrog nws cov khoom zoo tshaj plaws thiab ntau yam kev siv, 8-nti GaN-on-Sapphire substrate yog ib qho kev xaiv txhim khu kev qha rau kev txhim kho cov khoom siv hluav taws xob zoo hauv ntau yam lag luam.

Tsuas yog GaN-On-Sapphire, peb kuj tuaj yeem muab rau hauv daim ntawv thov khoom siv hluav taws xob, tsev neeg cov khoom suav nrog 8-nti AlGaN / GaN-on-Si epitaxial wafers thiab 8-nti P-cap AlGaN / GaN-on-Si epitaxial wafers. Nyob rau tib lub sijhawm, peb tau tsim kho tshiab ntawm nws tus kheej 8-nti GaN epitaxy thev naus laus zis hauv microwave teb, thiab tsim 8-nti AlGaN / GAN-on-HR Si epitaxy wafer uas sib xyaw ua haujlwm siab nrog qhov loj me, tus nqi qis. thiab sib xws nrog tus qauv 8-nti ntaus ntawv ua. Ntxiv rau silicon-based gallium nitride, peb kuj muaj cov khoom lag luam ntawm AlGaN / GaN-on-SiC epitaxial wafers kom tau raws li cov neeg siv khoom xav tau rau cov khoom siv silicon-based gallium nitride epitaxial.